Untitled
Abstract: No abstract text available
Text: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction. Low Saturation Voltage IGBT Low VF Diode Bridge Rectifier
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SLA5222
SLA5222
SLA5222-DS
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode
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BYC10-600CT
BYC10-600CT
O220AB)
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode
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BYC10-600CT
O220AB)
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silicon rectifier diode
Abstract: NTE506 1400V Diode
Text: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: Maximum Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V
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NTE506
NTE506
500ns
silicon rectifier diode
1400V Diode
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode BYD17ZDLH THRU BYD17ZMLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Unit : mm Case : 1206 Halogen-free type Compliance to RoHS product GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction
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BYD17ZDLH
BYD17ZMLH
OD123
300uS
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NTE506
Abstract: No abstract text available
Text: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode in an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single
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NTE506
NTE506
500ns
500mA,
-250mA.
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Untitled
Abstract: No abstract text available
Text: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode is an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single
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NTE506
NTE506
500ns
500mA,
250mA.
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by228
Abstract: BY228 Diode 86-004
Text: BY228/13.BY228/15 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications High voltage rectifier Efficiency diode in horizontal deflection circuits High voltage rectifier Efficiency diode in horizontal deflection circuits
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BY228/13
BY228/15
BY228/13
140design
D-74025
24-Jun-98
by228
BY228 Diode
86-004
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GP-30DL
Abstract: 30DL
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS
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GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP-30DL
30DL
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BYV29G-600
Abstract: No abstract text available
Text: BYV29G-600 Ultrafast rectifier diode Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Ultrafast epitaxial rectifier diode in a SOT226 I2PAK plastic package 1.2 Features and benefits High thermal cycling performance
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BYV29G-600
OT226
BYV29G-600
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SOD87 marking code 7
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode BYD17ZDLH THRU BYD17ZJLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Unit : mm Case : 1206 Halogen-free type Lead free product, compliance to RoHs GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction
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BYD17ZDLH
BYD17ZJLH
OD123
300uS
SOD87 marking code 7
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode BYD17ZDLH THRU BYD17ZMLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Unit : mm Case : 1206 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction
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BYD17ZDLH
BYD17ZMLH
OD123
300uS
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diode case R-1
Abstract: 02 diode R-1 02 diode case R-1 DO-41-MINI
Text: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction
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G110DL
G110ML
30Amp
300uS
diode case R-1
02 diode R-1
02 diode case R-1
DO-41-MINI
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B2515L
Abstract: diode B2515L
Text: MBRB2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art
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MBRB2515L
B2515L
diode B2515L
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GP10DL
Abstract: DO-204AL
Text: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP10DL
GP10ML
50Amp
DO-204AL
DO-204AL
MIL-STD-750,
300uS
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Low forward voltage drop
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G110DL
G110ML
30Amp
300uS
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode SGC10DLH THRU SGC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 1206-S Unit : mm 1.50 Typ. Halogen-free type Compliance to RoHS product GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction
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SGC10DLH
SGC10MLH
1206-S
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GP20DL
Abstract: DO-204AC
Text: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP20DL
GP20ML
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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DO-204AC
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP20DLH
GP20MLH
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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BYV29X-600
Abstract: BYV29X600 BYV29X-600,127
Text: BYV29X-600 Rectifier diode ultrafast Rev. 02 — 4 September 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, epitaxial rectifier diode in a SOD113 TO-220F plastic package. 1.2 Features • Fast switching ■ Soft recovery characteristic
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BYV29X-600
OD113
O-220F)
BYV29X-600
BYV29X600
BYV29X-600,127
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BYV34X-600
Abstract: No abstract text available
Text: BYV34X-600 Dual rectifier diode ultrafast Rev. 01 — 13 September 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT186A TO-220F plastic package. 1.2 Features • Fast switching
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BYV34X-600
OT186A
O-220F)
BYV34X-600
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BYV34. Rectifier diode
Abstract: BYV34-600 BYV34-600,127
Text: BYV34-600 Dual rectifier diode ultrafast Rev. 01 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features • Fast switching
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BYV34-600
O-220AB)
BYV34-600
771-BYV34-600
BYV34. Rectifier diode
BYV34-600,127
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Untitled
Abstract: No abstract text available
Text: Illl SEME 1N4001CSM LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for High Reliability Applications 0.055 a = 1.02 ±0.10 max. (0.04 ± 0.004) SOT23 CERAMIC (CSM) Underside View
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1N4001CSM
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1N4001CSM
Abstract: No abstract text available
Text: mi 1N4001 CSM SEME LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for A= 1.02 ± 0.10 0.04 ± 0.004 1.40 (0.055) max. High Reliability Applications SOT23 CERAMIC (CSM)
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1N4001CSM
1N4001CSM
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