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    RC 1/2 101 J TB Search Results

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    RC 1/2 101 J TB Price and Stock

    Kamaya Inc RC1-2101JTB

    RES 100 OHM 5% 1/2W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RC1-2101JTB Ammo Pack
    • 1 -
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    Vishay Intertechnologies CRCW1210100RJNTA

    Thick Film Resistors - SMD 1/2watt 100ohms 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW1210100RJNTA 4,767
    • 1 $0.47
    • 10 $0.383
    • 100 $0.15
    • 1000 $0.063
    • 10000 $0.052
    Buy Now

    Vishay Intertechnologies CRCW1210130RJNTA

    Thick Film Resistors - SMD 1/2watt 130ohms 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW1210130RJNTA
    • 1 $0.47
    • 10 $0.383
    • 100 $0.15
    • 1000 $0.063
    • 10000 $0.052
    Get Quote

    Kamaya Inc RC1/2101JTB

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange RC1/2101JTB 59,800
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    RC 1/2 101 J TB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RC1/2101JTB Kamaya Resistor 100 OHM 5% 1/2W AXIAL Original PDF

    RC 1/2 101 J TB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dc dc for CDI Circuit

    Abstract: thyristor cdi FD1500BV-90DA cdi unit gct thyristor
    Text: MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500BV-90DA 6.35 x 10.8 φ85 ± 0.2 TYPE NAME 26 ± 0.5 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN ¡IF AV Average forward current . 1500A


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    PDF FD1500BV-90DA 120MAX dc dc for CDI Circuit thyristor cdi FD1500BV-90DA cdi unit gct thyristor

    gct thyristor

    Abstract: FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr
    Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A


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    PDF FD500JV-90DA 75MAX gct thyristor FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr

    NAC-20-472

    Abstract: ADA600F-24 ADA600F-48 SPHD-002T-P05 ada1000f-24 ADA600F-30 ADA600F-36 DC90 ADA750F 250V25A
    Text: Ordering information Unit type ADA600F 2 F 3 -24 4 Recommended Noise Filter NAC-20-472 R ADA ADA 600 1 High voltage pulse noise type : NAP series Low leakage current type : NAM series *The Noise Filter is recommended *to connect with several devices. -O 5


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    PDF ADA600F NAC-20-472 SPHD-002T-P0 PHDR-14VS BPHD-001T-P0 BPHD-002T-P0 S14B-PHDSS NAC-20-472 ADA600F-24 ADA600F-48 SPHD-002T-P05 ada1000f-24 ADA600F-30 ADA600F-36 DC90 ADA750F 250V25A

    linflex

    Abstract: DSI RGB Bridge display PDI 40 PK413 pj 88 LV smd code pj4 2PCS02 MPC5606 PCR111 SMD Transistor PD8
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MPC5606S Rev. 7, 03/2011 MPC5606S MPC5606S Microcontroller Data Sheet MAPBGA–225 15 mm x 15 mm QFN12 ##_mm_x_##mm SOT-343R ##_mm_x_##mm PKG-TBD ## mm x ## mm LQFP144 20 x 20 mm 1 Overview


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    PDF MPC5606S MPC5606S QFN12 OT-343R LQFP144 LQFP176 linflex DSI RGB Bridge display PDI 40 PK413 pj 88 LV smd code pj4 2PCS02 MPC5606 PCR111 SMD Transistor PD8

    ST7FLiteUS5

    Abstract: HE10 AN1324
    Text: ST7LITEUSx 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, TIMERS PRELIMINARY DATA • ■ ■ ■ ■ Memories – 1K bytes single voltage Flash Program memory with read-out protection, In-Circuit and InApplication Programming ICP and IAP . 10K write/erase cycles guaranteed, data retention:


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    Untitled

    Abstract: No abstract text available
    Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free


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    PDF G220414 G240719 G260933 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free


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    PDF G220414 G240719 G260933 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    STM8S208

    Abstract: RM0016 STM8S 5401 DM pm0044 sda 5241 STM8 CPU programming manual LQFP32 LQFP44 LQFP48
    Text: STM8S207xx STM8S208xx Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN Features • ■ ■ ■ ■ Core – Max fCPU: Up to 24 MHz, 0 wait states @ fCPU ≤ 16 MHz – Advanced STM8 core with Harvard


