uj01
Abstract: M33 TRANSISTOR
Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE
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TC-2173
1988M
uj01
M33 TRANSISTOR
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transistor 5d
Abstract: TC-2177 IC S350 marking s350
Text: AdLib OCR DATA SHEET Evaluation IVEC SILICON TRANSISTOR ELECTRON DEVICE GN1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters a Resistors Built-in TYPE C 2.1+0 .1 1 .25±0.1 z + p C5 C5 +1 M N U:~ Ci
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TC-2177
1988M
transistor 5d
TC-2177
IC S350
marking s350
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NEC 2501
Abstract: TC-2178 resistor UJ marking
Text: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC
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TC-2178
1988M
NEC 2501
TC-2178
resistor UJ marking
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transistor a4z
Abstract: No abstract text available
Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ELECTRON DEVICE GN1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE C B 2.1+0.1 R1 = 10 kE2 RI 1.25±0.1 E Complementary to GA1A4Z
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TC-2175
1988M
transistor a4z
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C2M0280120D
Abstract: No abstract text available
Text: VDS 1200 V ID @ 25˚C 10 A C2M0280120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 280 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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C2M0280120D
O-247-3
O-24mplanted
C2M0280120D
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Untitled
Abstract: No abstract text available
Text: [<OA LEADED RESISTOR RN26/RK26 RADIAL METAL FILM SPEER ELECTRONICS, INC. LLU-UJ - LEADED GENERAL PURPOSE Lead frame construction - High density assembly & excellent self-standing strength - Color dot marking for resistance value & tolerance - Blue color coating
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OCR Scan
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RN26/RK26
RK26B2E
RN26C2C
RN26K2C
TN26C2E
RN262E
RN262C
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W
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OT-323
0535b05
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SOT23 KJA
Abstract: No abstract text available
Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type
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47kft)
Q62702-C2257
OT-23
Resistan200
SOT23 KJA
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type
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OCR Scan
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22kfl)
OT-23
6235bQS
D1B0634
a23St
0120B35
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hilton capacitors
Abstract: No abstract text available
Text: W E 7 TANTALUM CAPACITORS SWT SERIES DIMENSIONS AND TOLERANCE Dimension "d" - 0.020 ± 0 . 002’ 0.5±0.05mm Dimension "LL" 1.5 ±0.06" (38.1 ±1.6 mm) Tolerance on Diameter "D" - ±0.005" (±0.13 mm) Tolerance on Length “L" - ±0.015" (±0.38 mm) Part Marking Information
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Untitled
Abstract: No abstract text available
Text: DTC115TE DTC115TUA DTC115TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC115TE (EMT3) 0.6 package marking: l 1.3 0.6 É h I E H 1 I — DTC115TE; 69
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DTC115TE
DTC115TUA
DTC115TKA
SC-70)
SC-59)
DTC115TE;
DTC115TE,
DTC115TUA,
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x9cmme
Abstract: ic x9cmme data marking A019 X9C103 control up/down 0-255 X9MME RR-520 X9C102 X9C104 X9C503
Text: 8 1932 Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS — Active Current, 3 mA Max — Standby Current, 500 iiA Max • 99 Resistive Elements
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X9C102
X9C103
X9C503
X9C104
controlled683'
x9cmme
ic x9cmme data
marking A019
X9C103
control up/down 0-255
X9MME
RR-520
X9C102
X9C104
X9C503
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Untitled
Abstract: No abstract text available
Text: Preliminary Information Terminal Voltage ±5V X9CMME E2POT Digitally Controlled Potentiometer FEATURES DESCRIPTION • Compatible with X9MME • Low Power CMOS —Active Current, 3 mA Max —Standby Current, 500 pA Max • 99 Resistive Elements —Temperature Compensated
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X9C102
X9C103
X9C503
X9C104
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transistors marking HJ
Abstract: No abstract text available
Text: DTA124EE DTA124EUA DTA124EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA124EE (EMT3) hJLS-^ , MAh I .6±0.2 package marking: DTA124EE, DTA124EUA, and DTA124EKA; 15
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DTA124EE
DTA124EUA
DTA124EKA
SC-70)
SC-59)
DTA124EE,
DTA124EUA,
DTA124EKA;
DTA124EE
DTA124EUA
transistors marking HJ
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transistor D 716
Abstract: No abstract text available
Text: IMH15A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMH15A; H15 IMH15A (SMT6) 2 .9 ± 0 .2 1. 9 2 0 . 2 u .a r fo.95 0.95Ì • • • package contains two independent
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IMH15A
SC-74)
IMH15A;
DTC144TKA)
SC-59)
IMH15A
transistor D 716
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2SJ145
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch
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2SJ145
2SJ145
SC-70
10mVrms.
