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    RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Search Results

    RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER AMPLIFIER DESIGN WITH S-PARAMETERS MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MRF5003

    Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors
    Text: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF5003/D MRF5003 MRF5003 MRF5003/D* "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors PDF

    500 watts amplifier schematic diagram pcb layout

    Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
    Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a


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    AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor PDF

    MRF5007

    Abstract: AN211A AN215A AN721 430B-01 motorola an721 application
    Text: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    MRF5007/D MRF5007 MRF5007 MRF5007/D* AN211A AN215A AN721 430B-01 motorola an721 application PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 19 dB typ. @ 1000 MHz 0P1 dB: 14 dBm typ. @ 2 GHz Input and output impedance: 50 Ω nominal


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    SKY65016-214LF: J-STD-020 SKY65016 PDF

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    Abstract: No abstract text available
    Text: DATA SHEET SKY65016-214LF: InGaP General-Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 18 dB typ. @ 900 MHz High output 3rd order intercept: 30 dBm typ. 0P1 dB: 14 dBm typ. @ 2 GHz


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    SKY65016-214LF: J-STD-020 SKY65016 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65016-214LF: InGaP General Purpose Amplifier LF–3 GHz Features ● ● ● ● ● ● ● ● Functional Block Diagram Broadband: LF–3 GHz Small signal gain: 18 dB typ. @ 900 MHz High output 3rd order intercept: +30 dBm typ. 0P1 dB: +14 dBm typ. @ 2 GHz


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    SKY65016-214LF: J-STD-020 SKY65016 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


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    MRF5015/D MRF5015 MRF5015/D* PDF

    08055C104KAT2A

    Abstract: 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR
    Text: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451 – DECEMBER 2004 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain – 210 MHz Gain Bandwidth Product


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    THS4631 SLOS451 08055C104KAT2A 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR PDF

    Untitled

    Abstract: No abstract text available
    Text: AH202 1W High Linearity Amplifier Product Features Product Description • 50 – 2200 MHz The AH202 is a 1-Watt driver amplifier that offers excellent dynamic range in a low-cost, lead-free/RoHScompliant 6x6 mm 28-pin QFN surface-mount package. This device provides its optimum P1dB and OIP3


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    AH202 AH202 28-pin 1-800-WJ1-4401 PDF

    AH201

    Abstract: 68 4401 JESD22-A114 J-STD-020A LLQ1608 amp 9435 marking code 9435 TOKO 707 WJ AH201 amplifier
    Text: AH201 The Communications Edge TM Medium Power, High Linearity Amplifier Product Features • +30 dBm P1dB • +47 dBm Output IP3 • 17 dB Gain @ 900 MHz • MTBF >100 Years • Single Positive Supply • Internally Matched • 24dBm IS-95 Channel Power @ -45dBc ACPR


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    AH201 24dBm IS-95 -45dBc AH201 1-800-WJ1-4401 68 4401 JESD22-A114 J-STD-020A LLQ1608 amp 9435 marking code 9435 TOKO 707 WJ AH201 amplifier PDF

    hf class AB power amplifier mosfet

    Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
    Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136/D MRF136 hf class AB power amplifier mosfet Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973 PDF

    SBOA035

    Abstract: OPA655 SLMA004 15-V OPA627 OPA637 THS4601 THS4601CD THS4601CDDA THS4601ID
    Text: THS4601 SLOS388A – OCTOBER 2001 – REVISED DECEMBER 2001 WIDEBAND, FET-INPUT OPERATIONAL AMPLIFIER FEATURES D Gain Bandwidth Product: 180 MHz D Slew Rate: 100 V/µs D Maximum Input Bias Current: 100 pA D Input Voltage Noise: 5.4 nV/√Hz D Maximum Input Offset Voltage: 4 mV


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    THS4601 SLOS388A THS4601 SBOA035 OPA655 SLMA004 15-V OPA627 OPA637 THS4601CD THS4601CDDA THS4601ID PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37A73 SLASE39 – MAY 2014 TRF37A73 1-6000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37A73 is packaged in a 2.00mm x 2.00mm


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    TRF37A73 SLASE39 TRF37A73 PDF

    15-V

    Abstract: OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR KOA ELECTRONICS CF
    Text: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451A – DECEMBER 2004 – REVISED MARCH 2005 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain


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    THS4631 SLOS451A 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR KOA ELECTRONICS CF PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37A75 SLOS871 – MAY 2014 TRF37A75 40-6000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37A75 is packaged in a 2.00mm x 2.00mm


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    TRF37A75 SLOS871 TRF37A75 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37B75 SLASE21 – MAY 2014 TRF37B75 40-4000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37B75 is packaged in a 2.00mm x 2.00mm


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    TRF37B75 SLASE21 TRF37B75 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37A73 SLASE39 – MAY 2014 TRF37A73 1-6000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37A73 is packaged in a 2.00mm x 2.00mm


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    TRF37A73 SLASE39 TRF37A73 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37D73 SLASE43 – MAY 2014 TRF37D73 1-6000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37D73 is packaged in a 2.00mm x 2.00mm


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    TRF37D73 SLASE43 TRF37D73 PDF

    15-V

    Abstract: OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR
    Text: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451A – DECEMBER 2004 – REVISED MARCH 2005 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain


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    THS4631 SLOS451A 15-V OPA627 OPA656 OPA657 THS4601 THS4631 THS4631D THS4631DDA THS4631DR PDF

    047w

    Abstract: No abstract text available
    Text: D−8 DDA−8 THS4631 DGN−8 www.ti.com SLOS451A – DECEMBER 2004 – REVISED MARCH 2005 HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER FEATURES • • • • • • • • • • DESCRIPTION High Bandwidth: – 325 MHz in Unity Gain


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    THS4631 SLOS451A THS4631 047w PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37C75 SLASE22 – MAY 2014 TRF37C75 40-4000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37C75 is packaged in a 2.00mm x 2.00mm


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    TRF37C75 SLASE22 TRF37C75 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37C73 SLASE42 – MAY 2014 TRF37C73 1-6000 MHz RF Gain Block 1 Features 3 Description • • • • • • • • • • The TRF37C73 is packaged in a 2.00mm x 2.00mm


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    TRF37C73 SLASE42 TRF37C73 PDF

    AM79C433

    Abstract: MX1L
    Text: K Jiä / U ^ U S e m i c o n d u c t o r s 900-MHz ISM Band Receiver Description The receiver IC U2762B-B is specifically designed for cordless telephone applications in the 900-MHz ISM band. It is manufactured using TEMIC’s advanced UHF process. The IC consists of a 900-MHz RF amplifier and


    OCR Scan
    900-MHz U2762B-B U2763B-B U2781B, AM79C432A AM79C433. D-74025 27-Feb-98 AM79C433 MX1L PDF

    4093 motorola

    Abstract: AN 8054 8054 transistor 1075-1 Transistor Motorola motorola 4093
    Text: MOTOROLA Order this document by MRFIC0904/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0904 900 MHz G a A s T w o-Stage Driver Amplifier The MRFIC0904 is an integrated driver amplifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes


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    MRFIC0904/D MRFIC0904 2PHX34723Q-0 4093 motorola AN 8054 8054 transistor 1075-1 Transistor Motorola motorola 4093 PDF