HSWA2-30DR
Abstract: HSWA2 RF switch negative voltage generator MAX8878 33uF capacitor
Text: BIASING OF HSWA2-30DR+ SPDT SWITCH WITH A 5V SUPPLY VOLTAGE The HSWA2-30DR+ switch uses a patented CMOS technology and operates with single positive supply voltage from 2.7V to 3.3V. This model has a patent pending low noise negative voltage generator which produces internally the negative supply voltage
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HSWA2-30DR+
MAX8878
HSWA2-30DR
HSWA2
RF switch negative voltage generator
MAX8878
33uF capacitor
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kt812
Abstract: No abstract text available
Text: Order this document by MRFIC1859/D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the
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MRFIC1859/D
MRFIC1859
GSM900/DCS1800
MRFIC1859
kt812
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TQFP-32EP
Abstract: transistor D 1710 TRANSISTOR D 1785 MC33170 MRFIC1859 MRFIC1859R2 D3G 21 t8 ballast circuits T-4718 Angle dimension representation in tables as per ASME
Text: Order this document by MRFIC1859/D MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual–band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on–chip spur free voltage generator reduces the number of external components by eliminating the
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MRFIC1859/D
MRFIC1859
MRFIC1859
GSM900/DCS1800
TQFP-32EP
transistor D 1710
TRANSISTOR D 1785
MC33170
MRFIC1859R2
D3G 21
t8 ballast circuits
T-4718
Angle dimension representation in tables as per ASME
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Untitled
Abstract: No abstract text available
Text: MRFIC1859 DEVICE ON LIFETIME BUY Freescale Semiconductor, Inc. Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dualband, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The onchip spur free voltage generator reduces the number of external components by eliminating the
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MRFIC1859
MRFIC1859
GSM900/DCS1800
IP405,
MRFIC1859/D
04JUL02
04JAN02
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Untitled
Abstract: No abstract text available
Text: INSTRUCTION MANUAL Model 1249B NTSC GENERATOR TEST INSTRUMENT SAFETY WARNING Normal use of test equipment exposes you to a certain amount of danger from electrical shock because testing must sometimes be performed where exposed voltage is present. An electrical shock causing 10 milliamps of current to pass through the heart will stop most human
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1249B
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motorola zc 40
Abstract: motorola zc IC TA 7089 P
Text: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819/D
MRFIC1819
DCS1800/PCS1900
MRFIC1819/D
motorola zc 40
motorola zc
IC TA 7089 P
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IC TA 7089 equivalent
Abstract: IC TA 7089 P R13C "RF Power Amplifier" motorola 1w zener diodes Zener diode 2.2X 948L MC33170 MMSZ4689T1 MRFIC1819
Text: Order this document by MRFIC1819/D MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819/D
MRFIC1819
MRFIC1819
DCS1800/PCS1900
IC TA 7089 equivalent
IC TA 7089 P
R13C
"RF Power Amplifier"
motorola 1w zener diodes
Zener diode 2.2X
948L
MC33170
MMSZ4689T1
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Untitled
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919/D
MRFIC0919
GSM900
MRFIC0919/D
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KC810
Abstract: R13C MRFIC0919R2 negative voltage generate circuit 948L GSM900 MC33170 MMSZ4689T1 MRFIC0919 MTSF3N02HD
Text: Order this document by MRFIC0919/D MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919/D
MRFIC0919
MRFIC0919
GSM900
KC810
R13C
MRFIC0919R2
negative voltage generate circuit
948L
MC33170
MMSZ4689T1
MTSF3N02HD
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IC TA 7089
Abstract: IC TA 7089 equivalent IC TA 7089 P motorola application notES
Text: Order this document by MRFIC1819/D MRFIC1819 Advance Information 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819/D
MRFIC1819
DCS1800/PCS1900
MRFIC1819/D
IC TA 7089
IC TA 7089 equivalent
IC TA 7089 P
motorola application notES
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Angle dimension representation in tables as per ASME
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D MRFIC0919 Advance Information 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A
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MRFIC0919/D
MRFIC0919
GSM900
MRFIC0919/D
Angle dimension representation in tables as per ASME
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Untitled
Abstract: No abstract text available
Text: Order this document by MRFIC0919/D Freescale Semiconductor, Inc. MRFIC0919 LAST ORDER 04JUL02 LAST SHIP 04JAN02 3.6 V GSM GaAs Integrated DEVICE ON LIFETIME BUY Freescale Semiconductor, Inc. Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the
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04JUL02
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MRFIC0919
GSM900
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Zener diode 2.2X
Abstract: opamp 356 R13C motorola zc 948L GSM900 MC33170 MMSZ4689T1 MRFIC0919 MRFIC0919R2
Text: Order this document by MRFIC0919/D Freescale Semiconductor, Inc. MRFIC0919 LAST ORDER 04JUL02 LAST SHIP 04JAN02 3.6 V GSM GaAs Integrated Freescale Semiconductor, Inc. DEVICE ON LIFETIME BUY Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the
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MRFIC0919/D
MRFIC0919
04JUL02
04JAN02
MRFIC0919
GSM900
con80217.
