2TZ11
Abstract: 2TZ21 2 TZ 11 relog 2tz11 relog 2 tz 21 2TZ61 RE LOG 6 TZ 61 RE LOG 2 TZ 11 zeitrelais relog
Text: Bedienungs anleitung Elektronische Zeitrelais 2 TZ 11 2 TZ 21 2 TZ 31 2 TZ 41 2 n 61 1. A l l g e m e i n e s Di e elektronischen Zeitrelais der R e i h e 2 TZ bereichs-Einfunktions-Zeitrelais Einsatz ln industriellen Steuerungen. Grundlage m i k r o e 1ektroniseher
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DOR-6518
2TZ11
2TZ21
2 TZ 11
relog 2tz11
relog 2 tz 21
2TZ61
RE LOG 6 TZ 61
RE LOG 2 TZ 11
zeitrelais
relog
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Untitled
Abstract: No abstract text available
Text: cP DS04-13103-5E FUJITSU DATA SHEET LINEAR IC 6-CHANNEL 8-BIT A/D CONVERTER MB4053 6-CHANNEL 8-BIT A/D CONVERTER SUBSYSTEM The Fujitsu MB4053 is 6-channel, 8-bit, single-slope A/D converter subsystem designed to be used in a microprocessor based data control system. This device provides the analog functions
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DS04-13103-5E
MB4053
MB4053
MB8840/50,
MBL8048,
MBL6801.
16-pin
DIP-16C-F02
374T75LI
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cxa1465as
Abstract: GXA1465AS HM-TR CXA1464AS G21H Vf20k 48 pins CXA1464AS YIO 98 ZU-J79 1465AS
Text: S O ± N = j - Y t \ s I C X A 1 4 6 4 A S / 1 4 6 5 A S IffflY /C /v + > ? ‘;WRGB -f > £ 7 1 - í X / B S Ü IE 4HE Œ CXA1464AS/1465AS Ì , N T S C ^ Ä # 7 - r U £ v a fe € ^ « k 3 i, RGB'f tÊ £ IchipK&flf LtzsU 4$ r a n s i t Ä i , h # y b t 7 , IÎ3 IfiiE $ |
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CXA1464AS/1465AS
CXA1464AS/1465AS
20MHz)
j92202b7x
CXA1464AS/CXA1465AS
48PIN
SDIP-48P-02
SDIP048-P-0600
42/COPPER
cxa1465as
GXA1465AS
HM-TR
CXA1464AS
G21H
Vf20k
48 pins CXA1464AS
YIO 98
ZU-J79
1465AS
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RE LOG 6 TZ 61
Abstract: No abstract text available
Text: ADVANCE MT58LC128K16/18G1 128K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • •
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MT58LC128K16/18G1
128Kx
100-Pin
RE LOG 6 TZ 61
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Untitled
Abstract: No abstract text available
Text: 64K X 32 Fusion Memory SYNCHRONOUS CACHE RAM FEATURES: . performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that
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IDT71F632
100-pin
IDT71F632
I/029
Z31/09
71F632
0023T20
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18F,
MT55L128L32F,
MT55L128L36F;
MT55L256V18F,
MT55L128V32F,
MT55L128V36F
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07K300
Abstract: 05K250 lucent technologies Erbium-Doped Fiber Amplifier lucent microelectronics pump laser 980 for APD bias high-voltage DS98-423LWP 1319PC photodiode pin 1319PA Lucent 1319
Text: Datasheet January 1999 m icr o e le ctro n ic s group Lucent Technologies Bell Labs Innovations 1319-Type High-Speed Lightwave Receiver Features l j|S B • High data rate capability: 2.5 Gbits/s ■ APD or PIN photodetector ■ Fully operational through the 1.3 pm to 1.55 pm
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1319-Type
termin5421
DS99-070LWP
DS97-106LWP)
07K300
05K250
lucent technologies Erbium-Doped Fiber Amplifier
lucent microelectronics pump laser 980
for APD bias high-voltage
DS98-423LWP
1319PC
photodiode pin
1319PA
Lucent 1319
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620T DIODE
Abstract: 620T
Text: FAST CMOS OCTAL BUS TRANSCEIVERS 3-STATE IDT54/74FCT620T/AT/CT IDT54/74FCT623T/AT/CT In te grate d D e vice T echnology, Inc. DESCRIPTION FEATURES: • • • • • • • • • • T h e ID T 5 4 /7 4 F C T 6 2 3 T /A T /C T is a n o n -in v e rtin g octal
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IDT54/74FCT620T/AT/CT
IDT54/74FCT623T/AT/CT
-15mA
MIL-STD-883,
IDT54/74FCT623T/AT/CT
E5771
IDT54/74FCT620/623T/AT/CT
620AT
623AT
620T DIODE
620T
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SC1741
Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
Text: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2
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SIP10)
801BX100)
Nd022-01
dd022-01
dd92l-01
SC1741
2SD2172
gy-80
DTA144EF
DTC123JF
DTA143ZF
2sc2062c
