Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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PC2-4300
Abstract: PC2-5300 PC2-6400 SN13
Text: White Electronic Designs W3HG128M72AEF-Fx ADVANCED* 1GB – 128Mx72 DDR2 SDRAM FBDIMM, ECC FEATURES 240-pin DDR2 fully buffered, dual in-line memory module FBDIMM with ECC to detect and report channel errors to the host memory controller. VCC = VCCQ = +1.8V for DDR2 SDRAM
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W3HG128M72AEF-Fx
128Mx72
240-pin
PC2-6400*
PC2-5300,
PC2-4300
10-pair
PC2-4300
PC2-5300
PC2-6400
SN13
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BC900
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
256Mbx4
512Mx72
M395T5166AZ4
BC900
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Untitled
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
256Mbx4
512Mx72
M395T5166AZ4
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M395T5166AZ4
Abstract: DDR3 ECC SODIMM Fly-By Topology DFX SAMSUNG
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
M395T5166AZ4-CD5
Q1/2006
Q3/2006
M395T5166AZ4-CE6
Q2/2006
432KB
M395T5166AZ4
DDR3 ECC SODIMM Fly-By Topology
DFX SAMSUNG
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Untitled
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb C-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
256Mbx4
512Mx72
M395T5160CZ4
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PDF
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Untitled
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
256Mbx4
512Mx72
M395T5166AZ4
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M395T5160CZ4
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb C-die 60FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
60FBGA
256Mbx4
512Mx72
M395T5160CZ4
M395T5160CZ4
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K4T2G264QA
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
256Mbx4
512Mx72
M395T5166AZ4
K4T2G264QA
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IR Receiver Modules 170
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.70, Mar. 2006 Cover Page HYS72T64000HFN–3.7–A HYS72T128020HFN–3.7–A HYS72T256020HFN–3.7–A 240-Pin F ully-Buffered DDR2 SDRAM Modules DDR2 SDRAM FB-DIMM SDRAM RoHS Compliant Products Green Product High-Speed Differential Point-to-Point Link
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HYS72T64000HFN
HYS72T128020HFN
HYS72T256020HFN
240-Pin
08122004-IISJ-Y0AE
IR Receiver Modules 170
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M395T5160CZ4
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb C-die 60FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
60FBGA
256Mbx4
512Mx72
M395T5160CZ4
M395T5160CZ4
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Untitled
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
256Mbx4
512Mx72
M395T5166AZ4
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.01, Sep. 2005 HYS72T128001HF[A]–3.7–A HYS72T256021HF[A]–3.7–A 240-Pin F ully- Buffered DDR2 SDRAM Modules DDR2 SDRAM FB-DIMM SDRAM RoHS Compliant Green Product High-Speed Differential Point-to-Point Link Interface at 1.5 V Memory Products
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HYS72T128001HF
HYS72T256021HF
240-Pin
02182005-FIIN-VWUA
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INFINEON trace code label
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.10, Nov. 2005 HYS72T128001HF[N/A]–3.7–A HYS72T256021HF[N/A]–3.7–A 240-Pin F ully-Buffered DDR2 SDRAM Modules DDR2 SDRAM FB-DIMM SDRAM RoHS Compliant Green Product High-Speed Differential Point-to-Point Link Interface at 1.5 V Memory Products
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HYS72T128001HF
HYS72T256021HF
240-Pin
02182005-FIIN-VWUA
INFINEON trace code label
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K4T1G044QD
Abstract: No abstract text available
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb D-die 60FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
60FBGA
256Mbx4
512Mx72
M395T5160DZ4
K4T1G044QD
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M395T5160QZ4
Abstract: M395T5663QZ4-CD56/E66/F76/E76
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
60FBGA
256Mbx4
512Mx72
M395T5160QZ4
M395T5160QZ4
M395T5663QZ4-CD56/E66/F76/E76
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SN10
Abstract: SN13 "Raw Card J" DDR DIMM 512m non-ecc SPD
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that isolates the DDR2
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240pin
1240pin
SN10
SN13
"Raw Card J"
DDR DIMM 512m non-ecc SPD
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HYMP351F72AMP4D2-C4
Abstract: A13A dram card 60 SN10 SN13 hymp351f72amp4d2 DDR DIMM 512m non-ecc SPD DDR2 DIMM
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP351F72AMP4
HYMP351F72AMP4D2-C4
A13A
dram card 60
SN10
SN13
hymp351f72amp4d2
DDR DIMM 512m non-ecc SPD
DDR2 DIMM
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PC2-4200F-444
Abstract: transistor fp 1016 TAG 9148 HYS72T256020hfn DDR2 pcb layout HYS72T
Text: Data Sheet, Rev. 1.41, Jan. 2006 Cover Page HYS72T64000HF[A/N]–[3.7/3S]–A HYS72T128020HF[A/N]–[3.7/3S]–A HYS72T256020HF[A/N]–[3.7/3S]–A 240-Pin F ully-Buffered DDR2 SDRAM Modules DDR2 SDRAM FB-DIMM SDRAM RoHS Compliant Products Green Product High-Speed Differential Point-to-Point Link
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HYS72T64000HF
HYS72T128020HF
HYS72T256020HF
240-Pin
DDR2-800
DDR2-667
DDR2-533
DDR2-400
08122004-IISJ-Y0AE
PC2-4200F-444
transistor fp 1016
TAG 9148
HYS72T256020hfn
DDR2 pcb layout
HYS72T
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ddr2 667
Abstract: SA1137 trace code micron label MT9HTF12872F
Text: Preliminary‡ 240-Pin 512MB, 1GB DDR2 SDRAM FBDIMM SR, FB, x72 Features DDR2 SDRAM FBDIMM MT9HTF6472F – 512MB MT9HTF12872F – 1GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered, dual in-line memory
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240-Pin
512MB,
MT9HTF6472F
512MB
MT9HTF12872F
PC2-4200
PC2-5300
10-pair
14-pair
ddr2 667
SA1137
trace code micron label
MT9HTF12872F
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M395T5163FB4
Abstract: No abstract text available
Text: Rev. 1.0, Jul. 2010 M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin Fully Buffered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M395T2863FB4
M395T5663FB4
M395T5160FB4
M395T5163FB4
240pin
128Mbx8
512Mx72
M395T5163FB4
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Untitled
Abstract: No abstract text available
Text: 1GB x72, ECC, SR 240-Pin DDR3 SDRAM UDIMM Features DDR3 SDRAM UDIMM MT9JSF12872A – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • DDR3 functionality and operations supported as defined in the component data sheet
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240-Pin
MT9JSF12872A
240-pin,
PC3-12800,
PC3-10600,
PC3-8500,
PC3-6400
09005aef8360c8e6/Source:
09005aef8360c857
JSF9C128x72AZ
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HYMP151F72CP4
Abstract: HYMP125F72CP8D3 HYMP151F72CP4D3
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP151F72CP4
HYMP125F72CP8D3
HYMP151F72CP4D3
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Untitled
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HMP151F7EFR4C
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