IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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IRFIBC44LC
Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219
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IRF830A
Abstract: SiHF830A SiHF830A-E3
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
11-Mar-11
IRF830A
SiHF830A-E3
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IRF830AL
Abstract: IRF830AS SiHF830AL SiHF830AS SiHF830AS-E3
Text: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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IRF830AS,
IRF830AL,
SiHF830AS
SiHF830AL
2002/95/EC
O-263)
O-262)
11-Mar-11
IRF830AL
IRF830AS
SiHF830AS-E3
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
11-Mar-11
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MH 1004 SMPS
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MH 1004 SMPS
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF830B
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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81145
Abstract: IRF830A SiHF830A SiHF830A-E3 free transistor vishay S8114
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
O-220
18-Jul-08
81145
IRF830A
SiHF830A-E3
free transistor vishay
S8114
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Untitled
Abstract: No abstract text available
Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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IRF830,
SiHF830
2002/95/EC
O-220AB
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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Original
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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Original
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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S8114
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
O-220
O-220
IRF830merchantability,
12-Mar-07
S8114
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any circuit using irf830
Abstract: No abstract text available
Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRF830,
SiHF830
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
any circuit using irf830
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IRF830B
Abstract: No abstract text available
Text: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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IRF830B
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF830B
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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IRF830,
SiHF830
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRF830.831
Abstract: Irf830
Text: N-CHANNEL POWER MÛSFETS IRF830/831 FEATURES • • • • • • • Lower R ds On Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF830/831
IRF830
IRF831
IRF830.831
Irf830
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IRF830
Abstract: IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830
Text: N-CHANNEL POWER MOSFETS IRF830/831/832/833 FEATURES • • • • • • • TO-220 Lower Rqs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF830/831/832/833
O-220
IRF830
IRF831
IRF832
IRF833
IRF830.831
reliability irf830
diode on 832
IRF830-3
power MOSFET IRF830
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D84 TRANSISTOR
Abstract: IRF830 RF830 j01 relay
Text: IRF830,831 D84DR2,R1 FUT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 4.5 AMPERES 500, 450 VOLTS
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IRF830
P84DR2
100ns
TC-25Â
100IT
831/D84
530/CS4
D84 TRANSISTOR
RF830
j01 relay
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irf740 switching 3 phase motor driver
Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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power MOSFET IRF740 driver circuit
Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can
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