RF POWER TRANSISTOR NPN 3GHZ Search Results

RF POWER TRANSISTOR NPN 3GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF POWER TRANSISTOR NPN 3GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFP650 Abstract: No abstract text available Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Jan-08-2004 BFP650	PDF
PH marking code Abstract: No abstract text available Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 PH marking code	PDF
Untitled Abstract: No abstract text available Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343	PDF
marking r5s Abstract: No abstract text available Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Oct-22-2002 marking r5s	PDF
transistor 1T Abstract: BFP650 equivalent Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Jul-01-2003 transistor 1T BFP650 equivalent	PDF
BFP650 noise figure Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650 Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 curr26 Mar-27-2003 BFP650 noise figure data sheet germanium diode germanium transistors NPN npn germanium BFP650	PDF
gummel Abstract: oscilators BFP650 Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Oct-13-2003 gummel oscilators BFP650	PDF
80mAF Abstract: 6069 marking Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability	Original	BFP650 VPS05605 OT343 Aug-16-2004 80mAF 6069 marking	PDF
pin diagram of bf 494 transistor Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346 Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability	Original	VPW05980 Q62702-F1721 SCT-595 Sep-09-1998 pin diagram of bf 494 transistor TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346	PDF
BFP650 Abstract: BGA420 T-25 Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology	Original	BFP650 OT343 BFP650 BGA420 T-25	PDF
RBS 3000 Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology	Original	BFP650 OT343 RBS 3000 BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON	PDF
RBS 3000 Abstract: 1g28 Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology	Original	BFP650 OT343 RBS 3000 1g28	PDF
093.266 Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490 Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line	Original	VPW05980 SCT-595 200mA Nov-17-2000 093.266 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490	PDF
BFP450 Abstract: BGA420 Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability	Original	BFP450 OT343 BFP450 BGA420	PDF

Untitled Abstract: No abstract text available Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers Compression point P-1dB = +19 dBm at 1.8 GHz 4 maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz Transition frequency fT = 24 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 50Ohm -j100 Nov-17-2000	PDF
TA 490 Abstract: SCT-595 490 transistor 09326 Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line	Original	VPW05980 SCT-595 200mA Dec-13-1999 TA 490 SCT-595 490 transistor 09326	PDF
Untitled Abstract: No abstract text available Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability	Original	BFP450 VPS05605 OT343	PDF
BFP450 Abstract: ESD spice Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability	Original	BFP450 VPS05605 OT343 50Ohm -j100 Aug-20-2001 BFP450 ESD spice	PDF
transistor s parameters noise Abstract: BF 145 transistor Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 50Ohm -j100 Mar-07-2001 transistor s parameters noise BF 145 transistor	PDF
Q62702-F1590 Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746 Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability	Original	VPS05605 Q62702-F1590 OT-343 50Ohm -j100 Sep-09-1998 Q62702-F1590 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746	PDF
thermal simulation of IC package Abstract: VPS05605 24165V Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 50Ohm -j100 Dec-13-1999 thermal simulation of IC package VPS05605 24165V	PDF
142001 Abstract: BFP490 SCT595 SCT-595 Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line	Original	BFP490 VPW05980 SCT595 200mA Aug-14-2001 142001 BFP490 SCT595 SCT-595	PDF
093.266 Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502 Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability	OCR Scan	Q62702-F1721 SCT-595 200mA 093.266 pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502	PDF
pin diagram of bf 494 transistor Abstract: siemens products transistor Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability	OCR Scan	Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor	PDF

Privacy Settings

RF POWER TRANSISTOR NPN 3GHZ Search Results

RF POWER TRANSISTOR NPN 3GHZ Result Highlights (5)

RF POWER TRANSISTOR NPN 3GHZ Datasheets Context Search

BFP650

PH marking code

Untitled

marking r5s

transistor 1T

BFP650 noise figure

gummel

80mAF

pin diagram of bf 494 transistor

BFP650

RBS 3000

RBS 3000

093.266

BFP450

Untitled

TA 490

Untitled

BFP450

transistor s parameters noise

Q62702-F1590

thermal simulation of IC package

142001

093.266

pin diagram of bf 494 transistor