Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFR/U214A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
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IRFR/U214A
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFR214 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
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IRFR214
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DK0032
Abstract: ATC 600F
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • High Self Resonance Frequencies • Environmentally safe terminations Applications:
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DK0034
DK0035
DK0032
ATC 600F
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Untitled
Abstract: No abstract text available
Text: BAS20/BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 200-250VOLTS Features: * We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw
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BAS20/BAS21
200mAMPERS
200-250VOLTS
OT-23
OT-23
25-May-2011
BAS20
BAS21
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DK0032
Abstract: DK0034 capacitor 6r8 ATC 600F DK0033
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
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ATC 600F
Abstract: DK0032
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
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resistor 2.2 J 250v
Abstract: No abstract text available
Text: LEADED RESISTOR CF/CFP SPEER ELECTRONICS, INC. CARBON FILM RESISTOR CARBON FILM RESISTOR L l - Flameproof coating is available - Specify “CFP” d D C - Suitable for automatic machine insertion - Green or Beige Color Coating DIMENSIONS in/mm TYPE L(ref)
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155der
MIL-STD-202,
resistor 2.2 J 250v
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carbon film resistor
Abstract: No abstract text available
Text: LEADED RESISTOR CF/CFP SPEER ELECTRONICS, INC. CARBON FILM RESISTOR CARBON FILM RESISTOR L l - Flameproof coating is available - Specify “CFP” d D C - Suitable for automatic machine insertion - Green or Beige Color Coating DIMENSIONS in/mm TYPE L(ref)
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MIL-STD-202,
carbon film resistor
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T26A
Abstract: MIL-STD-202 METHOD 214
Text: LEADED RESISTOR CF/CFP CARBON FILM RESISTOR SPEER ELECTRONICS, INC. CARBON FILM RESISTOR L l - Flameproof coating is available - Specify “CFP” d D C - Suitable for automatic machine insertion - Green or Beige Color Coating DIMENSIONS in/mm TYPE L(ref)
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MIL-STD-202,
T26A
MIL-STD-202 METHOD 214
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TAKMAN
Abstract: No abstract text available
Text: INTRODUCING; TAKMAN “REX” Audio Grade Carbon Film Resistor “REY” Audio Grade Metal Film Resistor development of our 1st released audio grade The electric current laden with sound signals structure had not been suited for mass through resistors is influenced by the various
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REY25
REY50
REY75
TAKMAN
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RK73H2B-F
Abstract: RK73H2A-F res 1r8 5w capacitor 150uF smd 3528 RCULTE test point TDK CAP 3300PF 250V NPO NPO0805HTTD100J KL32TE tmc koa resistor 1206 110k .25w
Text: Components • • • • • • • Ceramic Capacitors Inductors Leaded Resistors Resistor Arrays Tantalum Capacitors Thick Film Resistors Thin Film Precision Resistors Component Kits For a complete listing of our engineering design kits see the Garrett Kits section of our catalog.
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KQ0805
KOACAPC080567C
KOACAPC080567N
KOACAPC080530ABN10
KOACAPC080567R
RK73H2B-F
RK73H2A-F
res 1r8 5w
capacitor 150uF smd 3528
RCULTE test point
TDK CAP 3300PF 250V NPO
NPO0805HTTD100J
KL32TE
tmc koa
resistor 1206 110k .25w
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Untitled
Abstract: No abstract text available
Text: IEC inlet filters FN 9222E General performance IEC inlet filter with earth line choke • ■ ■ ■ ■ ■ Rated currents up to 15A Excellent performance/size ratio Integrated earth line choke Optional medical versions B type Snap-in versions (S and S1 type)
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9222E
C/230V
Mil-HB-217F)
250VAC,
50/60Hz
400Hz
2768-m
22768-m
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Untitled
Abstract: No abstract text available
Text: IRFR/U214A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V
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IRFR/U214A
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Untitled
Abstract: No abstract text available
Text: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V
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IRFR214
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Untitled
Abstract: No abstract text available
Text: IRFR/U214A A d van ced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10 Li A Max. @ VOS = 250V
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IRFR/U214A
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Untitled
Abstract: No abstract text available
Text: IRFR/U2 1 4 A Advanced Power MOSFET FEATURES BV0SS = 250 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gale Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area m Lower Leakage Current : 10 nA Max. @ VD8= 250V
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FR/U214A
IRFR/U214A
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IRFR214
Abstract: No abstract text available
Text: IRFR214 A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance ID 20Q 2.2 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V
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IRFR214
IRFR214
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IRf 48 MOSFET
Abstract: gk12
Text: IRFR/U214A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance ID 20Q 2.2 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V
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IRFR/U214A
IRf 48 MOSFET
gk12
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4562 mosfet
Abstract: 4563 mosfet
Text: IRFR214 IRFU214 çm H A R R IS S E M I C O N D U C T O R N-Channel Power MOSFETs Avalanche Energy Rated M arch 1994 Package Features TO-251AA TOP VIEW • 2.2A, 250V • r DS on = 2 -0 £ î ’ SOURCE • Single Puise Avalanche Energy Rated DRAIN TAB • SOA Is Power-Disslpation Limited
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IRFR214
IRFU214
O-251AA
O-252AA
IRFR214,
IRFU214
4562 mosfet
4563 mosfet
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Untitled
Abstract: No abstract text available
Text: IRFR/U214A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 250V ■ Lower
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IRFR/U214A
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irfs614a
Abstract: MOSFET pA leakage
Text: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 250V H Lower Rds{on) * ^ •393
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IRFS614A
irfs614a
MOSFET pA leakage
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Untitled
Abstract: No abstract text available
Text: International llQR]Rectifier Data Sheet No. PD-6.058C IR51H214 SELF-OSCILLATING HALF-BRIDGE Features • ■ ■ Product Summary Floating channel designed for bootstrap operation Fully operational to +250V Tolerant to negative transient voltage dV/dt immune
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IR51H214
S5452
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ne 22 mosfet
Abstract: IRFS614A
Text: IRFS614A A dvanced Power MOSEET FEATURES BVDSS - 250 V 2.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2.1 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V
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IRFS614A
ne 22 mosfet
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DD313
Abstract: IRFS614A
Text: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ sv DSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 M A{M ax. @ VDS = 250V
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IRFS614A
DD313
IRFS614A
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