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    RAYTHEON REF Search Results

    RAYTHEON REF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADR430ARZ Analog Devices 2.0 V Reference Visit Analog Devices Buy
    ADR433ARMZ Analog Devices 3.0 V Reference Visit Analog Devices Buy
    ADR431BRZ-REEL7 Analog Devices 2.5 V Reference Visit Analog Devices Buy
    ADR435BRMZ Analog Devices 5.0 V Reference Visit Analog Devices Buy
    ADR430ARMZ-REEL7 Analog Devices 2.0 V Reference Visit Analog Devices Buy

    RAYTHEON REF Datasheets Context Search

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    12 volts 50 watt amplifier schematic diagram

    Abstract: schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J
    Text: Raytheon Raytheon Commercial Electronics RMBA09500-58 Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver


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    PDF RMBA09500-58 RMBA09500 12 volts 50 watt amplifier schematic diagram schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J

    RAYTHEON

    Abstract: GRM39COG100J050AD RMBA19500 RMBA19500-58 03-o Raytheon Application Note DCS-1800
    Text: Raytheon Raytheon Commercial Electronics RMBA19500-58 PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier The RMBA19500 is a high power, highly linear Power Amplifier. The circuit uses RaytheonÕs pHEMT process. It has been designed for use as a driver stage for PCS/DCS1800 base stations, or as the output stage for


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    PDF RMBA19500-58 PCS/DCS1800 RMBA19500 RAYTHEON GRM39COG100J050AD RMBA19500-58 03-o Raytheon Application Note DCS-1800

    RAYTHEON

    Abstract: RMPA0951-102 RO4003 PA0951
    Text: Raytheon Raytheon Commercial Electronics RMPA0951-102 3V Cellular CDMA Power Amplifier Module The RMPA0951-102 is a dual mode, small outline power amplifier module for Cellular CDMA personal communication system applications. The Power Amplifier Module is internally-matched to 50 ohms and DC blocked which


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    PDF RMPA0951-102 RMPA0951-102 RMPA0951 RAYTHEON RO4003 PA0951

    RAYTHEON

    Abstract: RMPA2051 RMPA2051-102 RO4003 Rogers RO4003 mmic marking brown
    Text: Raytheon Raytheon Commercial Electronics RMPA2051-102 3V WCDMA/CDMA2000 Power Amplifier Module The RMPA2051-102 is a small outline, low-profile power amplifier for WCDMA/CDMA2000 applications. The Power Amplifier Module PAM is internally matched to 50 ohms and DC blocked which minimizes the use of


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    PDF RMPA2051-102 WCDMA/CDMA2000 RMPA2051-102 50-ohm RAYTHEON RMPA2051 RO4003 Rogers RO4003 mmic marking brown

    long range gold detector circuit diagram

    Abstract: gold detector circuit gold detector circuit diagram thermal conductivity detector amplifier RAYTHEON RMWP38001 rf power detector circuit diagram
    Text: Raytheon Raytheon Commercial Electronics RMWP38001 37 to 40 GHz Power Amplifier MMIC Description The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In


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    PDF RMWP38001 RMWP38001 long range gold detector circuit diagram gold detector circuit gold detector circuit diagram thermal conductivity detector amplifier RAYTHEON rf power detector circuit diagram

    se110

    Abstract: No abstract text available
    Text: APPLICATION/CHIP CROSS REFERENCE – FILTER SOLUTIONS Composite Video Decoder Chips Manufacturer/Type Low Cost Medium Top Performance FairChild/Raytheon Passive Hybrid Passive Hybrid Passive Hybrid TMC22152/3 TMC22X5Y 1 As above, non oversampled TFM1350F FHS1350F


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    PDF TMC22152/3 TMC22X5Y TFM1350F FHS1350F TFT1350F AH892 601F0575 BT812 se110

