NTE6508
Abstract: No abstract text available
Text: NTE6508 Integrated Circuit CMOS, 1K Static RAM SRAM Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive
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NTE6508
NTE6508
20mW/MHz
300ns
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mk48t08
Abstract: DS1644 DS1644LPM
Text: DS1644LPM DS1644LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Upward compatible with the DS1643AL Timekeeping RAM to achieve higher RAM density • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source
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DS1644LPM
DS1643AL
DS1644L
DS1644LPM
mk48t08
DS1644
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Untitled
Abstract: No abstract text available
Text: 19-0154; Rev 2; 11/05 Nonvolatile RAM Controller The MXD1210 nonvolatile RAM controller is a very lowpower CMOS circuit that converts standard volatile CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to
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MXD1210
MXD1210
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Non-Volatile RAM
Abstract: MXD1210 MXD1210CPA MXD1210CSA MXD1210CWE MXD1210EPA MXD1210ESA MXD1210EWE MXD1210MJA
Text: 19-0154; Rev 2; 11/05 Nonvolatile RAM Controller The MXD1210 nonvolatile RAM controller is a very lowpower CMOS circuit that converts standard volatile CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protection when power to the RAM is in a marginal (out-of-tolerance) condition. When the power supply begins to
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MXD1210
MXD1210
Non-Volatile RAM
MXD1210CPA
MXD1210CSA
MXD1210CWE
MXD1210EPA
MXD1210ESA
MXD1210EWE
MXD1210MJA
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DS1216
Abstract: DS1216B DS1216C DS1216D DS1216E DS1216F DS1216H
Text: DS1216 SmartWatch RAM DS1216B/C/D/H ; SmartWatch ROM (DS1216E/F) www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy
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DS1216
DS1216B/C/D/H)
DS1216E/F)
DS1216
600-mil-wide
DS1216B
DS1216C
DS1216D
DS1216E
DS1216F
DS1216H
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MK48T08
Abstract: DS1643 DS1643-150
Text: DS1643 DS1643 Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Form, fit, and function compatible with the MK48T08 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source • Standard JEDEC bytewide 8K x 8 static RAM pinout
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DS1643
MK48T08
DS1643
MK48T08
DS1643-150
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ds1216
Abstract: ds1216 4m DS1216B DS1216C DS1216D DS1216E DS1216F DS1216H
Text: DS1216 SmartWatch RAM DS1216B/C/D/H ; SmartWatch ROM (DS1216E/F) www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy
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DS1216
DS1216B/C/D/H)
DS1216E/F)
DS1216
600-mil-wide
SmartWa20
ds1216 4m
DS1216B
DS1216C
DS1216D
DS1216E
DS1216F
DS1216H
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M1508
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT Description The µPD4616112 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4616112
16M-BIT
16-BIT
PD4616112
48-pin
I/O16)
M1508
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DS1216
Abstract: No abstract text available
Text: DS1216 SmartWatch RAM DS1216B/C/D/H ; SmartWatch ROM (DS1216E/F) www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy
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DS1216
DS1216B/C/D/H)
DS1216E/F)
DS1216
600-mil-wide
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M1508
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT Description The µPD4616112 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4616112
16M-BIT
16-BIT
PD4616112
48-pin
I/O15)
M1508
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT Description The µPD4616112 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.