Zener diode 2.2X
opamp 356
R13C
motorola zc
948L
MC33170
MMSZ4689T1
MRFIC0919R2
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stacked transistor shunt switch
Abstract: RF 107 CMOS Stacked RF M21 mosfet matrix m21 SPDT stacked FET r01n Peregrine MRF MOSFET
Text: CMOS SOS SWITCHES DESIGN CMOS SOS Switches Offer Useful Features, High Integration Understanding the basic theory and characteristics underlying CMOS SOS switch technology opens the door to numerous RF and microwave applications. s witching RF and microwave signals is a fundamental function in all radio applications. Accordingly, there are a great
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DC bias of gaas FET
Abstract: RF switch negative voltage generator "RF Switch" GaAs FET chip AN18 SPDT FETs integrated switch negative voltage generator
Text: Application Note AN18 RF Switch Performance Advantages of UltraCMOS Technology over GaAs Technology Introduction Summary: In RF systems, switches are as common as amplifiers, mixers, and PLLs. While many technologies yield good active RF devices, few yield good RF switches. Superior switches are
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Order number: MPC9895 Rev 0, 04/2003 TECHNICAL DATA Low Voltage PLL Intelligent Dynamic Clock IDCS Switch The MPC9895 is a 3.3V compatible, PLL based intelligent dynamic clock switch and generator specifically designed for redundant clock distribution systems. The device receives two LVCMOS clock signals and generates 12 phase
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MPC9895
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Product Preview Low Voltage PLL Intelligent Dynamic Clock IDCS Switch Freescale Semiconductor, Inc. 3 The MPC9895 is a 3.3V compatible, PLL based intelligent dynamic clock switch and generator specifically designed for redundant clock distribution systems. The device receives two LVCMOS clock signals and
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MPC9895/D
MPC9895
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9
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PE42520
PE42520
PE42552
DOC-12714-3
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AT1511
Abstract: AT1511R SSOP20 VG10 VG20 HEMT marking P
Text: AT1511 Preliminary product Information FET BIAS CONTROLLER AND TONE DETECTION Features Description •Provides bias for GaAs and HEMT FETs •Drives up to three FETs •Dynamic FET protection •Drain current set by external resistor •Regulated negative rail generator requires
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AT1511
22kHz
AT1511
20-pin
AT1511R
SSOP20
VG10
VG20
HEMT marking P
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Untitled
Abstract: No abstract text available
Text: Advance Information PE42521 UltraCMOS SPDT RF Switch 100 MHz - 13 GHz Product Description The PE42521 RF switch is designed for use in Test/ ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 100 MHz
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PE42521
PE42521
PE42552
DOC-12814-2
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42542 UltraCMOS SP4T RF Switch 9 kHz–18 GHz Product Description The PE42542 is a HaRP technology-enhanced absorptive SP4T RF switch designed for use in Test/ ATE, microwave and other wireless applications. This broadband general purpose switch maintains excellent
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PE42542
PE42542
DOC-12214-4
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42543 UltraCMOS SP4T RF Switch 9 kHz–18 GHz Product Description The PE42543 is a HaRP technology-enhanced absorptive SP4T RF switch designed for use in Test/ ATE, microwave and other wireless applications. This broadband general purpose switch is a pin-compatible
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PE42543
PE42543
PE42542
DOC-12314-2
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PE42540
Abstract: PE42540LGBC-Z PE42540LGBC
Text: Product Specification PE42540 UltraCMOS SP4T RF Switch 10 Hz - 8 GHz Product Description Features The PE42540 is a HaRP technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and
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PE42540
PE42540
PE42540LGBC-Z
PE42540LGBC
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42540 UltraCMOS SP4T RF Switch 10 Hz – 8 GHz Product Description Features The PE42540 is a HaRP technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and
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PE42540
PE42540
DOC-32914-2
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