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    Untitled

    Abstract: No abstract text available
    Text: IDT54/74FCT240T/AT/CT/DT - 2240T/AT/CT IDT54/74FCT241T/AT/CT/DT - 2241T/AT/CT IDT54/74FCT244T/AT/CT/DT - 2244T/AT/CT IDT54/74FCT540T/AT/CT IDT54A74FCT541/2541T/AT/CT FAST CMOS OCTAL BUFFER/LINE DRIVERS FEATURES: DESCRIPTION: • Common features: - Low input and output leakage <1 pA max.


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    PDF IDT54/74FCT240T/AT/CT/DT 2240T/AT/CT IDT54/74FCT241T/AT/CT/DT 2241T/AT/CT IDT54/74FCT244T/AT/CT/DT 2244T/AT/CT IDT54/74FCT540T/AT/CT IDT54A74FCT541/2541T/AT/CT FCT240T/FCT2240T, FCT241T/FCT2241T

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N « [ OPA2337 1 MicroSlZE, Single-Supply CMOS OPERATIONAL AMPLIFIER M icroAm plifier Series FEATURES • • • • • • • • DESCRIPTION MicroSlZE PACKAGE: SOT-23-8 SINGLE SUPPLY OPERATION RAIL-TO-RAIL OUTPUT SWING FET-INPUT: lB = 10pA max


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    PDF OPA2337 OT-23-8 120dB OPA2337 17313b5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 128K x 36, 3.3V SYNCHRONOUS SRAM IDT71V547 WITH ZBT FEATURE, BURST COUNTER AND FLOW-THROUGH OUTPUTS D ev ice T ech n ology , l i e . FEATURES: • 128K x 36 memory configuration, flow-through outputs. • Supports high performance system speed -1 0 0 MHz


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    PDF IDT71V547 100-pin 71V547 PK100-1) 71V547S75PF 71V547S80PF 71V547S90PF 71V547S1OOPF

    Untitled

    Abstract: No abstract text available
    Text: 4 K x 16 FourPort STATIC RAM MULTICHIP MODULE PRELIMINARY IDT70M74 Integrated Device Technology, Inc. FEATURES: • High density 64K-bit FourPort™ static RAM multichip module • High-speed access — Commercial: 25, 30, 35, 45ns max. — Military: 30, 35, 45ns (max.)


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    PDF IDT70M74 64K-bit 160-pin

    Untitled

    Abstract: No abstract text available
    Text: GAL20LV8ZD Lattice Low Voltage, Zero Power E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES l/C L K — [> • 3.3V LOW VOLTAGE, ZERO POWER OPERATION — JEDEC Compatible 3.3V Interface Standard — Interfaces with Standard 5V TTL Devices


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    PDF GAL20LV8ZD

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VSC8063 Advanced Product Information STM- 16/STS-4816:1 Multiplexer with Integrated Clock Generation Features • 16:1 2.488 Gb/s Multiplexer • Integrated PLL for Clock Generation No External Components • 16-bit Wide, Single-ended, ECL 100K Compatible Parallel Data Interface


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    PDF VSC8063 16/STS-4816 16-bit 52-pin VSC8063 STM-16/STS-48 G52134-0,

    IS28F010

    Abstract: IS28F010-45PL
    Text: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt


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    PDF IS28F01Q 32-pin IS28F010-120PL IS28F010-120T IS28F010-45WI 600-mil IS28F010-45PLI IS28F010-45TI IS28F010 IS28F010-45PL

    se 140

    Abstract: No abstract text available
    Text: MOSEL M S 72105 / 72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 2 5n s para lle l p ort a ccess tim e The M S 7 21 0 5 and M S 7 21 1 5 are hig h -sp ee d , low pow e r 16-bit p a ra lle l-to -se ria l FIFO s. T h e se FIFO s a re w ell su ited fo r any


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    PDF 256x16 512x16 DO-15 MS72115 MS72105-25NC MS72115-25NC MS72105-25FC MS72115-25FC MS72105-50NC MS72115-50NC se 140

    IDT7M624

    Abstract: No abstract text available
    Text: 1 MEGABIT CMOS STATIC RAM MODULE IDT 7M624S FEATURES: DESCRIPTION: • High-density 1024K-bit CMOS static RAM module • Customer-configured to 64K x 16, 128K x 8 or 256K x 4 • Fast access times - Military: 35ns max. - Commercial: 25ns (max.) • Low power consumption


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    PDF 1024K-bit IDT7187 40-pin, IDT7M656 S13-6 IDT7M624S IDT7M624 MIL-STD-883, 1024K-Bit)

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 6 1 C 5 1 2 64K x 8 HIGH-SPEED CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The I S S I IS61C512 is a very high-speed, low power, 65,536 word by 8-bit C M O S static RAM s. T he y are fabricated using


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    PDF IS61C512 IS61C 512-20T 512-25J IS61C512-25N 512-25T IS61C512-35J

    Untitled

    Abstract: No abstract text available
    Text: FAST CMOS OCTAL D FLIP-FLOP WITH CLOCK ENABLE IDT 54/74FCT377 IDT 54/74FCT377A FEATURES: DESCRIPTION: • IDT54/74FCT377 equivalent to FAST speed; IDT54/74FCT377A 45% faster than FAST ™ • Equivalent to FAST ’ “ output drive over full temperature and voltage supply extremes


