power BJT PNP
Abstract: BJT pnp 45V vertical mosfet
Text: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3
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AN001
power BJT PNP
BJT pnp 45V
vertical mosfet
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mosfet 23 Tsop-6
Abstract: IRLML2244TR power MOSFET reliability report TSOP-6 Marking IRLML2244 marking 43A sot23 MOSFET reliability report Cross Reference power MOSFET IRLMS6802TRPBF P-channel HEXFET Power MOSFET
Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: IRLMS6802TRPBF Description: -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 Micro 6 package Support Docs: Datasheet Spice File Saber File Reliability Report Cross Reference IR Part #
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IRLMS6802TRPBF
IRLTS2242TRPBF
IRLML2244TRPBF
OT-23
IRLMS6802TRPBF
IRLMS6802TR
mosfet 23 Tsop-6
IRLML2244TR
power MOSFET reliability report
TSOP-6 Marking
IRLML2244
marking 43A sot23
MOSFET reliability report
Cross Reference power MOSFET
P-channel HEXFET Power MOSFET
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9544 transistor
Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
assIRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
IRG4BC30UD
9544 transistor
TRANSISTOR 9642
IRG4PC50U
irg4ph50ud
igbt failure
IRG4PC40UD2
HTGB
IRGPH60UD2
IRGBC20FD
rectifier IGBT
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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IRF P-Channel FET 100v
Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
Text: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient
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IRFG5210
MO-036AB
IRF P-Channel FET 100v
68A diode
IR 200V P-Channel fets
k 68a
irf P-Channel MOSFET audio
IRFG5210
4.5v to 100v input regulator
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This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988.
AR346.
AN1107.
This article
vmil120ft
acrian RF POWER TRANSISTOR
VMIL20FT
F2012 mosfet
acrian RF MOSFET
AR346
acrian RF MOSFET vmil40ft
VMIL40FT
n-channel enhancement mode vmos power fet
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AAT2402
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT2402M/2402S SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2402M/ 2402S is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD
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AAT2402M/2402S
AAT2402M/
2402S
AAT2402M)
AAT2402S)
AAT2402
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Untitled
Abstract: No abstract text available
Text: TPD2007F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from
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TPD2007F
TPD2007F
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TPD2007F
Abstract: No abstract text available
Text: TPD2007F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from
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TPD2007F
TPD2007F
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HIGH POWER MOSFET TOSHIBA
Abstract: marking code c 9 toshiba TPD2007F
Text: TPD2007F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from
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TPD2007F
TPD2007F
HIGH POWER MOSFET TOSHIBA
marking code c 9 toshiba
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AN-999
Abstract: No abstract text available
Text: Application Notes AN-999 International Rectifier’s Total Dose Radiation Hardness Assurance RHA Test Program For many years, IR has been the leader in radiation hardened MOSFETs. The design and processing of these devices has been carefully planned and
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AN-999
MIL-PRF-19500
300Krad
600Krad
AN-999
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2N2222A bjt
Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
Text: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1
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AN-1067
AN-937.
AN-944.
AN-936.
2N2222A bjt
74 standard TTL
bjt 2n2222a
ttl logic gates
IRHLUB7970Z4
TTL logic gate
Drive Base BJT
IRHLUB770Z4
mosfet p channel irf
LM139 APPLICATION
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Untitled
Abstract: No abstract text available
Text: TPD1048F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1048F Low-Side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1048F is a monolithic power IC intended for low-side load switching applications. The output has a vertical MOSFET,
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TPD1048F
TPD1048F
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT2400/2401 SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2400/ 2401 is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD panels
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AAT2400/2401
AAT2400/
AAT2400)
AAT2401)
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Untitled
Abstract: No abstract text available
Text: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRM9140D,
FRM9140R,
FRM9140H
-100V,
300S1
O-204AA
100KRAD
300KRAD
1000KRAD
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Untitled
Abstract: No abstract text available
Text: yw us FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRK160D,
FRK160R,
FRK160H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AE
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Untitled
Abstract: No abstract text available
Text: yw us FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRK9260D,
FRK9260R,
FRK9260H
-200V,
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.720Q. TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRM9240D,
FRM9240R,
FRM9240H
-200V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package TO-204AA • 14A, 100V, RDS on = 0.180£i • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRM130D,
FRM130R,
FRM130H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
has45
O-204AA
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PDF
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9437B
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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IRFG5110
IRFG5110
I-222
9437B
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International
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IRFG5110
IRFG5110
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PDF
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Untitled
Abstract: No abstract text available
Text: tyvvys S FRM240D, FRM240R, FRM240H S e m ico n d ucto r y y 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 16A, 200V, RDS on = 0.24S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts •
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FRM240D,
FRM240R,
FRM240H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AA
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PDF
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Untitled
Abstract: No abstract text available
Text: tyvvys S FRM140D, FRM140R, FRM140H S e m ico n d ucto r y y 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 100V, RDS on = 0.130S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRM140D,
FRM140R,
FRM140H
130S1
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AA
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PDF
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Untitled
Abstract: No abstract text available
Text: FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 30A, -100V, RDS on = 0.095S1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRE9160D,
FRE9160R,
FRE9160H
-100V,
095S1
O-258AA
100KRAD
300KRAD
1000KRAD
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PDF
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