DTD143EF
DTD114EF
DTC144EL
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC64K16/18G1 64K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • •
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MT58LC64K16/18G1
100-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K SYNCHRONOUS SRAM • • • • • • • • • Fast access time: 7ns Fast OE# access time: 5ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby
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MT58LC128K16C6
100-lead
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns
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MT55L512L18F,
MT55L256L32F,
MT55L256L36F;
MT55L512V18F,
MT55L256V32F,
MT55L256V36F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P;
MT55L256V18P,
MT55L128V32P,
MT55L128V36P
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K32/36E1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES 100-Pin TQFP SA-1 # # # # # (fi it oí3Ss! í * ty=*(fi8S* „.ft
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MT58LC128K32/36E1
100-Pin
access/12ns
access/15ns
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DL05L
Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are
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2Kx32
16Kx32
256x16
R04cwxyz,
R06cwxyz
4D55c
DL05L
lm 739
dl051d
ODCSXE04
180 nm CMOS standard cell library AMI
DL021D
M91C360
ami 0.6 micron
micron37
ami equivalent gates
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K32/36G1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES * * U û. * Si S > (D N liJliJS S S S liJ o ifl_l>§LU O O O CO O
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MT58LC128K32/36G1
MT58LC128K32G1
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F24000
Abstract: RE LOG 6 TZ 61 ix1012
Text: iß National Semiconductor MF6 6th Order Switched Capacitor Butterworth Lowpass Filter General Description Features The MF6 is a versatile easy to use, precision 6th order Butterworth lowpass active filter. Switched capacitor tech niques eliminate external component requirements and al
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MF6-50)
MF6-100)
27rfoRi
b5G1124
F24000
RE LOG 6 TZ 61
ix1012
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PDF
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 256K x 18,128K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM • Q X /M f^ D I in Q T O T I M v D U l l O I MT58LC256K18B4, MT58LC128K32B4, MT58LC128K36B4 SRAM 3.3V Supply, Flow-Through and Burst FEATURES • • • • • • • • •
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MT58LC256K18B4,
MT58LC128K32B4,
MT58LC128K36B4
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I TECHNOLOGY, INC. MT58L256L18P, MT58L128L32P, MT58L128L36P; MT58L256V18P, MT58L128V32P, MT58L128V36P 4Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock a n d OE# access tim es • Single +3.3V +0.3V/-0.165V p o w er su p p ly V dd
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V V dd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • •
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D
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ne616
Abstract: SS 1800R TOKO 455KHz ceramic filter 2SA616 Ceramic filter 455khz NE615 SA616 SA616D SA616DK SA616N
Text: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system SA616 PIN CONFIGURATION DESCRIPTION The SA616 is a low-voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate
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SA616
20-lead
NE615.
SA616D
711003t,
00fl3ti70
ne616
SS 1800R
TOKO 455KHz ceramic filter
2SA616
Ceramic filter 455khz
NE615
SA616DK
SA616N
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •
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MT58L512L18F,
MT58L256L32F,
MT58L256L36F;
MT58L512V18F,
MT58L256V32F,
MT58L256V36F
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PDF
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256L18
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES H ig h frequency an d 100 p ercen t bu s utilization
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P;
MT55L256V18P,
MT55L128V32P,
MT55L128V36P
256L18
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