RT5N431C
Abstract: RT5N431
Text: RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N431C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）
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RT5N431C
RT5N431C
JEITASC-59
RT5N431
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RT5P141C
Abstract: No abstract text available
Text: RT5P141C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5P141C
RT5P141C
JEITASC-59
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RT5N141C
Abstract: No abstract text available
Text: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N141C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）
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RT5N141C
RT5N141C
JEITASC-59
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RT5P430C
Abstract: rt5p430
Text: PRELIMINARY RT5P430C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P430C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N430C. 0.5 1.5 0.5 2.9 1.90 0.95 0.95
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RT5P430C
RT5P430C
RT5N430C.
SC-59
rt5p430
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RT5P230C
Abstract: RT5N230C
Text: PRELIMINARY RT5P230C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P230C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N230C. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9
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RT5P230C
RT5P230C
RT5N230C.
JEITASC-59
RT5N230C
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1NBA
Abstract: resistor PT-200
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E o—V W 2.8 + 0.2 1.5 R i = 1 0 k i2 Rl 0.65i8;is •
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OCR Scan
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1987M
1NBA
resistor PT-200
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H100I
Abstract: marking IAY
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z
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OCR Scan
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1987M
H100I
marking IAY
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PDF
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24v 5a smps
Abstract: 24V 10A SMPS SMPS 24V MAX1999 ultrasonic pulse generator kit SMPS CIRCUIT DIAGRAM 5V 20A 12v 5a smps 24v smps computer smps circuit MAX1777
Text: 19-2187; Rev 0; 4/02 High-Efficiency, Quad Output, Main PowerSupply Controllers for Notebook Computers Applications Features ♦ No Current-Sense Resistor Needed MAX1999 ♦ Accurate Current Sense with Current-Sense Resistor (MAX1777/MAX1977) ♦ 1.5% Output Voltage Accuracy
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MAX1999)
MAX1777/MAX1977)
100mA
100ns
25kHz
MAX1777EEI
200kHz/300kHin
MAX1777/MAX1977/MAX1999
24v 5a smps
24V 10A SMPS
SMPS 24V
MAX1999
ultrasonic pulse generator kit
SMPS CIRCUIT DIAGRAM 5V 20A
12v 5a smps
24v smps
computer smps circuit
MAX1777
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L4Z marking
Abstract: marking M61 marking M63
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E B O—v w 2.8 ± 0.2 0.65ig;i5 1.5 • 3 R i = 4 7 k i2
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1987M
L4Z marking
marking M61
marking M63
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5v4 g
Abstract: No abstract text available
Text: www.eLED.com T-1 3/4 5mm RESISTOR LED Package Dimensions LAMPS E53GD5V GREEN E53ID5V HIGH EFFICIENCY RED E53SGD5V SUPER BRIGHT GREEN E53SRD5V SUPER BRIGHT RED E53YD5V YELLOW Features 1.5 VOLT SERIES IN T-1 3/4 PACKAGES. 2.INTEGRAL CURRENT LIMITING RESISTOR.
