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    RF POWER TRANSISTOR NPN 3GHZ Search Results

    RF POWER TRANSISTOR NPN 3GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR NPN 3GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP650

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Jan-08-2004 BFP650

    PH marking code

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 PH marking code

    Untitled

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343

    marking r5s

    Abstract: No abstract text available
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Oct-22-2002 marking r5s

    transistor 1T

    Abstract: BFP650 equivalent
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Jul-01-2003 transistor 1T BFP650 equivalent

    BFP650 noise figure

    Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 curr26 Mar-27-2003 BFP650 noise figure data sheet germanium diode germanium transistors NPN npn germanium BFP650

    gummel

    Abstract: oscilators BFP650
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Oct-13-2003 gummel oscilators BFP650

    80mAF

    Abstract: 6069 marking
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Aug-16-2004 80mAF 6069 marking

    pin diagram of bf 494 transistor

    Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability


    Original     		PDF VPW05980 Q62702-F1721 SCT-595 Sep-09-1998 pin diagram of bf 494 transistor TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346

    BFP650

    Abstract: BGA420 T-25
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology


    Original     		PDF BFP650 OT343 BFP650 BGA420 T-25

    RBS 3000

    Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650 OT343 RBS 3000 BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON

    RBS 3000

    Abstract: 1g28
    Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original     		PDF BFP650 OT343 RBS 3000 1g28

    093.266

    Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Nov-17-2000 093.266 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490

    BFP450

    Abstract: BGA420
    Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability


    Original     		PDF BFP450 OT343 BFP450 BGA420

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3  For medium power amplifiers  Compression point P-1dB = +19 dBm at 1.8 GHz 4 maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz  Transition frequency fT = 24 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Nov-17-2000

    TA 490

    Abstract: SCT-595 490 transistor 09326
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Dec-13-1999 TA 490 SCT-595 490 transistor 09326

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF BFP450 VPS05605 OT343

    BFP450

    Abstract: ESD spice
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF BFP450 VPS05605 OT343 50Ohm -j100 Aug-20-2001 BFP450 ESD spice

    transistor s parameters noise

    Abstract: BF 145 transistor
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Mar-07-2001 transistor s parameters noise BF 145 transistor

    Q62702-F1590

    Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability


    Original     		PDF VPS05605 Q62702-F1590 OT-343 50Ohm -j100 Sep-09-1998 Q62702-F1590 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746

    thermal simulation of IC package

    Abstract: VPS05605 24165V
    Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 50Ohm -j100 Dec-13-1999 thermal simulation of IC package VPS05605 24165V

    142001

    Abstract: BFP490 SCT595 SCT-595
    Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF BFP490 VPW05980 SCT595 200mA Aug-14-2001 142001 BFP490 SCT595 SCT-595

    093.266

    Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA 093.266 pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502

    pin diagram of bf 494 transistor

    Abstract: siemens products transistor
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor