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    RF AMPLIFIER BROAD BAND Search Results

    RF AMPLIFIER BROAD BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    RF AMPLIFIER BROAD BAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    frankfurt

    Abstract: TFB2208
    Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several


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    PDF TFB2208T frankfurt TFB2208

    frankfurt oder

    Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
    Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several


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    PDF TFB2208T frankfurt oder 617db-1018 Megaxess TFB2208 frankfurt TFB2208T

    sWG 24 copper wire

    Abstract: No abstract text available
    Text: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D1094UK 400MHz 500MHz sWG 24 copper wire

    dmos rf fet 4w 28v

    Abstract: D1083UK
    Text: TetraFET D1083UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS


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    PDF D1083UK 200MHz dmos rf fet 4w 28v D1083UK

    D1093UK

    Abstract: No abstract text available
    Text: TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D1093UK 500MHz D1093UK

    D1094UK

    Abstract: No abstract text available
    Text: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D1094UK 400MHz D1094UK

    D2294UK

    Abstract: idq06
    Text: TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D2294UK 500MHz 500MHz 24swg D2294UK idq06

    D2293UK

    Abstract: No abstract text available
    Text: TetraFET D2293UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D2293UK 500MHz D2293UK

    D2201UK

    Abstract: No abstract text available
    Text: TetraFET D2201UK.S METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D2201UK

    dmos rf fet 4w 28v

    Abstract: D1083UK
    Text: TetraFET D1083UK SEME LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND


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    PDF D1083UK 200MHz dmos rf fet 4w 28v D1083UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET SEME D1083UK LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND


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    PDF D1083UK 200MHz

    D2294UK

    Abstract: No abstract text available
    Text: TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D2294UK 500MHz D2294UK

    42 swg enamelled copper wire

    Abstract: copper wire 42 SWG
    Text: TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS


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    PDF D1093UK 500MHz 42 swg enamelled copper wire copper wire 42 SWG

    D2020UK

    Abstract: No abstract text available
    Text: PR EL IM INA RY TetraFET D2020UK–P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss


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    PDF D2020UK 55GSS

    VDB50

    Abstract: No abstract text available
    Text: PR EL IM INA RY TetraFET D1011UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss


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    PDF D1011UK-P VDB50

    Untitled

    Abstract: No abstract text available
    Text: PR EL IM INA RY TetraFET D1211UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss


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    PDF D1211UK-P 500MHz

    D2019

    Abstract: No abstract text available
    Text: PR EL IM INA RY TetraFET D2019UK-p METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss


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    PDF D2019UK-p D2019

    Untitled

    Abstract: No abstract text available
    Text: Mil TetraFET Etti IMI SEME D1011UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED 4. FEATURES • SIMPLIFIED AMPLIFIER DESIGN -Vj * • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE


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    PDF D1011UK S08PACKAGE 100mA

    Untitled

    Abstract: No abstract text available
    Text: lili TetraFET 1111 SEME D2004UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W -28V-1GHZ PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN1 SOURCE COMMON


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    PDF D2004UK -28V-1GHZ

    Untitled

    Abstract: No abstract text available
    Text: nil Vrrr= TetraFET mi D2010UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W-28V-1GHZ SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1 SOURCE


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    PDF D2010UK 0W-28V-1GHZ

    Untitled

    Abstract: No abstract text available
    Text: mi TetraFET =&= INI D1211UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W - 12.5V -500MHz SINGLE ENDED J JW FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE


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    PDF D1211UK -500MHz S08PACKAGE 500MHz

    6 ghz amplifier 20w

    Abstract: No abstract text available
    Text: lili TetraFET itti SEME 02213UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V- 1 GHz PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN1 SOURCE COMMON


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: nil Vrr r = mi TetraFET D2005UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1


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    PDF D2005UK 27x45°

    Untitled

    Abstract: No abstract text available
    Text: nil Vrr r = mi TetraFET D2001UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1


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    PDF D2001UK 27x45°