B641
Abstract: HS128E08B HS128E08C HS128E08D HS128E08E HS128N08C HS128N08D HS128N08E
Text: 128MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and
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128MB
144Mb
HS128N08E
HS128N08D
HS128N08C
HS128N08B
HS128E08E
HS128E08D
HS128E08C
B641
HS128E08B
HS128E08C
HS128E08D
HS128E08E
HS128N08C
HS128N08D
HS128N08E
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HR256E16B
Abstract: HR256E16C HR256E16D HR256E16E HR256N16B HR256N16C HR256N16D HR256N16E
Text: 256MB RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.
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256MB
128Mb
144Mb
HR256N16E
HR256N16D
HR256N16C
HR256N16B
HR256E16E
HR256E16D
HR256E16C
HR256E16B
HR256E16C
HR256E16D
HR256E16E
HR256N16B
HR256N16C
HR256N16D
HR256N16E
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HR128E08B
Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
Text: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.
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128/144Mb
128Mb
144Mb
HR128N08E
HR128N08D
HR128N08C
HR128N08B
HR128E08E
HR128E08D
HR128E08C
HR128E08B
HR128E08C
HR128E08D
HR128E08E
HR128N08C
HR128N08D
HR128N08E
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144MB
Abstract: B641 High Connection Density
Text: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and
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128Mb
144Mb
HS064N04E
HS064N04D
HS064N04C
HS064N04B
HS064E04E
HS064E04D
HS064E04C
HS064E04B
144MB
B641
High Connection Density
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B-701
Abstract: a69 156
Text: 64MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.
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128/144Mb
128Mb
144Mb
HR064N04E
HR064N04D
HR064N04C
HR064N04B
HR064E04E
HR064E04D
HR064E04C
B-701
a69 156
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da53
Abstract: DB26
Text: 800/1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-06
da53
DB26
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da53
Abstract: DB26 DL0054 ycl dc 101
Text: 1066 MHz RDRAMâ 256/288 Mb 4Mx16/18x4i Advance Information Overview • The Rambus DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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4Mx16/18x4i)
DL-0119-010
da53
DB26
DL0054
ycl dc 101
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RDRAM Clock
Abstract: No abstract text available
Text: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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DL-0119-030
RDRAM Clock
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM 512/576 Mb 8Mx16/18x4i Advance Information Overview The 1066 MHz RDRAM is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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DL-0117-030
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da53
Abstract: DB26
Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any
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8Mx16/18x4i)
DL0117-010
da53
DB26
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PDF
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-050
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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128Mb
144Mb
HS032N02E
HS032N02D
HS032N02C
HS032N02B
HS032E02E
HS032E02D
HS032E02C
HS032E02B
Device marking code B12 B13 B14 B15 B16
MARKING b56
Device marking code B52
marking A78
a80 marking code
marking code B49
a64 marking code
A45 interface
marking code B38
HS032E02B
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HYR163240G-653
Abstract: HYR163240G-745 HYR163240G-840 HYR163240G-845 HYR166440G-653 HYR166440G-745 HYR183240G-653 HYR183240G-745 HYR183240G-840 HYR183240G-845
Text: HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx40G
HYR18xx40G
512MB,
256MB,
128MB,
HYR163240G-653
HYR163240G-745
HYR163240G-840
HYR163240G-845
HYR166440G-653
HYR166440G-745
HYR183240G-653
HYR183240G-745
HYR183240G-840
HYR183240G-845
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marking A26
Abstract: HYR1612830G-653 HYR1612830G-745 HYR1612830G-840 HYR1612830G-845 HYR1812820G-653 HYR1812820G-745 A52 LD
Text: HYR 16xx30G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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16xx30G/HYR
18xx20G
MB/144
256MB,
128MB,
marking A26
HYR1612830G-653
HYR1612830G-745
HYR1612830G-840
HYR1612830G-845
HYR1812820G-653
HYR1812820G-745
A52 LD
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marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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256MB
288Mb
HS256N08E
HS256N08D
HS256N08C
HS256N08B
HS256E08E
HS256E08D
HS256E08C
marking code B49
MARKING b56
marking A71
marking A46 B36
Device marking code B12 B13 B14 B15 B16
a80 marking code
a64 marking code
marking code B38
A45 interface
A77 marking
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MR18R0824
Abstract: No abstract text available
Text: MR16R0824 8 BM0 MR18R0824(8)BM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1a ver. 128/144Mbit RDRAMs(B-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)BM0 MR18R0824(8)BM0
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MR16R0824
MR18R0824
128/144Mbit
8Mx16)
128Mb
16K/32ms
8Mx18)
144Mb
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marking A26
Abstract: HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612 A52 LD
Text: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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16xx20G/HYR
18xx20G
256MB,
128MB,
marking A26
HYR1612820G-845
HYR1812820G-653
HYR1812820G-745
HYR1812820G-845
HYR1612820G-653
HYR1612820G-745
HYR1612820G-840
HYR1612
A52 LD
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siemens a55
Abstract: siemens A70 marking b28 siemens a57 siemens b38
Text: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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HYR16xx30/HYR18xx20G
128Mb/
144Mb
600MHz
800MHz
128MB,
HYR16xx30G/HYR18xx20G
siemens a55
siemens A70
marking b28
siemens a57
siemens b38
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MR16R0824AS0-CG6
Abstract: MR16R0828AS0-CG6 MARKING CODE B82
Text: Preliminary MR16R0824 8 AS0 Change History Version 1.0 (October 2000) - Preliminary - First copy. - Based on the 1.1ver. 128/144Mb RDRAMs(A-die) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 Preliminary MR16R0824(8)AS0 (8Mx16)*4(8)pcs Consumer RIMMTM Module based on 128Mb A-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0824
128/144Mb
8Mx16)
128Mb
16K/32ms
MR16R0824AS0-CG6
MR16R0828AS0-CG6
MARKING CODE B82
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H-840
Abstract: H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose
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256/288Mb
H-840
H-745
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288Mb
256/288Mb
600MHz
711MHz
800MHz
A23 851 diode
diode 910 b34
HYMR225616
HYMR26416
256MX16
H-745
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kmmr18r88c1-rk8
Abstract: rg6 f connector 750 B36
Text: KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)
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KMMR16R84
KMMR18R84
4/6/8/12/16d
128Mb
144Mb
127mm.
kmmr18r88c1-rk8
rg6 f connector
750 B36
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