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    WD04

    Abstract: 24Blocks
    Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original
    PDF M5M29KB/T331AVP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331AVP 432-bit REJ03C0169 WD04 24Blocks

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    Abstract: No abstract text available
    Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original
    PDF M5M29KB/T331AVP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331AVP 432-bit REJ03C0169