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2sk433
Abstract: 2SK43-3 CC OWV W
Text: <FIELD-EFFECT TRANSISTOR 2SK433 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION OUTLINE DRAWING 2SK433 is a super mint outline resin sealed silicon N channel 2.S -0.3 junction type FET. It is designed for low frequency voltage amplify,application,
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2SK433
2SK433
250Qtyp
SC-59
O-236
10mVnms.
10mVrms
2SK43-3
CC OWV W
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MARKING H07
Abstract: No abstract text available
Text: DTC363TK Digital transistor, NPN, with 1 resistor Features • available in SMT3 SMT, SC-59 package • package marking: DTC363TK; H07 Dimensions (Units : mm) • DTC363TK (SMT3) 1 0 * 0 .2 0.0 * 0 I 096 in addition to standard features of digital transistor, this transistor has:
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DTC363TK
SC-59)
DTC363TK;
DTC363TK
MARKING H07
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marking code H.5 Sot 23-5
Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
Text: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature
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TC4730A)
100mA:
OT-23-5
100mA
marking code H.5 Sot 23-5
Volt regulator 723 10 Pin
IC 723 voltage regulator
723 voltage regulator ic
TC47BR
ntc-47
TC-47
TL 4946
ntc47
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application fuse cum power failure indicator
Abstract: melcher LM 1000 melcher LM 24Q2000
Text: Q-Family D C -D C Converters < 1 0 0 W Benign Environment Q-Family 100 W DC-DC Converters Input to output isolation Single output: Series 24Q.48Q1000 Double output: Series 24Q.48Q2000 i:^ryxh:ig:hxÖffi:C:i • Input to output electric strength test 2800 V DC
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48Q1000
48Q2000
98/IN
application fuse cum power failure indicator
melcher LM 1000
melcher LM
24Q2000
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Untitled
Abstract: No abstract text available
Text: • 17313b5 GD33T31 T7b ■ B U R R - BROW N OPA642 Wideband, Low Distortion, Low Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz • ADC/DAC BUFFER AMPLIFIER • GAIN OF +1 BANDWIDTH: 400MHz • LOW DISTORTION IF AMPLIFIER
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17313b5
GD33T31
OPA642
-95dBc
400MHz
OT23-5
12-BIT
OPA642
ZZ331
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NCB fuse
Abstract: No abstract text available
Text: Table of Contents and Selection Chart A L U M IN U M A N D T A N T A L U M E L E C T R O L Y T IC C A P A C IT O R S T H R O U G H H O LE S(»ries Application/Feature Anti-Solvent Capacitance Range (uF) Working Voltage Range (Vdc) Operating Temp. Range f C)
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eprom 27c512
Abstract: CMOS drum generator 27C512 CXP88800 drum Generator cmos 16-BIT SYNCHRONOUS COUNTER
Text: SONY CXP88800 CMOS 8-bit Single Chip Microcomputer Piggyback/ evaluator type Description The CXP88800 is a CMOS 8-bit single chip micro computer of piggyback/evaluator combined type, which is developed for evaluating the function of the CXP88616/88624, CXP88732/88740/88748
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CXP88800
CXP88800
CXP88616/88624,
CXP88732/88740/88748
CXP88852/88860.
16-bit
250ns
16MHz
eprom 27c512
CMOS drum generator
27C512
drum Generator cmos
16-BIT SYNCHRONOUS COUNTER
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P521-1
Abstract: dlatgs P521 G p521 philips pyroelectric infrared sensor IEC134 pyroelectric tgs IEC 68-2-27 spectrometer pyroelectric amplifier circuit DLaTGS sensor
Text: P h ilip s C o m p o n e n t s rpyio 8 p/p52h _ J \ _ DEVELOPMENT DATA This data sh eet contains advance information and specifications w hich are subject to change w ithout notice. DEUTERATED LATGS PYROELECTRIC INFRARED SENSOR
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RPY108P/P5211
M89-1320/Y
P521-1
dlatgs
P521 G
p521
philips pyroelectric infrared sensor
IEC134
pyroelectric tgs
IEC 68-2-27 spectrometer
pyroelectric amplifier circuit
DLaTGS sensor
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