RF power amplifier MHz
Abstract: AM020340SF-3H uhf amplifier AM053231SF-3H rf power amplifier 40 MHZ
Text: The RF Power House 225 - 300 MHz 10 Watt Power Amplifier AM020340SF-3H DESCRIPTION AMCOM's AM020340SF-3H is a UHF Power Amplifier designed for high FEATURES power RF applications. The class AB amplifier operates from 225 to 300 MHz • Covers frequency range from
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AM020340SF-3H
AM020340SF-3H
28VDC
20VDC
AM053231SF-3H
RF power amplifier MHz
uhf amplifier
rf power amplifier 40 MHZ
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PHM002
Abstract: idq06a
Text: polyfet rf devices PHM002 Power RF Amplifiers Power = 10 Watts Bandwidth = 250 to 400 Mhz Gain = 10 dB Vdd =12.5 Volts 50 ohms Input/Output Impedance Description The PHM002 is a single stage amplifier specifically designed for Military Bandwidth. This amplifier can be used as a
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PHM002
PHM002
idq06a
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AETHERCOMM
Abstract: Acros
Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It
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Polyfet RF Devices
Abstract: PHM012 Polyfet
Text: polyfet rf devices PHM012 Power RF Amplifiers Power = 5 Watts Bandwidth = 340 to 370 Mhz Gain = 25 dB Vdd = 10 Volts 50 ohms Input/Output Impedance Description The PHM012 is a two stage amplifier specifically designed military and commercial bandwidths. This amplifier can
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PHM012
PHM012
370MHz,
10Vdc,
Polyfet RF Devices
Polyfet
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RF9002000-10
Abstract: No abstract text available
Text: Preliminary data sheet RF9002000-10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF9002000-10
F33370
RF9002000-10
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Untitled
Abstract: No abstract text available
Text: Preliminary data sheet RF1700 2400 -10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A and includes RF proctection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF1700
F33370
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Untitled
Abstract: No abstract text available
Text: Preliminary data sheet RF001220 - 10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF001220
F33370
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Untitled
Abstract: No abstract text available
Text: Preliminary data sheet RF59006400 - 10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF59006400
F33370
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Untitled
Abstract: No abstract text available
Text: Preliminary data sheet RF0011000-10 bi RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations and 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF0011000-10
F33370
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RF801000
Abstract: No abstract text available
Text: Preliminary data sheet RF801000 -10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF801000
F33370
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage
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MHW1910/D
MHW1910-1
301AWâ
MHW1910â
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Motorola 666
Abstract: MHW1910 MHW1910-1 1800 ldmos
Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage
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MHW1910/D
MHW1910-1
301AW
MHW1910
Motorola 666
MHW1910-1
1800 ldmos
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solid state amplifier
Abstract: operation of class c amplifier
Text: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C
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2.45 Ghz power amplifier 45 dbm
Abstract: transistor amplifier 3 ghz 10 watts 2.45 Ghz power amplifier
Text: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA 0.8-3.2-10 was designed to • 5 watts minimum output power be used as a laboratory amplifier for all medium • 9 watts typical output power power testing needs from 800 MHz to 3.2 GHz. This
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25c2625
Abstract: MHW1910-1 1181BSC Motorola 666 MHW1910
Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts
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MHW1910/D
MHW1910-1
301AW
MHW1910
25c2625
MHW1910-1
1181BSC
Motorola 666
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MAAM-007502-CPA512
Abstract: MAAM-007502-SPA512 PA512 200-IP2
Text: Cascadable Amplifier 10 to 500 MHz PA512 / SPA512 V1 Features • • • • Product Image HIGH POWER OUTPUT: +27.5 dBm TYP. HIGH THIRD ORDER I.P.: +39 DBm (TYP.) MODERTE NOISE FIGURE: 5.2 dB (TYP.) GaAs FET AMPLIFIER Description The PA512 0.5 watt RF power amplifier is a discrete
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PA512
SPA512
MIL-STD-883
PA512
MAAM-007502-SPA512
MAAM-007502-CPA5
MAAM-007502-CPA512
MAAM-007502-SPA512
200-IP2
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PA512
Abstract: No abstract text available
Text: PA512 / SMPA512 Cascadable Amplifier 10 to 500 MHz Rev. V1 Features • • • • Product Image HIGH POWER OUTPUT: +27.5 dBm TYP. HIGH THIRD ORDER I.P.: +39 DBm (TYP.) MODERTE NOISE FIGURE: 5.2 dB (TYP.) GaAs FET AMPLIFIER Description The PA512 0.5 watt RF power amplifier is a discrete
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PA512
SMPA512
MIL-STD-883
PA512
CPA512
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MAAM-007502-CPA512
Abstract: MAAM-007502-SPA512 PA512
Text: PA512 / SPA512 Cascadable Amplifier 10 to 500 MHz Rev. V2 Features • • • • Product Image HIGH POWER OUTPUT: +27.5 dBm TYP. HIGH THIRD ORDER I.P.: +39 DBm (TYP.) MODERTE NOISE FIGURE: 5.2 dB (TYP.) GaAs FET AMPLIFIER Description The PA512 0.5 watt RF power amplifier is a discrete
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PA512
SPA512
MIL-STD-883
PA512
MAAM-007502-SPA512
MAAM-007502ed
MAAM-007502-CPA512
MAAM-007502-SPA512
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Untitled
Abstract: No abstract text available
Text: P/N 1000-10-10-25-A3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 10 - 1000 MHz 10 Watts Gain: 25 dB Voltage: 24 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 10 Watts cw minimum Frequency Range 10 - 1000 MHz
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1000-10-10-25-A3
1000-10-10-25-A3
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Untitled
Abstract: No abstract text available
Text: P/N 1200-10-10-25-A3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 10 - 1200 MHz 10 Watts Gain: 25 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 10 Watts cw minimum Frequency Range 10 - 1200 MHz
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1200-10-10-25-A3
1200-10-10-25-A3
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WNMP1033
Abstract: No abstract text available
Text: RF AMPLIFIER MODEL BXMP1033 Medium Power Amplifier Available as: Features ! ! ! ! WNMP1033, 10 Pin .625” Sq. Gullwing Surface-Mount SG4 BXMP1033, SMA Connectorized Housing Typical Intermodulation Performance at 25 º C High Output Power: +30.5 dBm Typical
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BXMP1033
WNMP1033,
BXMP1033,
WNMP1033
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Untitled
Abstract: No abstract text available
Text: P100-1215 100 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P100-1215 is a 100 Watt 960-1215 MHz pallet Amplifier Features: • 100 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (10 Watts Input Power) LDMOS Technology 24-36V operation
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P100-1215
P100-1215
4-36V
1215MHz
117mm)
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ATT 47
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
ATT 47
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
jmc 5201
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