RF POWER AMPLIFIER MODULE Search Results

RF POWER AMPLIFIER MODULE Result Highlights (5)

Part	Manufacturer	Description
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4162F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4206F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 500V (High voltage PWM DC brushless motor driver)
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25

RF POWER AMPLIFIER MODULE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
gsm booster circuit Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060 Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers	Original	PDF	SG1009Q42007 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit mrf373al u880 RF MODULATORS mrf9030n MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
Untitled Abstract: No abstract text available Text: Changing the Economics of Space Features •• Single-stage 2 watts or two-stage (4 watts) amplifier design utilizing discrete RF GaAs FET transistors providing linear RF output power •• 2 W amplifier is a single module configuration housing the DC power supply and RF amplifier	Original	PDF	2009-certified
MMM6029 Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular	Original	PDF	SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Untitled Abstract: No abstract text available Text: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for	Original	PDF	RF5198 RF5184 RF5184 RF5198) RF5184)
AM020331SF-2D Abstract: mhz rf amplifier module class a power amplifier Text: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier	Original	PDF	AM020331SF-2D AM020331SF-2D mhz rf amplifier module class a power amplifier
S-AU82VL Abstract: TOSHIBA RF Power Module 5-53P Text: S-AU82VL TOSHIBA RF POWER AMPLIFIER MODULE S-AU82VL ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AU82VL Po60W VDD12 VDD16 S-AU82VL TOSHIBA RF Power Module 5-53P
S-AU83H Abstract: 5-53P Text: S-AU83H TOSHIBA RF POWER AMPLIFIER MODULE S-AU83H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AU83H Po32W VDD12 VDD16 -40oducts S-AU83H 5-53P
S-AV35 Abstract: RF power amplifier 10mW RF Power Amplifier Module Text: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AV35 S-AV35 RF power amplifier 10mW RF Power Amplifier Module
S-AU93 Abstract: 5-53P Text: S-AU93 TOSHIBA RF POWER AMPLIFIER MODULE S-AU93 ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AU93 Po60W VDD12 VDD16 S-AU93 5-53P
S-AV33 Abstract: 5-53P Text: S-AV33 TOSHIBA RF POWER AMPLIFIER MODULE S-AV33 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AV33 Po32W VDD12 VDD16 S-AV33 5-53P
S-AU82L Abstract: SAU82L 5-53P Text: S-AU82L TOSHIBA RF POWER AMPLIFIER MODULE S-AU82L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AU82L Po60W VDD12 VDD16 -40oducts S-AU82L SAU82L 5-53P
S-AU82H Abstract: 5-53P Text: S-AU82H TOSHIBA RF POWER AMPLIFIER MODULE S-AU82H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AU82H Po60W VDD12 VDD16 -40oducts S-AU82H 5-53P
TOSHIBA RF Power Module S-AV36 Abstract: S-AV36 toshiba S-AV36 sav36 5-53P VDD12 Text: S-AV36 TOSHIBA RF POWER AMPLIFIER MODULE S-AV36 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :80W Min. ･Power Gain :32.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AV36 Po60W VDD12 VDD16 TOSHIBA RF Power Module S-AV36 S-AV36 toshiba S-AV36 sav36 5-53P
toshiba S-AV32 Abstract: S-AV32 60W VHF circuit RF amplifier 5-53P Text: S-AV32 TOSHIBA RF POWER AMPLIFIER MODULE S-AV32 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AV32 Po60W VDD12 VDD16 toshiba S-AV32 S-AV32 60W VHF circuit RF amplifier 5-53P

S-AV35 Abstract: "RF Power Amplifier" RF power amplifier 10mW Text: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AV35 Po45W VDD12 VDD16 S-AV35 "RF Power Amplifier" RF power amplifier 10mW
S-AU83L Abstract: 5-53P "power amplifier" sau83l Text: S-AU83L TOSHIBA RF POWER AMPLIFIER MODULE S-AU83L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION	Original	PDF	S-AU83L Po32W VDD12 VDD16 -40oducts S-AU83L 5-53P "power amplifier" sau83l
Untitled Abstract: No abstract text available Text: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V	Original	PDF	RF3163 RF3164 RF3164 IS-95/CDMA RF3163
TOSHIBA RF Power Module Abstract: No abstract text available Text: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power	Original	PDF	S-AU57 TOSHIBA RF Power Module
Untitled Abstract: No abstract text available Text: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power	Original	PDF
S-AV33A Abstract: S-AV33 5-53P S-AU82AL Text: S-AV33A TOSHIBA RF POWER AMPLIFIER MODULE S-AV33A FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 28 dB Min. ･Total Efficiency: 45% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 10 A, ZG = ZL = 50Ω) CHARACTERISTICS	Original	PDF	S-AV33A S-AV33A S-AV33 5-53P S-AU82AL
sav40 Abstract: S-AV40 Text: S-AV40 TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 34.7 dB Min. ･Total Efficiency: 40% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 8 A, ZG = ZL = 50Ω) CHARACTERISTICS	Original	PDF	S-AV40 sav40 S-AV40
POT1 10T R1K Abstract: AC00 DS1870 DS1870E-010 J-STD-020A pin diagram of bf 494 transistor Text: Rev 1; 5/04 LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s	Original	PDF	DS1870 256-position DS1870s. POT1 10T R1K AC00 DS1870E-010 J-STD-020A pin diagram of bf 494 transistor
s-av6 Abstract: RF Power Amplifier Module toshiba tv schematic toshiba rf module vHF amplifier module s-av6 SAV6 Text: TOSHIBA S-AV6 TOSHIBA RF POWER AMPLIFIER MODULE S-AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE CHARACTERISTIC Frequency Range Output Power Power Gain Total Efficiency Input VSWR Harmonics Unit in mm SYMBOL TEST CONDITION frange Po Gp — VT VSWRin HRM Pi = 200mW	OCR Scan	PDF	200mW s-av6 RF Power Amplifier Module toshiba tv schematic toshiba rf module vHF amplifier module s-av6 SAV6
s-av7 Abstract: No abstract text available Text: TOSHIBA S-AV7 TOSHIBA RF POWER AMPLIFIER MODULE < ;. ä v 7 VHF HAM FM RF POWER AMPLIFIER MODULE CHARACTERISTIC Frequency Range Output Power Power Gain Total Efficiency Input VSWR Harmonics SYM BO L frange Po G? VT VSW Rin Unit in mm T EST CONDITION — Pi = 200mW	OCR Scan	PDF	200mW s-av7

RF POWER AMPLIFIER MODULE Search Results

RF POWER AMPLIFIER MODULE Result Highlights (5)

RF POWER AMPLIFIER MODULE Datasheets Context Search

gsm booster circuit

Untitled

MMM6029

Untitled

AM020331SF-2D

S-AU82VL

S-AU83H

S-AV35

S-AU93

S-AV33

S-AU82L

S-AU82H

TOSHIBA RF Power Module S-AV36

toshiba S-AV32

S-AV35

S-AU83L

Untitled

TOSHIBA RF Power Module

Untitled

S-AV33A

sav40

POT1 10T R1K

s-av6

s-av7