mitsubishi top marking
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
mitsubishi top marking
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micro strip line
Abstract: RD09MUP2
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a (b) 7.0+/-0.2 0.2+/-0.05 RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
micro strip line
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 0.65+/-0.2 (b) RD09MUP2 is a MOS FET type transistor
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
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TRANSISTOR D 1765 320
Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 320
RF high POWER TRANSISTOR
TRANSISTOR D 1765
marking 929 922
mitsubishi top side marking
1776
ER48
transistor mosfet 4425
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RD09MUP2
Abstract: TRANSISTOR D 1765 720 L 0619 1788
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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Original
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
TRANSISTOR D 1765 720
L 0619
1788
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PDF
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TRANSISTOR D 1765
Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
Oct2011
TRANSISTOR D 1765
transistor mosfet 4425
1776
48T08
TRANSISTOR D 1765 720
T72 MARKING
1788
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PDF
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RD09MUP2
Abstract: No abstract text available
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-UHF-072-B Date: 6th Feb. 2006 Rev.date : 22th Jun. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data
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AN-UHF-072-B
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
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555 application note
Abstract: RD09MUP2 ER48
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072-A Date: 6th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data
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AN-UHF-072-A
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
ER48
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RD100HHF1
Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V
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30-900MHz
H-CR624-E
KI-0612
RD100HHF1
RD70HVF1
rd16hhf1
RD15HVF1
RD06HVF1
RD16HHF1 application notes
RD70HVF
RD70HHF1
RD01MUS2
RD06HHF1
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RD09MUP2
Abstract: 555 application note
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
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AN-UHF-072
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
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