HN1D05FE
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 400 V, 0.1 A, ES6 |
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TBAW56
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 80 V, 0.215 A, SOT23 |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TK190U65Z
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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TK7R0E08QM
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB |
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