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    RESISTANCE ARRAY SMD Search Results

    RESISTANCE ARRAY SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    RESISTANCE ARRAY SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TMS320C6418 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS241D August 2004 − Revised January 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments


    Original     		PDF TMS320C6418 SPRS241D SPRS241C

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI I HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |im Process (Leff= 0.6 |im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HX6356 1x106rad 1x101 36-Lead 4551fl72 6G638