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    PDF IDT54/74FCT377 IDT54/74FCT377A MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS28F020 262,144 CMOS FLASH MEMORY x 8 p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 nA maximum standby current • Compatible with JEDEC-standard byte-wide


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    PDF IS28F020 32-pin 600-mil IS28F020-70WI IS28F020-70PLI IS28F020-70TI

    Untitled

    Abstract: No abstract text available
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Low Power operation (Commercial) - 715 mW Active -10/12 - 550 mW Active - 15/20/25


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    PDF P4C148, P4C149 P4C148 P4C148 -P4C149 18-Pin 096-bit

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


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    PDF P4C150 24-Pin 28-Pin SMD-5962-88588 -15LM -20LM -25LM

    Untitled

    Abstract: No abstract text available
    Text: issr IS42G32256_ 256K x 32 x 2 16-Mbit SYNCHRONOUS GRAPHICS RAM ADVANCE INFORMATION SEPTEMBER 1998 FEATURES GRAPHIC FEATURES • 256,144 words x 32 bits x 2-bank organization • All inputs are sampled at the positive going edge of the system clock


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    PDF IS42G32256_ 16-Mbit) IS42G32256 16-Mbit PK13197PQ 5M-1982.

    Untitled

    Abstract: No abstract text available
    Text: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion


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    PDF 32-pin IS28F010-45WI IS28F010-45PLI IS28F010-45TI 600-mll IS28F010-70WI IS28F010-70PLI IS28F010-70TI 600-mil IS28F010-90WI

    Untitled

    Abstract: No abstract text available
    Text: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) - 25/35ns (Commercial) - 25/35/45ns (Military) ■ Low Power Operation (Commercial/Military)


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    PDF P4C163/P4C163L 25/35ns 25/35/45ns P4C163L P4C163L 28-Pin P4C163

    Untitled

    Abstract: No abstract text available
    Text: P3C3148 SUPER FAST 1K x 4 STATIC CMOS RAM SCRAM FEATURES Separate Data I/O • Highspeed - 5/6Z7/8 ns (Address Access) - 3/4/S/6 ns (Chip Select Access) Three-State Outputs TTL Logic Level Inputs and Outputs ■ Single 3.3V ± 0.2V Power Supply Produced with PACE III Technology


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    PDF P3C3148 24-Pin 28-Pin 450x450 P3C3148

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS318002 high performance Read Only Memory is organ­ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high


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    PDF MS318002 200ns MS318002 275mW PID058 MS318002-20 P32-2

    d 1548

    Abstract: MPEM P4C1298
    Text: P4C1298/P4C1298L, P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS ' X r- FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military)


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    PDF P4C1298/P4C1298L, P4C1299/P4C1299L P4C1298/99 P4C1298L/99L P4C1298 P4C1299 28-Pin C1298/L P4C1299/L d 1548 MPEM P4C1298

    IS27HC010-45CW

    Abstract: No abstract text available
    Text: IS27HC010 131,072 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 30 ns • Pin compatible with the IS27C010 • High-speed write programming — Typically less than 30 seconds • Industrial and commercial temperature ranges available


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    PDF IS27HC010 IS27C010 32-pin The/SS7IS27HC010 128Kword IS27CQ10, 600-mil IS27HC010-30WI IS27HC010-30PLI IS27HC010-45CW

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61S6432 64K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JANUARY 1997 FEATURES DESCRIPTION • The IS S IIS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-perfor­ mance, secondary cache for the Pentium , 680X0™, and


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    PDF IS61S6432 IIS61S6432 680X0TM, SR81995C6432A SR81995C6432A IS61S6432-5TQ IS61S6432-5PQ IS61S6432-6TQ

    idt7134

    Abstract: orite IDT71342 IDT71342LA IDT71342SA
    Text: Integrated D evice T ech nology, Inc. CMOS DUAL-PORT RAM 32K 4K x 8-BIT WITH SEMAPHORE PRELIMINARY IDT71342SA IDT71342LA FEATURES: DESCRIPTION: • The IDT71342 is an extremely high-speed 4K x 8 dual-port static FtAM with full on-chip hardware support of semaphore


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    PDF IDT71342SA IDT71342LA 35/45/55/70ns 25/35/45/55/70ns 1DT71342SA 500mW IDT71342LA MIL-STD-883, IDT71342 idt7134 orite

    GAL20ra10

    Abstract: No abstract text available
    Text: Lattice' Semiconductor Corporation FEATURES • HIGH PERFORM ANCE E*CMOS* TECHNOLOGY — 20 ns Maximum Propagation Delay — Fmax =41.7 MHz — 20 ns Maximum from Clock Input to Data Output — TTL Compatible 8 mA Outputs — UltraMOS* Advanced CMOS Technology


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    PDF GAL20RA10/883C GAL20RA10/ GAL20RA10/883C 24-Pin 28-Pin -883C GAL20RA10-20LD/883C GAL20RA10-20LR/883C GAL20RA10-25LD/883C GAL20RA10-25LR/883C GAL20ra10