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    PDF STM8S207xx STM8S208xx 10-bit STM8S208 RM0016 STM8S 5401 DM pm0044 sda 5241 STM8 CPU programming manual LQFP32 LQFP44 LQFP48

    D1208050B

    Abstract: guideline pad dimension 1210 CRCW0603 CRCW0805 CRCW1206 D251206 D120805 D110603
    Text: D.-CRCW Vishay Thick Film, Rectangular Chip Resistors FEATURES • • • • Metal glaze on high quality ceramic Protective overglaze Lead bearing 90 % Sn/10 % Pb solder contacts Excellent stability (ΔR/R ≤ ± 0.5 % for 1000 h at 70 °C) in different environmental conditions


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    PDF Sn/10 40401-802/EIA-575 CRCW0402 08-Apr-05 D1208050B guideline pad dimension 1210 CRCW0603 CRCW0805 CRCW1206 D251206 D120805 D110603

    Untitled

    Abstract: No abstract text available
    Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free


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    PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    draloric g206

    Abstract: G220414 g2407 RC draloric g202 G260933 CECC40201-801 S2 G204 G206
    Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free


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    PDF G220414 G240719 G260933 G270947 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 draloric g206 g2407 RC draloric g202 CECC40201-801 S2 G204 G206

    Untitled

    Abstract: No abstract text available
    Text: G200 www.vishay.com Vishay Draloric Axial Vitreous Wirewound Resistors FEATURES • Complete welded construction • Vitreous coating • Enhanced humidity protection • TCR 100 ppm/K to 180 ppm/K • CECC 40201-801 approved version available • Pure tin plating provides compatibility with lead Pb -free


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    PDF G220414 G240719 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MIL-T-16366

    Abstract: RBS 2216 K975 K974 RH717 K972 UL 486A torque value data RJ9711 RH727 ERG-2001
    Text: ang part 4 Stakon.qxd 8/18/05 3:32 PM Page 97 Terminal Products and Tools Terminals Overview . 98 - 101 Nylon Insulated Ring. 102 - 106 Vinyl Insulated Ring . 107 - 109


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    PDF RA2573M. RA250M) E9809 MIL-T-16366 RBS 2216 K975 K974 RH717 K972 UL 486A torque value data RJ9711 RH727 ERG-2001

    schlumberger 4002

    Abstract: 2N6768 E7A2 2N6767 MFL 23-6
    Text: FAIRCHILD SEMICONDUCTOR fi4 D e J 34L,Tb74 0027fl20 4 jf 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 78 20 D „ 2N6767/2N6768 N-Channel Power M O SFETs, 15 A, 350 V/400 V m hm hm bm A Schlum berger Com pany Power And Discrete Division T-39-13 Description These devices are n-channel, enhancement mode, power


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    PDF 2N6767/2N6768 T-39-13 T0-204AA 2N6767 2N6768 2N6768 E7A24 schlumberger 4002 E7A2 MFL 23-6

    Z80B-CPU

    Abstract: Z8400BPS Z8400APS Z80BCPU Z8400A-PS Z8400A Z80h Z80B CPU z80a-cpu TDA 4100
    Text: 28400 Z80*CPU C entral Processing Unit P roduct S pecification Septem ber 1983 F e a tu re s • The instruction set contains 158 instructions. The 78 instructions of the 8080A are included as a subset; 8080A software com ­ patibility is m aintained. ■ Eight MHz, 6 MHz, 4 MHz an d 2.5 MHz


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    PDF Z8400A Z8400 Z8400B 40-pin) Z80B-CPU Z8400BPS Z8400APS Z80BCPU Z8400A-PS Z80h Z80B CPU z80a-cpu TDA 4100

    ding dong generator

    Abstract: ding dong brahms lullaby happy birthday happy birthday to you trio melody ding dong santa claus is coming to town SD995 TR11
    Text: Z J Super Device SD995 SD995 Dual Tone Melody Generator Features 1.3V to 3.3V power supply. Lower power consumption. 256 notes memory. 14 tempos available. 15 beats available. 27 notes including rest available. RC oscillator with one external resistor. On chip envelope modulation.


