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    RD01MU Price and Stock

    Mitsubishi Electric RD01MUS1-T113

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,600MA I(D),SOT-89 (Also Known As: RD01MUS1)
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    Quest Components RD01MUS1-T113 1,600
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    RD01MUS1-T113 1,600
    • 1 $3.456
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    • 100 $3.456
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    RD01MUS1-T113 339
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    RD01MUS1-T113 339
    • 1 $3.456
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    • 100 $1.728
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    Mitsubishi Electric RD01MUS2B-T513

    RF-MOSFET 7.2V 527MHz 1.6W SOT89-Pkg. - Gate Prot
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    GLYN GmbH & Co. KG RD01MUS2B-T513 3,000
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    Win Source Electronics RD01MUS2B-T513 250,000
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    • 100 $0.5492
    • 1000 $0.3662
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    Mitsubishi Electric RD01MUS2-501

    RF-MOSFET 7.2V 520MHz 0.8W SOT89
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    GLYN GmbH & Co. KG RD01MUS2-501 95
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    Mitsubishi Electric RD01MUS2B-T113

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RD01MUS2B-T113 28,585
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    • 100 $0.813
    • 1000 $0.542
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    Mitsubishi Electric RD01MUS2-T513

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    Win Source Electronics RD01MUS2-T513 20,200
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    • 100 $0.551
    • 1000 $0.368
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    RD01MU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD01MUS1 Mitsubishi RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Original PDF
    RD01MUS1 Mitsubishi Silicon MOSFET Power Transistor 520 MHz, 1 W Original PDF
    RD01MUS2 Mitsubishi Silicon MOSFET Power Transistor 520MHz,1W Original PDF

    RD01MU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RD01MUS1-101

    Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems PDF

    GRM1882C1H100JA01D

    Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V


    Original     		AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D PDF

    RD01MUS1

    Abstract: adj 2576
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V


    Original     		AN-UHF-060-A RD01MUS1 RD01MUS1: 135MHz 100mA 527MHz 0mm/50 AN-UHF-060 adj 2576 PDF

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 PDF

    RD01MUS2

    Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems PDF

    RD07MVS1

    Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency


    Original     		AN-900-006 RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735 PDF

    GP 809 DIODE

    Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE PDF

    taiyosya

    Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.


    Original     		AN-UHF-085-A RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 taiyosya grm188r11h RD01MUS2 GRM1882 GRM2162C1H GRM1882C1H GRM2162C GRM2162C1H470GD01E PDF

    RD01MUS1

    Abstract: RD07MVS1B
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.


    Original     		AN-900-028-A RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz RD01MUS1 PDF

    RD07MVS1

    Abstract: RD01MUS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data


    Original     		AN-900-008 RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1 PDF

    equivalent transistor c 243

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz 48MAX 53MAX equivalent transistor c 243 PDF

    2779, transistor

    Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547 PDF

    RD01MUS1

    Abstract: 180PF
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019-B Date : 9th Jan. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 RF characteristics data


    Original     		AN-UHF-019-B RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 136MHz) 155MHz 155MHz) 175MHz 180PF PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION OUTLINE DRAWING 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		RD01MUS2 520MHz 520MHz RD01MUS2 PDF

    5139 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 Oct2011 5139 mosfet PDF

    RD01MUS2

    Abstract: 627 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz Oct2011 627 DIODE PDF

    RD01MUS1-101

    Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 RD01MSU1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor PDF

    GRM1882C1H

    Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz


    Original     		AN-UHF-087-A RD01MUS2 450-527MHz RD01MUS2: RD01MUS2 GRM1882C1H GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A PDF

    RD01MUS2

    Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m PDF

    RD01MUS1-101

    Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 fet 547 2779, transistor RD01MSU1 PDF

    RD01MUS1

    Abstract: D 1556 RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.


    Original     		AN-900-008-A RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1 D 1556 PDF

    amp 827 578

    Abstract: 2K291 RD01MUS1 RD07MVS1 amp 827 578 3 pin
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013-A Date : 11th Nov. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics


    Original     		AN-VHF-013-A RD01MUS1 RD07MVS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz amp 827 578 2K291 RD01MUS1 amp 827 578 3 pin PDF

    transistor 1971 mitsubishi

    Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994 PDF

    transistor 16933

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		25th/Nov. RD01MUS1 520MHz RD01MUS1 520MHz 25deg transistor 16933 PDF