WD04
Abstract: 24Blocks
Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO
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Original
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PDF
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M5M29KB/T331AVP
432-BIT
304-WORD
152-WORD
16-BIT)
M5M29KB/T331AVP
432-bit
REJ03C0169
WD04
24Blocks
|
Untitled
Abstract: No abstract text available
Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO
|
Original
|
PDF
|
M5M29KB/T331AVP
432-BIT
304-WORD
152-WORD
16-BIT)
M5M29KB/T331AVP
432-bit
REJ03C0169
|