    XR2207CP

    Abstract: raytheon xr2207
    Text: RAYTHEON-. 7597360 SEMICONDUCTOR S7 DE~| 7 S T 7 3 t . Q RAYTHEON CO» GOGMTSG 57C 4 04950 T~50-\S LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Voltage-Controlled Oscillator Raytheon XR-2207 Features Description • ■ ■ ■ ■ ■ ■ ■ ■ ■


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    PDF 50-\S XR-2207 XR2207CP raytheon xr2207

    cmos ic 4584

    Abstract: transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon
    Text: RAYTHEON/ SEMICONDUCTOR HE D I 75ci73tI0 0Q0t.5bl 3 Raytheon Company Semiconductor Division Raytheon CGA70E18 CGA40E12 CGA1ME12 High Density Low Power ECL Gate Array Family Features • Superior performance, lower power, and higher density than existing ECL arrays


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    PDF i73tI0 CGA70E18 CGA40E12 CGA1ME12 70E18) 70E18: cmos ic 4584 transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon

    2N2937

    Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
    Text: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low


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    PDF 2N930/JAN 2N2484/JAN 2N3117 2N930JAN 2N2484JAN 54BSC 27BSC 100BSC 050BSC -100BSC 2N2937 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON-. SEMICONDUCTOR 57 DE* □□□MflOb Ö T- 7 3- 1 3- 03 57C 0 4 8 0 6 7 5 9 7 3 6 0 RAYTHEON CO» LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Voltage-to-Frequency Converters Raytheon Features • Single supply operation ■ Pulse output compatible with all logic forms


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    PDF 7ST73t RC4151,

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR H E D I ? S cl 7 3 b a Raytheon Company Semiconductor Division GG0 t . 7 t. b D T Preliminary Raytheon RAY1.25VG Ultra Low Power, Very High Speed, High Density HCMOS Gate Array Family Features Il n • Production proven process ■ VHSIC — Phase 1 compatibility including


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    PDF RVG10 RVG15 RVG20

    transistor T79

    Abstract: LM324N LM224J
    Text: RAYTHEON-. SEMICONDUCTOR 57 » É J 75^73^.0 O O O M ^ 57C 0 4 4 4 9 .7597 360 RAYTHEON CO* PRO D U CT SPECIFICATIO N S Raytheon Single-Supply Quad Operational Amplifiers Features • ■ ■ ■ ■ ■ Large DC voltage gain — 100dB Compatible with all forms of logic


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    PDF LM124/224/324 100dB LM124/224/324/2902 i73bO 5-01800A transistor T79 LM324N LM224J

    RC4195TK

    Abstract: No abstract text available
    Text: RAYTHEON-. SEMICONDUCTOR DEj7ST73t.O OQGMûôB M LINEAR INTEGRATED CIRCUITS p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON COt Raytheon 5? 57C 0 4 8 8 3 Fixed ±15V Dual Tracking Voltage Regulator D RC4195 t - 5 8 - i i -03~ Features Description


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    PDF DEj7ST73t RC4195 100mA RC/RM4195 T-58-11-03 2N4905 RC4195TK

    RC3403ADB

    Abstract: MAX 7910 RV3403ADB RM3503ADC RC3403ADC RC3403 LM324 as wein bridge oscillator RAYTHEON SEMICONDUCTOR RC-350 RAYTHEON
    Text: RAYTHEON^ SEMICONDUCTOR 57 De J 75T73fc>0 □DQ4bO]i 1 | ^ 57C 04 60 1 7 5 9 7 3 6 0 “ RAYTHEON“ CO* P R O D U C T S PEC IFIC ATIO N S Raytheon LINEAR INTEGRATED CIRCUITS Ground Sensing Quad Operational Amplifier Features RC3403A, RC3503A Mask Pattern