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    PDF SD995 SD995 995-C ding dong generator ding dong brahms lullaby happy birthday happy birthday to you trio melody ding dong santa claus is coming to town TR11

    Cyrix FasMath

    Abstract: CX-83S87 cyrix 386SX fcom 7c DATA SHEET FOR OL 107 E SOLDER PEST FasMath 83D87 386SX CIRCUIT diagram 80386 83S87
    Text: 83S87 User’s Manual High Performance CMOS Math Processor CYRIX CORP 3bE » H SSñ^ñn □ GQDlB'ì fi • T—49—1 2-05 FasMath CX-83S87 User's Manual January, 1990 o * P.O. Box 850118 Richardson, TX 76085-0118 CYR CYRIX CORP 3bE D ■ 2 5 ö t filici □ □ D D I M Q


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    PDF QQD13tà CX-83S87 X-/V9-12-05 16-bit 16-blt 16-bltlnt -64-bit 64-blt 89ABCDE Cyrix FasMath cyrix 386SX fcom 7c DATA SHEET FOR OL 107 E SOLDER PEST FasMath 83D87 386SX CIRCUIT diagram 80386 83S87

    Untitled

    Abstract: No abstract text available
    Text: bOE D I fl235b05 QD5G42Ô 7b7 SIEMENS S IC K N S ISIEG A K 7 -iE N 6 e LLSC H AF Dual Power Operational Amplifier TCA 2465 Bipolar 1C Features • High output peak current of twice 2.5 A • Twice 2.0 A output peak current for TCA 2465 G • Large supply voltage range up to 42 V


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    PDF fl235b05 QD5G42Ã P-DIP-16 Q67000-A8109 Q67000-A8110 Q67000-A8334 P-DSO-20-1 235bG5

    ha 1457 w

    Abstract: No abstract text available
    Text: .605 17.4mm R E V ISIO N S D E S IG N E D FO R U SE W ITH R G 4 0 5 /U S E M I - R I G I D CABLE ENTRY .555 (14.1mm) CABLE D IA M E T E R CONTACT .0 6 7 5 .0 2 0 9 .125 (3.2mm) MAX PANEL -U .120 / 1—^ (3.0mm) J V W 7 _ Fio. 250 1 0 7 . .010 H&Hzl


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    PDF

    TLO 741

    Abstract: ic tlo 741 LTLW
    Text: A dvanced P roduct Information Multi-Gigabit Interconnect Chip VSC7214 Features • 4 AN SI X 3 T 1 1 Compatible Fibre Channel Trans­ ceivers Deskewing o f +/- 2 bits Cable Skew at the Receiver On Chip Clock M ultiplier Generates Baud Rate Clock • Over 8 Gb/s Duplex Data Rate


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    PDF VSC7214 8B/10B 160-Pin VSC7214 TLO 741 ic tlo 741 LTLW

    BAY46

    Abstract: BAY44 Diode BAY 55 BAY45 Diode BAY 46 Q60201-Y46 Q60201-Y45 BAY 45 Q60201-Y44
    Text: S ilizium -U niversaldio den m it niedrigem S p errstrom BAY 44 BAY 45 -BAY 46 Die Silizium -Dioden BAY 44, BAY 45 und BAY 46 im Glasgehäuse 51 A2 DIN 41880 D O -7 ,


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    PDF Q60201-Y44 Q60201-Y45 Q60201-Y46 BAY46 BAY44 Diode BAY 55 BAY45 Diode BAY 46 Q60201-Y46 Q60201-Y45 BAY 45 Q60201-Y44

    BD 2135

    Abstract: 640N INT184 MSM63184B MSM63188 MSM63P180 QFP128-P-1420-0
    Text: E2E0042-18-95 O K I Semiconductor MSM6 3 1 8 4 B sve,5ion:^ 1998 4-Bit Microcontroller with Built-in 640-Dot Matrix LCD Drivers, Operating at 0.9 V Min. G EN E R A L DESCRIPTION The MSM63184B is a CMOS 4-bit microcontroller with built-in 640-dot matrix LCD drivers and


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    PDF E2E0042-18-95 MSM63184B 640-Dot MSM63184B M6318x OLMS-63K nX-4/250. BD 2135 640N INT184 MSM63188 MSM63P180 QFP128-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: IRF750A A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


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    PDF IRF750A O-220

    Untitled

    Abstract: No abstract text available
    Text: IRFP350 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


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    PDF IRFP350