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    RD01MUS2B Search Results

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    RD01MUS2B Price and Stock

    Mitsubishi Electric RD01MUS2B-T513

    RF-MOSFET 7.2V 527MHz 1.6W SOT89-Pkg. - Gate Prot
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    GLYN GmbH & Co. KG RD01MUS2B-T513 3,000
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    Win Source Electronics RD01MUS2B-T513 127,750
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    • 100 $0.542
    • 1000 $0.362
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    Mitsubishi Electric RD01MUS2B-T113

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RD01MUS2B-T113 28,585
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    • 100 $0.813
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    RD01MUS2B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP 809 DIODE

    Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE