BF771
Abstract: 7GMa BF771 E6327
Text: BF771 NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF771 RBs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BF771
VPS05161
BF771
7GMa
BF771 E6327
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Untitled
Abstract: No abstract text available
Text: BF771 NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF771 RBs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BF771
VPS05161
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MARKING CODE 21E SOT23
Abstract: No abstract text available
Text: BF771 NPN Silicon RF Transistor • For modulators and amplifiers 2 3 in TV and VCR tuners 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF771 Marking RBs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter
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BF771
MARKING CODE 21E SOT23
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advantages and disadvantage of modem
Abstract: digital modem v.92 v.90 DUSLIC G.711 V-90 modem pcm modulation "digital pad" modem DuSLIC modem
Text: DuSLIC – Infineons High Modem Performance Codec Introduction Modems that use the regular telephone network are and will be the dominant technology for the internet access and other data applications. The reasons among others are inexpensive technology, high volume and access possibilities from anywhere a phone is located. Over the years, modems
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56kbit/s
advantages and disadvantage of modem
digital modem v.92 v.90
DUSLIC
G.711
V-90 modem
pcm modulation
"digital pad" modem
DuSLIC modem
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IKCS08F60F2C
Abstract: IKCS08F60F2A
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS08F60F2A IKCS08F60F2C http://www.lspst.com For Power Management Application CIPOS™ IKCS08F60F2A IKCS08F60F2C Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.1
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full bridge driver 600v SOI
Abstract: IKCS12F60AA semitech
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS12F60AA IKCS12F60AC http://www.lspst.com For Power Management Application CIPOS™ IKCS12F60AA IKCS12F60AC Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.3
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IKCS12F60AA
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IKCS12F60AA
full bridge driver 600v SOI
semitech
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IKCS12F60F2A
Abstract: IKCS12F60F2C "AC Motor" APPLICATIONS
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS12F60F2A IKCS12F60F2C http://www.lspst.com For Power Management Application CIPOS™ IKCS12F60F2A IKCS12F60F2C Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.0
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IKCS12F60F2A
IKCS12F60F2C
"AC Motor" APPLICATIONS
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IKCS22F60F2C
Abstract: IKCS22F60F2A
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS22F60F2A IKCS22F60F2C http://www.lspst.com For Power Management Application CIPOS™ IKCS22F60F2A IKCS22F60F2C Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.1
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IKCS22F60AA
Abstract: No abstract text available
Text: Datasheet, Preliminary, Februar 2007 Control integrated Power System CiPoS IKCS22F60AA http://www.infineon.com/cipos Power Management & Drives N e v e r s t o p t h i n k i n g . CiPoS™ IKCS22F60AA Revision History: Previous Version: Page 2007-02
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6EDL003L06-F
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CiPoS IKCS12F60AA
Abstract: DC MOTOR SPEED CONTROL USING IGBT VF 3 phase converter IGBT capacitor 100nf 400v 3 phase IGBT gate driver temperature controller h bridge 15V IGBT DRIVER SCHEMATIC 3 PHASE "AC Motors" 3 phase IGBT gate driver 6ED003L06-F IGBT cross reference
Text: Data Sheet, Preliminary, March 2007 Control integrated Power System CiPoS IKCS12F60AA IKCS12F60AB http://www.infineon.com/cipos Power Management & Drives N e v e r s t o p t h i n k i n g . CiPoS™ IKCS12F60AA, IKCS12F60AB Revision History: Previous Version:
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IKCS12F60AA
IKCS12F60AB
IKCS12F60AA,
6EDL003L06-F
CiPoS IKCS12F60AA
DC MOTOR SPEED CONTROL USING IGBT
VF 3 phase converter IGBT
capacitor 100nf 400v
3 phase IGBT gate driver
temperature controller h bridge 15V
IGBT DRIVER SCHEMATIC 3 PHASE
"AC Motors"
3 phase IGBT gate driver 6ED003L06-F
IGBT cross reference
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Untitled
Abstract: No abstract text available
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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BFP620
VPS05605
OT343
Aug-11-2004
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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PH marking code
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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VPS05605
OT343
PH marking code
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Untitled
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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OT343
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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R4S BFP640
Abstract: BFP640 transistor ph 45 v marking r4s
Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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BFP640
VPS05605
OT343
Aug-16-2004
R4S BFP640
BFP640
transistor ph 45 v
marking r4s
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RBS 3000
Abstract: 1g28
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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transistor marking R2s
Abstract: germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK
Text: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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BFP620
OT343
transistor marking R2s
germanium transistor ac 128
BFP620
BGA420
T-25
RBS INFINEON
TRANSISTOR MARKING NK
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IKCS12F60B2A
Abstract: IKCS12F60B2C IKCS12F60B
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS12F60B2A IKCS12F60B2C http://www.lspst.com For Power Management Application CIPOS™ IKCS12F60B2A IKCS12F60B2C Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.2
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elmwood sensors ltd
Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
Text: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this
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BMIC/Ele03
elmwood sensors ltd
elmwood thermal switch
saft rectifier
ABB sensycon
SICK OPTEX
elmwood sensors
Oscillatek
abb entrelec relays
Litton Electron Devices microwave tubes
Anzac Electronics
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BFP620
Abstract: BGA420 T-25 KF 25 transistor AF 2596
Text: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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OT343
BFP620
BGA420
T-25
KF 25 transistor
AF 2596
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RBS 3000
Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
BFP650
BFP650 noise figure
BGA420
T-25
RBS INFINEON
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Untitled
Abstract: No abstract text available
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz
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VPS05605
OT343
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IKCS17F60B2A
Abstract: IKCS17F60B2C
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IKCS17F60B2A IKCS17F60B2C http://www.lspst.com For Power Management Application CIPOS™ IKCS17F60B2A IKCS17F60B2C Revision History: Previous Version: Page 2010-06 Rev.1.0 Infineon Technologies Data Sheet Ver. 2.2
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