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    RETROGRADE WELL 0.35 Search Results

    RETROGRADE WELL 0.35 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    magnachip 0.18um

    Abstract: nmos transistor 0.35 um TI 046 magnachip 0.18um 1p6m
    Text: 0.18um 1P6M Low power 1.8V /3.3V updated in 2005.03.16 Features ƒ Vdd Core/IO 1.8V / 3.3V ƒ Substrate P-sub ƒ Well Retrograde Twin Well (Triple Well option) ƒ Isolation STI (Shallow Trench Isolation) ƒ Gate Oxide 37Å/70Å NO Oxide (electrical) ƒ


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    2P4M P 82

    Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
    Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um


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    TRANSISTOR 545

    Abstract: No abstract text available
    Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel


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    0.35Um 1P4M

    Abstract: nmos transistor 0.35 um
    Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS


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    cmos transistor 0.35 um

    Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
    Text: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS


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    nmos transistor 0.35 um

    Abstract: transistor 548
    Text: 0.30um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ Starting material P(100), Non-EPI ƒ Well Retrograde twin well structure ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide Thermally grown oxide of 73A thickness in electrical


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    XH035

    Abstract: CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area
    Text: 0.35 µm CMOS Process Family XH035 RF CMOS Modular mixed signal 0.35 µm CMOS process with passive Main Process Flow components available for mixed-signal/RF analog applications p-/p+ epi-substrate Independent retrograde n- and p-well Spiral top thick metal inductor


    Original     		XH035 CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area PDF

    256K DPRAM

    Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
    Text: CB45000 SERIES  HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability


    Original     		CB45000 256K DPRAM ST20 programmable schmitt trigger tristate nand gate PDF

    tristate nand gate

    Abstract: HCMOS6
    Text: CB45000 SERIES  HCMOS6 STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability


    Original     		CB45000 tristate nand gate HCMOS6 PDF

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    bi 370 transistor

    Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
    Text: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		V/20V 30um2 36um2 bi 370 transistor transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor PDF

    UM 66 datasheet

    Abstract: UM 66 in
    Text: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain ƒ Metallization Barrier Metal Metal Stacked Via ƒ Lithography ƒ Speed (nsec/gate) 2.5V/3.3V


    Original     		27um2 32um2 UM 66 datasheet UM 66 in PDF

    nmos transistor 0.35 um

    Abstract: No abstract text available
    Text: 0.25um 1P5M Logic 2.5V / 3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		32um2 36um2 30um2 nmos transistor 0.35 um PDF

    0.35uM STI

    Abstract: MAGNACHIP 0.35um 0.32um CMOS
    Text: 0.25um 1P5M Generic 2.5V / 3.3V or 2.5V / 5V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric


    Original     		30um2 36um2 0.35uM STI MAGNACHIP 0.35um 0.32um CMOS PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		32um2 36um2 30um2 100um2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Foundry Services for Integrated Circuits and MEMS Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s Custom Foundry Service is the alternative to traditional foundry services, allowing customers to


    Original     		M4007-052013 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their


    Original     		MICFOUND-060514 PDF

    manufacturer list cots radiation

    Abstract: RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance
    Text: Special Feature Rad Hard, Space Ready Case Study: Evolution of a Fab-Independent Radiation-Hardened COTS IC Supplier Even though rad-hard systems are essential in space and tactical military systems, rad-hard semiconductor processes are rare. But what’s even more


    Original     		800-645-UTMC manufacturer list cots radiation RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance PDF

    delco 466

    Abstract: seagate hard drive pcb TSC6000 TGC6000 op amp app notes variable PWM by using dsp TMS320F240 C240 TMS320 TMS320C240 app abstract
    Text: EXTENDING YOUR REACHTM NORTH AMERICAN EDITION INTEGRATION VOL. 13 ▼ NO. 6 ▼ SEPTEMBER 1996 AN UPDATE ON TEXAS INSTRUMENTS SEMICONDUCTORS Two gate arrays Microscopic photo of gate array 0.18-micron technology offers flexibility, innovation T Metal interconnect


    Original     		18-micron 125million-transistors-on-a-chip TGC6000 TEC6000 TSC6000 SSFN011 SFY53LXX609R delco 466 seagate hard drive pcb op amp app notes variable PWM by using dsp TMS320F240 C240 TMS320 TMS320C240 app abstract PDF

    Transistor morocco 9740

    Abstract: Ablebond 8360 con hdr hrs ablebond 8086 interfacing with 8254 peripheral Date Code Formats diodes St Microelectronics formatter board Canon interfacing of 8237 with 8086 ST tOP MaRKinGS 388BGA
    Text: RELIABILITY REPORT Q98001 SICL BUSINESS UNIT REPORT NUMBER : Q98001 QUALIFICATION TYPE : NEW DEVICE - NEW PACKAGE DEVICE : STPC Client SIP101 SALES TYPES : STPCD0166BTC3 - STPCD0175BTC3 TECHNICAL CODE : MDBT*CHDT1BR PROCESS : HCMOS6 - CROLLES FAB LOCATION


    Original     		Q98001 SIP101) STPCD0166BTC3 STPCD0175BTC3 388BGA Transistor morocco 9740 Ablebond 8360 con hdr hrs ablebond 8086 interfacing with 8254 peripheral Date Code Formats diodes St Microelectronics formatter board Canon interfacing of 8237 with 8086 ST tOP MaRKinGS PDF

    ASX 12 D Germanium Transistor

    Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
    Text: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques


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    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    AT90PWM81

    Abstract: No abstract text available
    Text: Features • High performance, low power Atmel AVR® 8-bit Microcontroller • Advanced RISC architecture • • • • – 131 powerful instructions - most single clock cycle execution – 32 x 8 general purpose working registers – Fully static operation


    Original     		8/16Kbytes 7734Qâ AT90PWM81 PDF

    AMP0E

    Abstract: AT90PWM81
    Text: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture – 131 Powerful Instructions - Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation – Up to 1 MIPS Throughput per MHz


    Original     		256Bytes 7734P AMP0E AT90PWM81 PDF