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PD4616112
16M-BIT
16-BIT
PD4616112
48-pin
I/O15)
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6561B
Abstract: Intersil 6561/883 6561
Text: HM-6561/883 TM 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit
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HM-6561/883
MIL-STD883
HM-6561/883
20mW/MHz
200ns
6561B
Intersil 6561/883
6561
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MK48T08
Abstract: 34-pin DS1643
Text: DS1643AL PRELIMINARY DS1643AL Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Functionally compatible with the MK48T08 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power– fail control circuit and lithium energy source • Clock
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DS1643AL
MK48T08
DS1643AL
34-pin
DS1643
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DS1642-100
Abstract: DS1642 DS1642-70
Text: DS1642 Nonvolatile Timekeeping RAM www.dalsemi.com FEATURES Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source Standard JEDEC bytewide 2K x 8 static RAM pinout Clock registers are accessed identically to the
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DS1642
DS1642
24-PIN
24-PIN
DS1642-100
DS1642-70
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ds1216
Abstract: 4013 n
Text: 19-6075; Rev 11/11 DS1216 SmartWatch RAM DS1216B/C/D/H ; SmartWatch ROM (DS1216E/F) GENERAL DESCRIPTION FEATURES The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy
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DS1216
DS1216B/C/D/H)
DS1216E/F)
DS1216
600-mil-wide
AM-PM/12-/24-MODE,
4013 n
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7 segment display LTS 542
Abstract: cs 1694 eo s314 7 segment display LTS 543 R45X lts 542 7 segment display lts 542 pin diagram 30s239 lts 542 lts 543 data sheet
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161622 396 OUTPUT TFT-LCD SOURCE DRIVER WITH RAM DESCRIPTION The µ PD161622 is a TFT-LCD source driver that includes display RAM. This driver has 396 outputs, a display RAM capacity of 371,712 bits 132 pixels x 16 bits x 176 lines and, can
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PD161622
PD161622
536-color
8-bit/16-bit
7 segment display LTS 542
cs 1694 eo
s314
7 segment display LTS 543
R45X
lts 542 7 segment display
lts 542 pin diagram
30s239
lts 542
lts 543 data sheet
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IC 7447 data sheet
Abstract: y445 Y446 Y449 lts 543 data sheet Y528 y519 Y439 Y515 Y443
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161623 528 OUTPUT TFT-LCD SOURCE DRIVER WITH RAM DESCRIPTION The µ PD161623 is a TFT-LCD source driver that includes display RAM. This driver has 528 outputs, a display RAM capacity of 760,320 bits 176 pixels x 18 bits x 240 lines and, can
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PD161623
PD161623
144-color
18-bit/16-bit
IC 7447 data sheet
y445
Y446
Y449
lts 543 data sheet
Y528
y519
Y439
Y515
Y443
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RB1002
Abstract: UM83C002 ST412HP UM83C001 127fl
Text: UNICORN MIC ROE LECTRONICS 54E D • ^76700 QGQQ37S *1 ■ UM83C002 Ü M Ö RAM Buffer Controller Features ■ ■ * ■ ■ ■ ■ ■ No lost RAM cycles for DMA break-in 3 DMA channels Host processor port Refresh circuit for dynamic RAM buiit-in RAM access priority network
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127fl7Ã
GGQD37S
UM83C002
UM83C002,
UM83C002
RB1002
ST412HP
UM83C001
127fl
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lm815
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59LM815/07/03BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM
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TC59LM815/07/03
BFT-22
304-WORDSx4BANKSx
16-BITS
608-WORDSX4BANKSX8-BITS
216-WORDS
TC59LM815/07/03BFT
TC59LM815BFT
304-wordsX4
TC59LM807BFT
lm815
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM
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TC59LM814/06/02BFT-22
TC59LM814/06/02BFT
TC59LM814BFT
304-words
TC59LM806BFT
TC59LM802BFT
LM814/06/02
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Untitled
Abstract: No abstract text available
Text: ^ 1-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-W 0RDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM
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TC59LM814/06CFT
TC59LM814CFT
304-words
TC59LM806CFT
TC59LM614/06CFT-50
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Untitled
Abstract: No abstract text available
Text: DS1644/DS1644LPM DALLAS SEMICONDUCTOR DS1644/DS1644LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Upward compatible with the DS1643 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source
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DS1644/DS1644LPM
DS1643
68-pin
DS1644/DS
1644LPM
DS1644LPM
34-PIN
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT DS1644/DS1644LPM A14 | 1 • Upward compatible with the DS1643 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source -
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DS1643
68-pin
DS1644/DS1644LPM
DS1644LPM
34-PIN
34P-SMT-3.
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IC3014
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA40 SERIES 1 M-WORD BY 40-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000AA40 is a 1 048 576 words by 40 bits dynamic RAM module on which 10 pieces of 4 M bits CMOS Dynamic RAM /{PD424400 are assembled.
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MC-421000AA40
40-BIT
uPD424400
40AA40
MC-421000AA40B,
421000AA40F
72B-50A26-1
27-ooa
IC3014
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