Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RAM 8KX8 Search Results

    RAM 8KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HM1-65642B/883 Renesas Electronics Corporation 8kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    HM1-65642/883 Renesas Electronics Corporation 8kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    HM1-65642-9 Renesas Electronics Corporation 8kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy

    RAM 8KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M4Z32-BROOSH1

    Abstract: M4Z28-BROOSH1 SOH28 m48t35 M4T28-BR12SH1 Zeropower M40SZ100 M40SZ100W M40Z111 M40Z300W
    Text: Non-volatile RAM and RTC Selection guide High density surface mount solutions 32Mb NVRAM LPS LPS LPS LPS 16Mb with parallel RTC RAM RAM LPS RAM T212 RAM RAM LPS RAM 2x 8Mb LPSRAMs M48T212 M40Z300 “Hatless” 4x 8Mb LPSRAMs Mix and match ST SUPERVISORs, LPSRAMs and SNAPHAT tops for a surface mount


    Original     		PDF M48T212 M40Z300 M41ST85 M41ST95 SGNVRAM/0603 M4Z32-BROOSH1 M4Z28-BROOSH1 SOH28 m48t35 M4T28-BR12SH1 Zeropower M40SZ100 M40SZ100W M40Z111 M40Z300W

    FM25V10 I2C programming example

    Abstract: FM25L04 FM25xxx FM25V02 FM25V02 -G FM25H20 DFN8 FM25V05 FM25C160 FM25CL64
    Text: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that


    Original     		PDF AN-304 FM25xxx. FM24xxx AN304 FM25L256 FM25L256B) FM25H20 FM25V10/V05/V02 FM25V10 I2C programming example FM25L04 FM25xxx FM25V02 FM25V02 -G DFN8 FM25V05 FM25C160 FM25CL64

    FM25L04

    Abstract: FM25H20 AN304 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B
    Text: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that


    Original     		PDF AN-304 FM25xxx. FM24xxx AN304 FM25L256 FM25L256B) FM25H20 FM25L04 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B

    Untitled

    Abstract: No abstract text available
    Text: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN


    Original     		PDF LH5164AN

    Untitled

    Abstract: No abstract text available
    Text: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are


    Original     		PDF TK89C668 DS015 8051microcontroller 64Kx8 P89C668

    FM3130-G

    Abstract: FM3130-GTR FM3130 FM3130G 4558 bcd
    Text: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8


    Original     		PDF FM3130 FM3164. FM3130-G FM3130-GTR FM3130 FM3130G 4558 bcd

    FM3130-g

    Abstract: fm3130 FM3130G FM3130-GTR 8030 8pin STATIC RAM 8464
    Text: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM • Internally Organized as 8Kx8


    Original     		PDF FM3130 FM3130 FM3130-g FM3130G FM3130-GTR 8030 8pin STATIC RAM 8464

    FM3130

    Abstract: No abstract text available
    Text: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8


    Original     		PDF FM3130 FM3164. FM3130

    Untitled

    Abstract: No abstract text available
    Text: FM25640B 64-Kbit 8 K x 8 Serial (SPI) Automotive F-RAM 64-Kbit (8 K × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes


    Original     		PDF FM25640B 64-Kbit 64-Kbit 121-year FM25640B

    Untitled

    Abstract: No abstract text available
    Text: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) Automotive F-RAM 64-Kbit (8 K × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes


    Original     		PDF FM25CL64B 64-Kbit 64-Kbit 121-year FM25CL64B

    Untitled

    Abstract: No abstract text available
    Text: FM25640B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25640B 64-Kbit 64-Kbit 151-year FM25640B

    Untitled

    Abstract: No abstract text available
    Text: FM16W08 64-Kbit 8 K x 8 Wide Voltage Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		PDF FM16W08 64-Kbit 64-Kbit 151-year 70-ns 130-ns

    Untitled

    Abstract: No abstract text available
    Text: FM25CL64B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		PDF FM25CL64B 64-Kbit 64-Kbit 151-year FM25CL64B

    Untitled

    Abstract: No abstract text available
    Text: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		PDF FM1608B 64-Kbit 64-Kbit 151-year 70-ns 130-ns

    EDI8808CB

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12

    Untitled

    Abstract: No abstract text available
    Text: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM


    OCR Scan     		PDF PNC10C68 PNC10C68 PS2385

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell


    OCR Scan     		PDF 353011M 00D0141 8808ACL 8808ACL 8808ACL-10 8808ACL-85 8808ACL-CMHR

    hitachi eprom

    Abstract: HMCS6800
    Text: • APPLICATION 1. Static RAM tc o tt time for chip select to data retention : The 1.1. Static RAM Memory Cell The static RAM memory cell consists of flip-flops organized as 4 NMOS transistors and 2 load resistors as shown in figure 1-1. The data in the cell can be


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8808C ^ E D 35/45/55/70 Monolithic I The fu tu re . . . today, 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808C is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs and 8


    OCR Scan     		PDF EDI8808C EDI8808C MIL-STD-883C, EDI8808C35/45/55/70

    26R2-5

    Abstract: No abstract text available
    Text: m EDI8808CA35/45/55ÏÏ0 o \ High Speed 64K Monolithic RAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs, and 8 common


    OCR Scan     		PDF EDI8808CA35/45/55/70 EDI8808CA MIL-STD-883C, EDI8808CA35/45/55/70 26R2-5

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8808CA35/45/55/70 High Speed 64K Monolithic RAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power 64Kbit CMOS Static CMOS Static RAM organized as 8192 words by 8 bits Random Access Memory • Access Times 35,45,55, and 70ns


    OCR Scan     		PDF EDI8808CA35/45/55/70 EDI8808CA 64Kbit EDI8808CA35/45/55/70 EDI8808CA35/45/S5/70

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits


    OCR Scan     		PDF XL24410 XL24810 XL2441ODS

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic RAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic RAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)


    OCR Scan     		PDF EDI8810H/L ecEDI8810H/L 8810H/L