design ideas
Abstract: FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE
Text: A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol
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FMMT591A
-FMMT491A
D-81541
TX75248,
design ideas
FMMT591A
91A SOT23
FMMT491A
TS16949
ZETEX complementary transistor PRODUCT LINE
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FZT491A
Abstract: FZT591A transistor marking 2A H DSA003675
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE sat = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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OT223
FZT591A
FZT491A
-100mA
-500mA
-20mA*
-100mA*
-50mA*
FZT491A
FZT591A
transistor marking 2A H
DSA003675
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91A SOT23
Abstract: design ideas FMMT591 FMMT491A TS16949
Text: A Product Line of Diodes Incorporated FMMT591 SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol VCBO
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FMMT591
-FMMT491A
D-81541
TX75248,
91A SOT23
design ideas
FMMT591
FMMT491A
TS16949
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up2518
Abstract: UP2518G-AE3-R
Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)
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UP2518
UP2518L
UP2518G
UP2518L-AE3-R
UP2518-AE3-R
UP2518G-AE3-R
OT-23
QW-R206-083
up2518
UP2518G-AE3-R
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up2518
Abstract: UP2518-AE3-6-R UP2518L-AE3-6-R
Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP EPITAXIAL SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)
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UP2518
OT-23
UP2518L
UP2518-AE3-6-R
UP2518L-AE3-6-R
QW-R206-083
up2518
UP2518-AE3-6-R
UP2518L-AE3-6-R
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ZXTN07012EFF
Abstract: ZXTP07012EFF ZXTP07012EFFTA
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
ZXTN07012EFF
ZXTP07012EFF
ZXTP07012EFFTA
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Untitled
Abstract: No abstract text available
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
D-81541
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.
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FCX718
-50mA
-10mA
-50mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance. RCE sat 67mÙ at 3A.
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FCX1149A
-100mA
-10mA
-50mA,
50MHz
-40mA
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ZXTP2025
Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to
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ZXTP2025F
ZXTN2031F
ZXTP2025
zxtp2025f
marking 12W SOT23
zxtp2025fta
marking 312 SOT23 zetex
ZXTN2031F
ZXTN2031
mosfet marking 12W
12W MARKING sot23
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ZXTN25012EFH
Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to
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ZXTP25012EFH
-65mV
ZXTN25012EFH
D-81541
ZXTN25012EFH
ZXTP25012EFH
TS16949
ZXTP25012EFHTA
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zxtp25020cfh
Abstract: No abstract text available
Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to
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ZXTP25020CFH
-55mV
ZXTN25020CFH
D-81541
zxtp25020cfh
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up2518
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES *Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)
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UP2518
UP2518L-AE3-R
UP2518G-AE3-R
OT-23
QW-R206-083
up2518
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE sat 78mÙ at 4.5A.
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FCX1053A
100mA
100MHz
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TRANSISTOR MARKING 1d8
Abstract: TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA
Text: ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to
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ZXTP19020DFF
OT23F,
ZXTN19020DFF
D-81541
TRANSISTOR MARKING 1d8
TS16949
ZXTN19020DFF
ZXTP19020DFF
ZXTP19020DFFTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to
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ZXTP2025F
ZXTN2031F
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)
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UP2518
OT-23
UP2518L
UP2518-AE3-R
UP2518L-AE3-R
OT-23
UP2518L-AE3-R
QW-R206-083
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V
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OCR Scan
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TSM4410
4410C
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features
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TSM4410
4410C
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TSM4410
Abstract: TSM4410CS D0351
Text: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain
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TSM4410
TSM4410CS
TSM4410
D0351
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034-AA
Abstract: tic 136
Text: SIPM OS N Channel M O S F E T B S P 89 Preliminary Data • S IP M O S - enhancem en t m ode • D rain-sou rce voltag e Vfcs = 240V • C o n tin u o u s drain current l D = 0.34A • D rain-sou rce o n -resistan ce A dston = 6.0CÎ • Total pow er d issip atio n
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67002-S652
034-AA
tic 136
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tic 223
Abstract: No abstract text available
Text: B S P 149 SIPM OS N Channel M O S F E T Preliminary Data • S IP M O S - dep letio n m ode • D rain-sou rce voltage Vfcs= 200V • C o n tin u o u s drain current /„ = .44A • D rain-sou rce o n-resistance ftos on = 3.50 Pn = 1 ,5W • Total pow er d issip ation
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67000-S071
00A/f/s
00A//JS
tic 223
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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FMMT591A
350mi2
FMMT491A
-100m
-50mA,
100MHz
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transistor marking ra
Abstract: No abstract text available
Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)
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MMBF170LT1
OT-23
T0-236AB)
transistor marking ra
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