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E53GD5V
E53ID5V
E53SGD5V
E53SRD5V
E53YD5V
EA0193
SEP/02/2001
E53-5V-2/4
5v4 g
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FN 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E 2.8 + 0.2 R t = 1 0 kn o— A /V V Ri 0.65 I g ls 1.5
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1987M
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L5 marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •
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1987M
L5 marking
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Untitled
Abstract: No abstract text available
Text: Mounting Clip FEATURES • Prevents severe vibration or mechanical shock to resistor • Increases resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis
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30ppm/
100ppm/
200ppm/
3CJ10K
MIL-R-26
1-866-9-OHMITE
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L66 marking
Abstract: IR 2137 IC TC-2137 marking L64
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI F4Z M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in TYPE 2 .8 ± 0.2 B 1.5 O—W V Ri = 22 k£2 Ri 3 - OE
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10-IR
1987M
L66 marking
IR 2137 IC
TC-2137
marking L64
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PDF
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Untitled
Abstract: No abstract text available
Text: Mounting Clip • Prevent severe vibration or mechanical shock to resistor • Increase resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis surface with machine
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30ppm/
100ppm/
200ppm/
3CJ10K
MIL-R-26
1-866-9-OHMITE
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PDF
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L4Z marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR ' FA1L4Z ‘Æ à i f ' MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE D IM E N SIO N S • in millimeters Resistor Built-in TYPE 2.8+0.2 o—V A — 1.5 Rl • Ri = 4 7 k fì Complementary to F N 1L4Z
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TC-2117
1987M
L4Z marking
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240-VA
Abstract: eddy probe driver circuit diagram
Text: ACS760ELF-20B 240 V*A Protection IC with Integrated Hot-Swap Gate Driver and Internal 1.5 mΩ Hall Effect Based Current Monitor Features and Benefits Description ▪ Fully integrated analog current sensing without the need for a sense resistor ▪ 1.5 mΩ internal conductor resistance
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ACS760ELF-20B
ACS760
240-VA
eddy probe driver circuit diagram
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UNR1121
Abstract: UNR1122 UNR1123 UNR1124 UNR112X UNR112Y
Text: Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 R0.9 ● ● ● ● ● ● UNR1121 UNR1122
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UNR1121/1122/1123/1124/112X/112Y
UN1121/1122/1123/1124/112X/112Y)
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
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Untitled
Abstract: No abstract text available
Text: • Prevent severe vibration or mechanical shock to resistor • Increase resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis surface with machine screws, eyelets or rivets
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3CJ10K
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Chip Resistor r025
Abstract: No abstract text available
Text: NT IA PL M CO S Features Applications • Special alloy resistor ■ Power supplies ■ Power rating at 70 °C: CRA2010 - 1.5 W, ■ Stepper motor drives *R oH CRA2512 - 3 W ■ Inductance less than 5 nH ■ RoHS compliant* CRA2010/CRA2512 - High Power Current Sense Chip Resistor
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CRA2010
CRA2512
CRA2010/CRA2512
Chip Resistor r025
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UNR1111
Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
B 47k 1112
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lcd projector
Abstract: HFR065A HFR880
Text: Focus Resistor / High Voltage Block Specifications Model Application No Hv kV Power(W) HFR880 Capacitor & Bleeder Block 32.0 1.5 HFR065A FR(6 shafts) for Projection 13.0 2.2 HSB134 HV Splitter for Projection 32.0 3.4 HSB170 HV Splitter for Projection 32.0
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HFR880
HFR065A
HSB134
HSB170
HSB125
HSB140
HSB500
HSB300
lcd projector
HFR065A
HFR880
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ltc6990
Abstract: ultrasonic piezo generator 40khz ultrasonic generator 1200 w 40khz PKM29-3A0 LTC6990MPS6 NTHS120601N2202J Linear Technology Timerblox
Text: LTC6990 TimerBlox: Voltage Controlled Silicon Oscillator Features Description Fixed-Frequency or Voltage-Controlled Operation – Fixed: Single Resistor Programs Frequency with <1.5% Max Error – VCO: Two Resistors Set VCO Center Frequency and Tuning Range
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LTC6990
488Hz
100kHz
300kHz
OT-23
400kHz
32kHz
34sec,
LTC6906/LTC6907
ultrasonic piezo generator 40khz
ultrasonic generator 1200 w 40khz
PKM29-3A0
LTC6990MPS6
NTHS120601N2202J
Linear Technology Timerblox
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PDF
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pulse load resistor wirewound resistors
Abstract: 0R330 49R90 philips resistor 2306
Text: Product Specification Philips Com ponents Cemented Wirewound Resistor 1 Watt 5% FEATURES AC01 2306 328. QUICK REFERENCE DATA High Power Dissipation in a Small Volume Resistance Range 0.1 i i to 1.5 K fì; E24 Series High Pulse Load Handling Capabilities
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