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    RF FAIRCHILD TRANSISTOR 100MHZ Search Results

    RF FAIRCHILD TRANSISTOR 100MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF FAIRCHILD TRANSISTOR 100MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Ksc1674

    Abstract: No abstract text available
    Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic


    Original     		PDF KSC1674 600MHz 100MHz Ksc1674

    rf fairchild transistor 100mhz amplifier

    Abstract: KSC2786 rf fairchild transistor 100mhz
    Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic


    Original     		PDF KSC2786 O-92S 600MHz 100MHz rf fairchild transistor 100mhz amplifier KSC2786 rf fairchild transistor 100mhz

    Untitled

    Abstract: No abstract text available
    Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2786 600MHz 100MHz O-92S KSC2786

    ksc1674y

    Abstract: GFE10 KSC1674C-YTA
    Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92


    Original     		PDF KSC1674 600MHz 100MHz KSC1674 KSC1674COTA KSC1674YTA ksc1674y GFE10 KSC1674C-YTA

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    mmbt5770

    Abstract: No abstract text available
    Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings


    Original     		PDF MMBT5770 MMBT5770 OT-23

    MMBT5770

    Abstract: 3 w RF POWER TRANSISTOR NPN RF TRANSISTOR RF NPN POWER TRANSISTOR 100MHz rf fairchild transistor 100mhz
    Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings


    Original     		PDF MMBT5770 OT-23 MMBT5770 3 w RF POWER TRANSISTOR NPN RF TRANSISTOR RF NPN POWER TRANSISTOR 100MHz rf fairchild transistor 100mhz

    Untitled

    Abstract: No abstract text available
    Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings


    Original     		PDF MMBT5770 OT-23 MMBT5770

    fr4pcb

    Abstract: MMBT5770 RF Transistor reference
    Text: MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings


    Original     		PDF MMBT5770 OT-23 fr4pcb MMBT5770 RF Transistor reference

    BF240

    Abstract: BF240 CEB CEB npn DATE CODE FAIRCHILD
    Text: BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current


    Original     		PDF BF240 25Budgetary BF240 ND74Z BF240 CEB CEB npn DATE CODE FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: KST5179 KST5179 RF Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage


    Original     		PDF KST5179 OT-23

    Untitled

    Abstract: No abstract text available
    Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92


    Original     		PDF KSC1674 600MHz 100MHz

    KSC1393

    Abstract: No abstract text available
    Text: KSC1393 KSC1393 TV VHF Tuner RF Amplifier Forward AGC • High Current Gain Bandwidth Product : fT=700MHz (TYP.) • Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz • Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.) TO-92 1 1. Base 2. Emitter 3. Collector


    Original     		PDF KSC1393 700MHz 200MHz KSC1393YTA KSC1393OTA KSC1393YBU KSC1393OBU KSC1393

    KSC2786

    Abstract: No abstract text available
    Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2786 600MHz 100MHz O-92S KSC2786

    KSC2786

    Abstract: No abstract text available
    Text: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2786 600MHz 100MHz O-92S KSC2786

    KSC1674

    Abstract: RF POWER TRANSISTOR final 100MHz rf fairchild transistor 100mhz
    Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92


    Original     		PDF KSC1674 600MHz 100MHz KSC1674 RF POWER TRANSISTOR final 100MHz rf fairchild transistor 100mhz

    KSC1674

    Abstract: No abstract text available
    Text: KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC1674 600MHz 100MHz KSC1674

    Untitled

    Abstract: No abstract text available
    Text: KSC2755 KSC2755 RF AMP, FOR VHF &TV TUNER • Low NF, High GPE • Forward AGC Capability to 30 dB • NF=2.0dB TYP. , GPE=23dB (TYP.) at f=200MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2755 200MHz OT-23 OT-23

    KST5179

    Abstract: No abstract text available
    Text: KST5179 KST5179 RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage


    Original     		PDF KST5179 OT-23 KST5179

    SS9016

    Abstract: No abstract text available
    Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. • High total power dissipation. PT=400mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF SS9016 400mW) SS9016

    KST5179

    Abstract: No abstract text available
    Text: KST5179 KST5179 RF Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage


    Original     		PDF KST5179 OT-23 KST5179

    KST5179

    Abstract: No abstract text available
    Text: KST5179 KST5179 RF Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC Parameter Value 20 Units V Collector-Emitter Voltage


    Original     		PDF KST5179 OT-23 KST5179

    Untitled

    Abstract: No abstract text available
    Text: SS9016 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE. TO-92 • High total power dissipation. PT=400mW ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF SS9016 400mW)

    NPN Epitaxial Silicon Transistor

    Abstract: KSC1674
    Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO -92 • High C urrent-G ain Bandwidth Product fj= 6 0 0 M H z Typ • High P ow er Gain G PE=22dB at f=100M H z ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic


    OCR Scan     		PDF KSC1674 NPN Epitaxial Silicon Transistor KSC1674