smd transistor marking 12W
Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3
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MCH4009
17dB2GHz
SC-72
SC-43
SC-51
O-226
SC-71
O-126
O-92MOD
smd transistor marking 12W
SMD transistor Marking 13w
SMD type Marking 13w
SPM5001
SOT89 PNP marking GA
ec3h04b
smd transistor 12W 52
SMA4205
6c 6pin
SGD103
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2031M16
NESG2031M16
NESG2031M16-T3
PU10394EJ01V0DS
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2SC5011
Abstract: 2SC5011-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5011 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 6.5 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5011
2SC5011-T1
2SC5011
2SC5011-T1
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NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M14
NESG3031M1conductor
NEC JAPAN
NESG3031M14
NESG3031M14-T3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2031M05
NESG2031M05
NESG2031M05-T1
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2SC5013
Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5013
2SC5013-T1
2SC5013
2SC5013-T1
transistor r47
MARKINGR46
marking R46
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NEC JAPAN
Abstract: NESG2021M16 NESG2021M16-T3
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M16
NEC JAPAN
NESG2021M16
NESG2021M16-T3
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2012 NEC
Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 transistor marking T1k ghz
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG30NEC
2012 NEC
NESG3031M05
NESG3031M05-A
NESG3031M05-T1
transistor marking T1k ghz
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NESG3031M05
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG3031M05
NESG3031M05-T1
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M33 nec
Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2046M33
NESG2046M33-T3
M33 nec
M33 TRANSISTOR
NESG2046M33
marking T7
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M05
NESG2021M05
NESG2021M05-T1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M16
NESG2021M16
NESG2021M16-T3
PU10393EJ01V0DS
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2012 NEC
Abstract: transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
2012 NEC
transistor marking T1k ghz
nec 2012
NESG3031M05
NESG3031M05-T1
MARKING T1K
transistor marking T1k
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marking NEC rf transistor
Abstract: nec npn rf
Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over
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NE662M03
NE662M03
NE662M03-T1
marking NEC rf transistor
nec npn rf
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marking NEC rf transistor
Abstract: nec npn rf
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted
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NESG2107M33
NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
marking NEC rf transistor
nec npn rf
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2SC5012-T1
Abstract: transistor marking R37 ghz 2SC5012
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5012 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 9 GHz TYP. • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package
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2SC5012
2SC5012-T1
2SC5012-T1
transistor marking R37 ghz
2SC5012
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transistor dc 558 npn
Abstract: 2SC5843
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5843
2SC5843-T3
transistor dc 558 npn
2SC5843
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NEC semiconductor
Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
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NESG210719
NESG210719-T1-A
NESG210719-T1
NESG210719-A
NEC semiconductor
NEC JAPAN
marking NEC rf transistor
nec npn rf
NESG210719
NESG210719-T1
transistor RF S-parameters
NEC D7
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marking NEC rf transistor
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5843
2SC5843
2SC5843-T3
PU10353EJ01V0DS
marking NEC rf transistor
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Untitled
Abstract: No abstract text available
Text: CLC5506 CLC5506 Gain Trim Amplifier GTA Literature Number: SNOS456C CLC5506 Gain Trim Amplifier (GTA) General Description Features The CLC5506 is a low noise amplifier with programmable gain for use in cellular base stations, WLL, radar and RF/IF subsystems where gain control is required to increase the
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CLC5506
CLC5506
SNOS456C
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER
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MHW1815/D
301AK
MHW1815
MHW1815/D
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MHW1916
Abstract: No abstract text available
Text: MOTOROLA The RF Line MHW1916 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances 15 W 1930 – 1990 MHz RF POWER AMPLIFIER
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MHW1916
301AK
MHW1916
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER
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MHW1915/D
301AK
MHW1915
MHW1915/D
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2SC5761
Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5761
2SC5761-T2
PU10212EJ02V0DS
2SC5761
2SC5761-T2
2FB200
transistor s2p
MARKING T16
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