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    RF OUTPUT POWER AMPLIFIER Search Results

    RF OUTPUT POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    RF OUTPUT POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    powermax

    Abstract: No abstract text available
    Text: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)


    Original     		PDF 16-Module 15-Module powermax

    MHW1916

    Abstract: No abstract text available
    Text: MOTOROLA The RF Line MHW1916 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances 15 W 1930 – 1990 MHz RF POWER AMPLIFIER


    Original     		PDF MHW1916 301AK MHW1916

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER


    Original     		PDF MHW1915/D 301AK MHW1915 MHW1915/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER


    Original     		PDF MHW1815/D 301AK MHW1815 MHW1815/D

    Keithley

    Abstract: No abstract text available
    Text: Number 2251 Application Note Series Testing RF Power Amplifiers with the Model 2306 Battery/Charger Simulator’s Pulse Current Step Function Introduction Typically, production testing of DC RF power amplifiers involves measuring RF power output and drive current consumption. During testing, the power amplifier is programmed to output a series of RF power levels, then load current measurements


    Original     		PDF NL-4200 08005KDCI Keithley

    MHW1916

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances


    Original     		PDF MHW1916/D MHW1916 301AK MHW1916

    MOTOROLA 638

    Abstract: MHW1915
    Text: MOTOROLA Order this document by MHW1915/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System


    Original     		PDF MHW1915/D MHW1915 301AK MOTOROLA 638 MHW1915

    MHW1815

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1815/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1815 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System


    Original     		PDF MHW1815/D MHW1815 301AK MHW1815

    MHW1915

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1915/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System


    Original     		PDF MHW1915/D MHW1915 301AK MHW1915

    MHW1916

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances


    Original     		PDF MHW1916/D MHW1916 301AK MHW1916

    "RF Power Amplifier"

    Abstract: MHW1815
    Text: MOTOROLA Order this document by MHW1815/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1815 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System


    Original     		PDF MHW1815/D MHW1815 301AK "RF Power Amplifier" MHW1815

    XP1013-BD

    Abstract: DM6030HK TS3332LD XP1013 XP1013-BD-000V XP1013-BD-EV1
    Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1013-BD 08-Aug-07 MIL-STD-883 XP1013-BD XP1013-BD-000V XP1013-BD-EV1 XP1013 XP1013-BD DM6030HK TS3332LD XP1013-BD-000V XP1013-BD-EV1

    DM6030HK

    Abstract: TS3332LD XP1013 XP1013-BD XP1013-BD-000V XP1013-BD-EV1
    Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1013-BD 08-Aug-07 MIL-STD-883 XP1013-BD XP1013-BD-000V XP1013-BD-EV1 XP1013 DM6030HK TS3332LD XP1013-BD XP1013-BD-000V XP1013-BD-EV1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances


    Original     		PDF MHW1916/D MHW1916 301AK

    Untitled

    Abstract: No abstract text available
    Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-May-05 P1013 MIL-STD-883

    Mixers

    Abstract: MESFET x-band waveguide isolators 10 GHz mixer diode 20 GHz schottky diode
    Text: DOUBLE-SIDEBAND MIXER CIRCUITS SBW SERIES SBB SERIES Waveguide RF, SMA LO/IF DC Biasable, Low LO Power RF INPUT RF INPUT IF OUTPUT LO INPUT IF OUTPUT LO INPUT DB, DM SERIES SBE SERIES General Purpose Even Harmonic 1/2 LO RF INPUT IF OUTPUT RF INPUT IF OUTPUT


    Original     		PDF C-34B/151 Mixers MESFET x-band waveguide isolators 10 GHz mixer diode 20 GHz schottky diode

    Untitled

    Abstract: No abstract text available
    Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-May-05 P1013 MIL-STD-883

    MHW1815

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1815 Microwave Bipolar Power Am plifier • • 15 W 1805-1890 MHz RF POWER AMPLIFIER Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min 50 Ohm Input/Output System


    OCR Scan     		PDF MHW1815 301AK--01, MHW1815

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Am plifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930-1990 MHz RF POWER AMPLIFIER


    OCR Scan     		PDF MHW1915 301AK--01, MHW1915

    ultrasonic 100 khz transmitter

    Abstract: BGY208 JR 200 RF TRANSMITTER
    Text: Objective specification Philips Semiconductors UHF amplifier module BGY208 PINNING - SOT388A FEATURES • 6.8 V nominal supply voltage DESCRIPTION PIN • 3.5 W output power • Easy output power control by DC voltage. APPLICATIONS 1 RF input 2 VC 3 Vs 4 RF output


    OCR Scan     		PDF BGY208 BGY208 OT388A MLB740 711G62b OT388A. ultrasonic 100 khz transmitter JR 200 RF TRANSMITTER

    DB35T

    Abstract: BGY240
    Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY240 FEATURES PINNING - SOT388C • 3.5 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc Vs RF output 3 APPLICATIONS


    OCR Scan     		PDF BGY240 OT388C BGY240 OT388C. DB35T

    msa386

    Abstract: BGY207 915 transistor ULTRASONIC MODULE us
    Text: Philips Semiconductors Objective specification UHF amplifier module BGY207 FEATURES PINNING - SOT359A • 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS


    OCR Scan     		PDF BGY207 OT359A BGY207 OT359A ULB740 7110fiHb 0103fib3 OT359A. 711002t. msa386 915 transistor ULTRASONIC MODULE us

    MSA486

    Abstract: uhf 3W amplifier BGY206 0104220
    Text: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS


    OCR Scan     		PDF BGY206 OT388A BGY206 OT388A MSA486 MLB740 OT388A. 7110fl2l> MSA486 uhf 3W amplifier 0104220

    MGD363

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors UHF amplifier module BGY204 PINNING-SOT321B FEATURES • 4.8 V nominal supply voltage PIN DESCRIPTION • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS


    OCR Scan     		PDF BGY204 OT321B PINNING-SOT321B BGY204 MSA489 MGD363