Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF MOSFET DRIVER Search Results

    RF MOSFET DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    COP370N Rochester Electronics LLC COP370 - Display Driver, MOS, PDIP20 Visit Rochester Electronics LLC Buy
    ICL7667MJA/883B Rochester Electronics LLC Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8, FRIT SEALED, CERDIP-8 Visit Rochester Electronics LLC Buy
    ICL7667MJA Rochester Electronics LLC Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 Visit Rochester Electronics LLC Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy

    RF MOSFET DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND


    Original
    MRF171A Mosfet J49 PDF

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET


    Original
    MRF171A/D MRF171A MRF171A Mosfet J49 PDF

    Mosfet J49

    Abstract: DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products
    Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.


    Original
    MRF171A/D MRF171A Mosfet J49 DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products PDF

    Mosfet J49

    Abstract: MRF171 MRF171A VK200 ADC 0824
    Text: Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz


    Original
    MRF171A/D MRF171A Mosfet J49 MRF171 MRF171A VK200 ADC 0824 PDF

    POWER MOSFET Rise Time 1 ns

    Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
    Text: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer


    Original
    IXZ4DF18N50 DEIC-515 IXZ318N50 IXZ4DF18N50 POWER MOSFET Rise Time 1 ns S 170 MOSFET mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF deic 515 PDF

    MRF177

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz


    Original
    MRF177/D MRF177 MRF177/D PDF

    500w mosfet power amplifier circuit diagram

    Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
    Text: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original
    IXZ421DF18N50 DEIC421 IXZ318N50 IXZ421DF18N50 500w mosfet power amplifier circuit diagram RF POWER MOSFET 500w hf power amplifier circuit diagram power mosfet triggering circuit mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier PDF

    DEIC421

    Abstract: 13.56Mhz class e power amplifier mosfet driver 5v to 30v RF MOSFET Driver RF MOSFETs power amplifier mosfet up to 50mhz SMPS CIRCUIT DIAGRAM 5V 20A "RF MOSFETs" Class E power amplifier, 13.56MHz DEIC420 RF MOSFET Gate Driver IC
    Text: DEIC421 RF MOSFET DRIVER 20 Ampere Ultrafast RF MOSFET Driver With Kelvin Connection Features • Built using the advantages and compatibility of CMOS and IXYS HDMOS processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V


    Original
    DEIC421 DEIC421 13.56Mhz class e power amplifier mosfet driver 5v to 30v RF MOSFET Driver RF MOSFETs power amplifier mosfet up to 50mhz SMPS CIRCUIT DIAGRAM 5V 20A "RF MOSFETs" Class E power amplifier, 13.56MHz DEIC420 RF MOSFET Gate Driver IC PDF

    transformer tank design calculation

    Abstract: Noble resistor 50w power transformer tank calculation DEIC420 DEIC420 RF MOSFET Gate Driver IC FLUKE 87 schematic rf Power supply 500w equivalent circuit autotransformer P6131 RF transformer turn ratio 12
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE “Stand Alone” RF Power Capabilities Of The DEIC420 MOSFET Driver IC at 3.6, 7, 10, and 14 MHZ. Matthew W. Vania Directed Energy, Inc. Abstract The DEIC420 MOSFET driver IC is evaluated as a “stand alone” RF source at 3.6, 7, 10, and 14 MHZ. To create up to 47W of CW RF all that


    Original
    DEIC420 0-471-03018-X transformer tank design calculation Noble resistor 50w power transformer tank calculation DEIC420 RF MOSFET Gate Driver IC FLUKE 87 schematic rf Power supply 500w equivalent circuit autotransformer P6131 RF transformer turn ratio 12 PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    IXZ4DF12N100

    Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
    Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original
    IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz PDF

    RF MOSFET

    Abstract: MRF171A
    Text: •sSsmi-Conductoi ZPtoauati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from


    Original
    MRF171A 150MHz RF MOSFET MRF171A PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 PDF

    smps 1kW

    Abstract: smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet
    Text: APT0001 By: Richard Frey, P.E. High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples 1 High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples Introduction With the improvement in high power MOSFETs of late


    Original
    APT0001 smps 1kW smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet PDF

    PE4246

    Abstract: PE4246-EK
    Text: PRODUCT SPECIFICATION PE4246 SPST High-Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE4246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and


    Original
    PE4246 PE4246 50-ohm 50-ohm PE4246-EK PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION PE4246 SPST High-Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE4246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and


    Original
    PE4246 PE4246 50-ohm 50-ohm PDF

    PE4246

    Abstract: PE4246-EK
    Text: PRELIMINARY SPECIFICATION PE4246 SPST High-Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE4246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and RF2


    Original
    PE4246 PE4246 PE4246-EK PDF

    EVLD02

    Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
    Text: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They


    Original
    O-263 O-220 DEIC420 45MHz. EVDD404 EVDF404 EVLD02 IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD IXDD414CI RF MOSFETs 10mhz mosfet EVDN404 PDF

    PE84246

    Abstract: PE84246-EK
    Text: ADVANCE INFORMATION PE84246 Military Operating Temperature Range High Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE84246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and


    Original
    PE84246 PE84246 50-ohm 50-ohm PE84246-EK PDF

    J115 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan
    10pFD 50Vdc 1N5347B, RF177 J115 mosfet PDF

    J945

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan
    MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan
    MRF177/D PDF

    FERROXCUBE VK200

    Abstract: motorola zener mosfet j122 vk200 DV2820 VK200-19 VK-200-19 VK-200 BLF244 and equivalent j122 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF166 MRF166C The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz.


    OCR Scan
    MRF166C MRF166) MRF136, DV2820, BLF244, SD1902, ST1001 MRF166 MRF166C RF166 FERROXCUBE VK200 motorola zener mosfet j122 vk200 DV2820 VK200-19 VK-200-19 VK-200 BLF244 and equivalent j122 mosfet PDF

    Mosfet J49

    Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
    Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •


    OCR Scan
    MRF171A/D MRF171A Mosfet J49 MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912 PDF