mosfet 300V 10A
Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Text: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M01N60
O-251
O-252
O-251/252
00A/S
mosfet 300V 10A
M01N60
mosfet 10V 10A
n channel mosfet
mosfet 10a 600v
2a 400v mosfet to-251
FAST RECOVERY DIODE 10A 400V
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Untitled
Abstract: No abstract text available
Text: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF4N60
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100v 20a fast recovery power diode
Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Text: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter
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LTP40N10
to175
100v 20a fast recovery power diode
Power MOSFET 50V 20A
MOSFET 40A 100V
100v 20a mosfet
N_CHANNEL MOSFET 100V MOSFET
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Untitled
Abstract: No abstract text available
Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB13N10
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Untitled
Abstract: No abstract text available
Text: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF2N60
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Untitled
Abstract: No abstract text available
Text: LZPF7N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF7N60
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mosfet 600V 20A
Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Text: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M02N60
O-251
O-252
O-251/252
O-220
00A/S
mosfet 600V 20A
M02N60
Mosfet 600V, 20A
TO 220 Package High current N CHANNEL MOSFET
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
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LTP120N06
Abstract: No abstract text available
Text: LTP120N06 N-Channel 60V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant
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LTP120N06
to150
LTP120N06
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Untitled
Abstract: No abstract text available
Text: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB30N20
tpv10
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AN569
Abstract: NTB30N20 NTB30N20T4
Text: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB30N20
NTB30N20/D
AN569
NTB30N20
NTB30N20T4
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Untitled
Abstract: No abstract text available
Text: NTB13N10 Advance Information Power MOSFET 13 Amps, 100 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 13 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V Fast Recovery Diode
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NTB13N10
tpv10
r14525
NTB13N10/D
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Power MOSFET 50V 20A
Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
Text: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant
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LTD35N10
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Power MOSFET 50V 20A
100V, 200 A MOSFET
N_CHANNEL MOSFET 100V MOSFET
MOSFET 40A 100V
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M04N60
Abstract: No abstract text available
Text: N Channel MOSFET M04N60 4.0A Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode TO-220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Continuous Drain Current
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M04N60
O-220
M04N60
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marking n10 fet
Abstract: NTD12N10
Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode
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NTD12N10
marking n10 fet
NTD12N10
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Untitled
Abstract: No abstract text available
Text: LTP95N07 N-Channel 75V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter BVDSS=75V ,
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LTP95N07
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35N15
Abstract: W35N15
Text: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB35N15
tpv10
35N15
W35N15
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AN569
Abstract: NTP35N15
Text: NTP35N15 Preferred Device Advance Information Power MOSFET 37 Amps, 150 Volts N–Channel TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 37 AMPERES 150 VOLTS 50 mΩ @ VGS = 10 V Fast Recovery Diode
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NTP35N15
tpv10
r14525
NTP35N15/D
AN569
NTP35N15
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Untitled
Abstract: No abstract text available
Text: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTP35N15
O-220
tpv10
NTP35N15/D
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Untitled
Abstract: No abstract text available
Text: NTP35N15 Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • 37 AMPERES 150 VOLTS 50 mW @ VGS = 10 V Fast Recovery Diode Avalanche Energy Specified
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NTP35N15
tpv10
NTP35N15/D
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M02N60B
Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Text: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated
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M02N60B
O-251/252
O-220
O-220-3L
M02N60B
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
mosfet 600V 20A
4470 mosfet
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NT6600
Abstract: nt 6600 G dpak-3 369D NTD6600N NTD6600NT4 NTD6600NT4G
Text: NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb−Free Package is Available
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NTD6600N
NTD6600N/D
NT6600
nt 6600 G
dpak-3
369D
NTD6600N
NTD6600NT4
NTD6600NT4G
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Amp. mosfet 1000 watt
Abstract: MOSFEt n channel for 26 volt 52 amp AN569 NTB52N10 NTB52N10T4 800mJ
Text: NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB52N10
NTB52N10/D
Amp. mosfet 1000 watt
MOSFEt n channel for 26 volt 52 amp
AN569
NTB52N10
NTB52N10T4
800mJ
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Untitled
Abstract: No abstract text available
Text: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTP35N15
O-220
tpv10
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35N15
Abstract: AN569 NTB35N15 NTB35N15T4 SMD310 rc motor speed control
Text: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTB35N15
tpv10
NTB35N15/D
35N15
AN569
NTB35N15
NTB35N15T4
SMD310
rc motor speed control
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