MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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NTE475
Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz
Text: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE475
NTE475
300MHz.
100mA,
100MHz
100kHz
175MHz
m21 sot23 transistor
RF NPN POWER TRANSISTOR 100MHz
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
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RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
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mos 4069
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
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RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
Oct2011
mos 4069
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w amplifier 30mhz
Abstract: 1N5362
Text: VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
w amplifier 30mhz
1N5362
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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balun 50 ohm
Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
balun 50 ohm
10k trimpot
mrf154 amplifier
wl gore
1N4148
1N5362
2204B
MRF154
trifilar
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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Untitled
Abstract: No abstract text available
Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF161
150MHz
30MHz,
150MHz,
MRF151
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VRF154FL
Abstract: MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
MRF154
1N5362
2204B
VRF154
trifilar
ATC 700E
MP170
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arco mica trimmer
Abstract: 1N4148 1N5362 2204B MRF154 VRF154FL
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
arco mica trimmer
1N4148
1N5362
2204B
MRF154
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VRF154
Abstract: No abstract text available
Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
VRF154
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VK200-4B
Abstract: No abstract text available
Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF161
150MHz
30MHz,
150MHz,
MRF151
VK200-4B
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10k trimpot
Abstract: 10k trimpot vertical thermistor 10k ohm arco mica trimmer MRF154 equivalent mica trimmer gore MC1723 MC1723 application notes mrf154
Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
10k trimpot
10k trimpot vertical
thermistor 10k ohm
arco mica trimmer
MRF154 equivalent
mica trimmer
gore
MC1723
MC1723 application notes
mrf154
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VRF154
Abstract: arco mica trimmer wound trifilar 10 turns
Text: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
100MHz
30MHz,
MRF154
VRF154
arco mica trimmer
wound trifilar 10 turns
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transistor w 431
Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features
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T1G6001528-Q3
T1G6001528-Q3
transistor w 431
transistor 431 smd
TIC 122 Transistor
transistor SE 431
w 431 transistor
transistor je 123
6 pin TRANSISTOR SMD CODE tm
transistor+431+smd
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1812C105KAT2A
Abstract: No abstract text available
Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems – General Purpose RF Power – Jammers – Radar – Professional radio systems – WiMAX – Wideband ampliiers
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T1G6000528-Q3
T1G6000528-Q3
1812C105KAT2A
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transistor SMD p90
Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features
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T1G6001528-Q3
T1G6001528-Q3
transistor SMD p90
transistor 431 smd
smd transistor 901
100A150JW500XC
EAR99
RO3203
S2834
431 TRANSISTOR smd
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common emitter amplifier
Abstract: NTE16002
Text: NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
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NTE16002
175MHz
common emitter amplifier
NTE16002
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GP 809 DIODE
Abstract: GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
GP 809 DIODE
GP 007 DIODE
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GP 809 DIODE
Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
Nov2011
GP 809 DIODE
GP 839 DIODE
4406 mosfet
diode zener 7.2v
RD01MUS2B-101
gp 520 diode
diode gp 805
mosfet vhf power amplifier
GP 007 DIODE
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2SC1070
Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low
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OCR Scan
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2SC1070
s parameters RF NPN POWER TRANSISTOR 100MHz
Tma UHF
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