Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP COLOR: BLACK SHIELDING: BRASS TIN PLATED CONTACT: PHOSPHOR BRONZE CONTACT TYPE: STAMPED LEVEL: 3 AS PER CECC 75 301-802 ENVIRONNEMENTAL OPERATING TEMPERATURE: -25 TO 85°C FLAMABILITY RAING: UL94-V0
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UL94-V0
500VAC,
300VAC
05-OCT-07
11-OCT-06
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NTE3303
Abstract: No abstract text available
Text: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified
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NTE3303
NTE3303
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Untitled
Abstract: No abstract text available
Text: 9R28064 Flat - Rainbow 9R280XX Series For more information please call 1-800-Belden1 See Put-ups and Colors Description: Belden's .050" pitch, color-coded PVC flat cable allows for quick identification and circuit tracing, along with easy breakouts for circuit
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9R28064
9R280XX
1-800-Belden1
73/23/EEC)
93/68/EEC.
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids
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TIM1414-15-252
145mA
2-11C1B)
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947-75
Abstract: No abstract text available
Text: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm
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JS9P08-AS
-800faA
947-75
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance
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140gr
Minu00
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CK408
Abstract: CK-408
Text: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage
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4480DY
CK408
CK-408
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2SK1725
Abstract: No abstract text available
Text: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage
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2SK1725
Vpp-15V
41093TH
A8-7832
2SK1725
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SMP25N05-45L
Abstract: No abstract text available
Text: Tem ic SMP25N05-45L Siliconix N-Chaniiel Enhancement-Mode Transistor, Logic Level 175 °C Maximum Junction Temperature Product Summary Jd IA 0.045 @ V qs = 10 V 25 0.060 @ VGS = 4.25 V 25 50 D O TO-220AB o .►JE D rain C o n n e c ted to Tab G D S Top View
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SMP25N05-45L
O-220AB
P-36850--
SMP25N05-45L
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Untitled
Abstract: No abstract text available
Text: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss
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2SK1472
VD0-30V
71993TH
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ lltron PRODUCT DEVICES.INC. 1000V, 4 .4A, 4 .0 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D ra in - S o u rc e Vo 1t . 1 D rain-G ate Voltage (RGS-1.0Mo ) (1) Gate-Source V oltage Con t inuous D rain Current Continuous (Tc = 25* C) D ra in C u rre n t P u ls e d ( 3 )
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SDF4NA100
11age
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AX8896
Abstract: No abstract text available
Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage
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2SJ287
250mm2X
250mA
----10V
32593TH
AX-8896
AX8896
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PDF
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7842
Abstract: No abstract text available
Text: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage
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2SK1727
400mA
400mA,
800mA,
41093TH
A8-7842
7842
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PDF
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23marking
Abstract: No abstract text available
Text: GaAs N CHANNEL DUAL GATE MES TYPE 3SK274 U n it in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1 1 0. 1 MAXIMUM RATINGS Ta = 25°C 1. 2 5 ± 0 - 1 CHARACTERISTIC G atel-D rain Voltage SYMBOL RATING VG1D0 -9 V G ate2-D rain Voltage VG2D0 -9 V G atel-Source Voltage
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3SK274
100//A
800MHz
23marking
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2092A
Abstract: No abstract text available
Text: 20 83A LD L o w D rive S eries V Dss = 6 0 V 2092A P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s •Low ON resistance ■Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage
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42893TH/N1292MH
2SJ191
2092A
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0545l
Abstract: d25n
Text: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary rusfw i 50 «& •< « 0.045 25 TO-251 TO-252 o o in r G D D rain C o n n ected to la b S Top View Ci O rd e r N um ber:
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SMD/SMU25N05-45L
O-251
O-252
05-45L
P-37394--
0545l
d25n
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8897
Abstract: No abstract text available
Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage
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2SJ288
10//S,
250mm2X
VQD--30V
250mA,
--500mA,
31893TH
AX-8897
8897
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PDF
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Untitled
Abstract: No abstract text available
Text: PROFESSIONAL QUALITY, HIGH DENSITY SUBMINIATURE-D CONNECTORS WIN-DD Series FOR INDOOR/OUTDOOR NONHAZARDOUS ENVIRONMENTAL APPLICATIONS WHERE PROTECTION FROM DUST, RAIN, HOSE DIRECTED WATER AND LIMITED WATER IMMERSION IS REQUIRED C O N T A C T V A R IA N T S
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T005336
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2SJ284
Abstract: marking am
Text: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage
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EN4220
2SJ284
10/ms,
NS4220-3/3
marking am
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PDF
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voltage stabiliser
Abstract: 7475 pin of 7475 neon stabiliser
Text: 7475 STABILISING TU B E Neon-filled voltage stabiliser. OPERATING CONDITIONS V ignition max V burning I qulsQcant I max I rain A.C. resistance 140 90-110 4 8 1 300 r V mA mA mA ohms DIMESSIOKS taniTjantlT OF KLECTHOBBS AID BASE CO8MECTI0I3 BRITISH 4-PIB BASE
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1.2 Micron CMOS Process Family
Abstract: CMOS GATE ARRAYs
Text: High Reliability Fast CMOS Gate Arrays U N IV E R S A L S E M IC O N D U C T O R INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable
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Untitled
Abstract: No abstract text available
Text: FULL SPECTRUM RAINBOW LEDs Liglt R T M T1% 5mm , T3 (8mm) LOW DOME ABSOLUTE MAX. RATINGS Ta=25*C COLOR Pd mW Up mA If mA Vr V If mA typ 5mm RAINBOW (RGB) LOW [)OM E LED CLEEAR D IS -1 0 2 4 -0 0 2 NOTE 2 CLEAR D IS -1 0 2 4 -1 0 2 NOTE 2 DIFFUSED D IS -1 0 2 4 -0 0 3
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280COMMENDED
5U237Q5
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PDF
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5mm rainbow led
Abstract: No abstract text available
Text: L ig n ’ li t e ; j FULL SPECTRUM RAINBOW LEDs T1 % 5mm , NEW 6 TERMINAL LED LEDTRONICS PART NO. LENS COLOR Actual Size ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C ABSOLUTE MAX. RATINGS Ta=25'C L.E.D. COLOR Pd mW lfP mA If mA Vr V If mA ty p Iv mcd Vf VIEW IrMAX \ p
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S42370S
5mm rainbow led
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0
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TIM1414-7-252
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PDF
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