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    PDF 75T73bO T-79-10 RC3403A, RC3503A LM324 MC3403 RC/RV3403A RM3503A Q004bll RG3403A, RC3403ADB MAX 7910 RV3403ADB RM3503ADC RC3403ADC RC3403 LM324 as wein bridge oscillator RAYTHEON SEMICONDUCTOR RC-350 RAYTHEON

    RC3302DB

    Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
    Text: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V


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    PDF LM139/139A, 239/239A, 339/339A, RC3302 1N914 73tiO 0470ci RC3302DB ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon

    Untitled

    Abstract: No abstract text available
    Text: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and


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    PDF 100mA. 2N3250A/JAN 2N3251A/JAN 5-1022A DDDS01S 27BSC 254BSC 050BSC 100BSC

    RL7320

    Abstract: RL76 8 bit barrel shifter T-42-11-09 transistor 2N RL7220 8 BIT ALU by 74181
    Text: RAYTHEONi 7597360 SEMICONDUCTOR RAYTHEON» AO De 7ST73bO SEMICONDUCTOR DDDS32T 80C 0 5 3 2 9 Product Specifications Configurable Gate Arrays 5 T-42-11-09 RL7000 Series Raytheon RL7000 Series Silicon-Gate HCMOS Logic Arrays Features • Silicon-gate 2.0/u (drawn HCMOS technology


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    PDF 7ST73bO DDDS32T T-42-11-09 RL7000 MUX21LA) 16-Bit RL7320 RL76 8 bit barrel shifter transistor 2N RL7220 8 BIT ALU by 74181

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics RMPA0910-53 824 to 849 MHz Dual Mode Power Amplifier Description Raytheon RMPA0910-53 is a high efficiency dual mode power amplifier module, in a surface mount package, designed for use in A M PS Advanced Mobile Phone Service and CD M A (Code Division Multiple


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    PDF RMPA0910-53 RMPA0910-53

    2N3640

    Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
    Text: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed


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    PDF 2N4208 2N2409 2N5910 2N2894A 65-1025B 050BSC 100BSC 27BSC 54BSC 2N3640 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894

    Untitled

    Abstract: No abstract text available
    Text: RC4391 ?ST73tiG O O Oböfll T • f - RAYTHEON/ SEMICONDUCTOR RC4391 Inverting and Step-Down Switching Regulator The 4391 complements the other Raytheon switching regulator 1C, the RC4190. The 4190 is dedicated to step-up VOUT > VIN applica­ tions, while the 4391 was designed up for


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    PDF RC4391 ST73tiG RC4190. 100pF

    circuit integrate TB 1226 CN

    Abstract: RC4200ANB RC4200ADE RC420 RM4200 rv4200nb "analog multiplier" RC4200NB rc4200 raytheon
    Text: RAYTHEON-, 7597360 SEMICONDUCTOR 57 T F 1 TSTTgbD RAYTHEON COf 5 7C “i 04913 D T-73- LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS R a y H ie o n Analog Multiplier Features • High accuracy Non-linearity — 0.1% maximum Temperature coeff icient— 0.005%/° C maximum


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    PDF T-73PRODUCT RC4200 RC4200 RV4200NB RC4200NB RV4200ANB RC4200ANB circuit integrate TB 1226 CN RC4200ADE RC420 RM4200 "analog multiplier" rc4200 raytheon

    Untitled

    Abstract: No abstract text available
    Text: 1 8 1991 Preliminary Product Specifications Linear Integrated RV4141 Raytheon RV4141 Low Power Ground Fault Interrupter interrupter then disconnects the load from the line before a harmful or lethal shock occurs.


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    PDF RV4141 RV4141 MS-012-AA

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


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    PDF r88uct RFA120 mu24 dc SWT-2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Specifications ATE and Instrumentation Products RC7341 RC7341 High Speed Window Comparator Raytheon January 1994 2.0 ns Propagation Delay Features • Available with common threshold input comparator. ■ 12V max differential input voltage


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    PDF RC7341 RC7341 RC7341) 16-pin 28-pin 75T73LD