Untitled
Abstract: No abstract text available
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
2SMES-01
X301-E-1b
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rf mems switch
Abstract: automatic transfer switch circuit diagram MEMS SWITCH 2SMES-01-EVBA rf mems 2SMES-01 N5230 4350B structure MEMS IC
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
X302-E-1
rf mems switch
automatic transfer switch circuit diagram
MEMS SWITCH
2SMES-01-EVBA
rf mems
2SMES-01
N5230
4350B
structure MEMS IC
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rf mems switch
Abstract: 2SMES-01-EVBA automatic transfer switch circuit diagram rf mems switch using Power Handling Rogers 4350B substrate
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
2SMES-01
2SMES-01CT
X301-E-1b
rf mems switch
2SMES-01-EVBA
automatic transfer switch circuit diagram
rf mems switch using Power Handling
Rogers 4350B substrate
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rf mems switch
Abstract: full automatic Washing machines circuit diagram 2SMES-01-EVBA at10GHz
Text: RF MEMS Switch 2SMES-01 Surface-mount ,10GHz Band typical , Miniature, SPDT - NO, RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical / 8 GHz rated (50Ω) Isolation of 30 dB Insertion loss of 1dB ■ Ultra-miniature 5.2x3.0×1.8 mm (L×W×H).
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2SMES-01
10GHz
100million
rf mems switch
full automatic Washing machines circuit diagram
2SMES-01-EVBA
at10GHz
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2SMES-01-EVBA
Abstract: No abstract text available
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
2SMES-01
2SMES-01CT
A178-E-01
2SMES-01-EVBA
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rf mems switch
Abstract: 2SMES-01 MEMS SWITCH 2SMES-01-EVBA 4350B rf mems
Text: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).
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2SMES-01
X302-E-1
rf mems switch
2SMES-01
MEMS SWITCH
2SMES-01-EVBA
4350B
rf mems
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Untitled
Abstract: No abstract text available
Text: All rights reserved 2013 OMMIC Fabrication de MMIC Intégrant des MEMS RF Brice GRANDCHAMP b.grandchamp@ommic.com RF MEMS workshop, Microwave & RF salon, Paris, April 2013 Plan OMMIC technologies Development of MEMS at OMMIC All rights reserved © 2013 OMMIC
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ED02AH
D01PH
D01MH
D007IH
100Hz
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Untitled
Abstract: No abstract text available
Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of
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R5775
Abstract: 2SMES-01 MEGTRON R-5775 N5230 rf mems switch using Power Handling megtron6 R5775
Text: Surface-mounted MEMS Switch 2SMES-01 Surface-mounted, ultracompact SPDT MEMS switch usable up to 10-GHz band typical . • Exceptional high-frequency characteristics in a broad spectrum up to 10 GHz (typical) At 8 GHz (50Ω): Isolation: 30 dB min., Insertion loss: 1 dB max.
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10-GHz
2SMES-01
2SMES-01
R5775,
N5230
A178-E1-03
77-588-9200/Fax:
R5775
MEGTRON
R-5775
rf mems switch using Power Handling
megtron6 R5775
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Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
Abstract: varactor
Text: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,
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889-A1,
17th-20th,
Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
varactor
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stacked transistor shunt switch
Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor
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RMSW101
Abstract: RMSW221
Text: Radant MEMS RF MEMS Switches and Products The Most Reliable MEMS Switches 2012-2013 RF Gn d RF Out Gat e RF 255 Hudson Road Stow, MA 01775 Tel: 978.562.3866 Fax: 978.562.6277 E-mail: sales@radantmems.com www.radantmems.com 1/4/2013 Gn d RF In Gat e 1 2 2 TABLE OF CONTENTS
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RMSW100HP,
RMSW101,
RMSW200HP,
RMSW201,
RMSW220HP,
RMSW221,
RMSW240,
RMDR1000
RMSW101
RMSW221
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RF3023
Abstract: RF3023TR7
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
RF3023
DS110203
RF3023SR
RF3023TR7
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2 GHz BJT
Abstract: rfmd sc70-6 branding RFC MICRO DS101111 RF3023
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
RF3023
DS101111
RF3023SR
RF3023PCK-410
2 GHz BJT
rfmd sc70-6 branding
RFC MICRO
DS101111
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Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
Abstract: varactor high power varactor
Text: IEEE BCTM 12.1 Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits Invited C. Huang1, K. Buisman1, L. K. Nanver1, P. J. Zampardi2, L. E. Larson3, and L. C. N. de Vreede1 1 Delft University of Technology, Delft, 2628 CD, the Netherlands
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889-A1,
Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits
varactor high power
varactor
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Untitled
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
10MHz
28dBm
58dBm
RF3023
1980MHz)
915MHz)
DS090709
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Untitled
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
RF3023
10MHz
28dBm
18dBm
915MHz)
1980MHz)
DS091023
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1ghz bjt
Abstract: rf3024
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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RF3024
RF3024
300kHz
28dBm
18dBm
DS100728
1ghz bjt
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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RF3024
RF3024
10MHz
28dBm
18dBm
915MHz)
1980MHz)
DS100118
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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RF3024
RF3024
10MHz
DS120723
RF3024SR
RF3024PCK-410
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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RF3024
10MHz
28dBm
58dBm
RF3024
915MHz)
1980MHz)
DS090731
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Untitled
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
RF3023
300kHz
28dBm
DS100728
RF3023SR
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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RF3024
RF3024
300kHz
28dBm
18dBm
DS120523
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Untitled
Abstract: No abstract text available
Text: ANALOG ► DEVICES Preliminary Technical 10W S P D T R F MEMS Switch with Integrated Control and Boost Circuitry ADG1939 la ta FEATURES GENERAL DESCRIPTION Wide frequency range: dc to 6 GHz High power handling capability: 10W/40dBm 0.2 dB insertion loss at 1 GHz
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ADG1939
0W/40dBm
ADG1939
65dBm
24-Lead
CP-24-9)
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