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    RF TRANSISTOR 10GHZ LOW NOISE Search Results

    RF TRANSISTOR 10GHZ LOW NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 10GHZ LOW NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1921A MCH4014 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1921A MCH4014 10GHz A1921-11/11

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1922 MCH4016 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1922 MCH4016 10GHz, 10GHz A1922-10/10

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1912 MCH4017 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1912 MCH4017 100mA, 10GHz, 10GHz A1912-9/9

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1921A MCH4014 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1921A MCH4014 10GHz A1921-11/11

    tl 0741

    Abstract: No abstract text available
    Text: Ordering number : ENA1911 MCH4015 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1911 MCH4015 100mA, 10GHz, 10GHz A1911-9/9 tl 0741

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1910A CPH6021 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single CPH6 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=14dB typ (f=1GHz) Halogen free compliance


    Original     		PDF ENA1910A CPH6021 100mA, 10GHz, 10GHz 250mm2 A1910-12/12

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation


    Original     		PDF ENA1120A 2SC5646A 10GHz A1120-9/9

    Untitled

    Abstract: No abstract text available
    Text: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F:

    Untitled

    Abstract: No abstract text available
    Text: BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720 OT343 OT343-PO OT343-FP BFP720: OT323-TP

    BFP450

    Abstract: RF TRANSISTOR 10GHZ 434mhz RF TRANSISTOR 10GHZ low noise BFP740 TR119 MURATA LQW15A LQW15A RF Bipolar Transistor lna x band
    Text: Technical Report, 2009-Feb-11 Technical Report High OIP3 LNA using BFP450 for 434MHz ISM band Application Technical Report TR119 Device: BFP450 Application: High-OIP3 LNA for 434MHz ISM Band Applications


    Original     		PDF 2009-Feb-11 BFP450 434MHz TR119 BFP450 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise BFP740 TR119 MURATA LQW15A LQW15A RF Bipolar Transistor lna x band

    10GHz oscillator

    Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ

    RF TRANSISTOR 10GHZ

    Abstract: BFP720 RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking
    Text: D at a S h ee t , R ev . 1 . 0 , J an ua ry 2 00 9 B FP 72 0 S i G e :C H e t e r oj u n c t i o n W i d e ba n d R F B i p ol a r Transistor S m a l l S i g n a l D i s c r et e s Edition 2009-01-20 Published by Infineon Technologies AG, 85579 Neubiberg, Germany


    Original     		PDF BFP720 BFP720 OT343-PO OT343 OT343-FP OT323-TP RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU510 BFU510 MSB842 125104/00/04/pp11

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP

    bfp840

    Abstract: LNA ku-band BFP840FESD BFP840F ku-band lnb simulation
    Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840FESD BFP840FESD: bfp840 LNA ku-band BFP840FESD BFP840F ku-band lnb simulation

    Untitled

    Abstract: No abstract text available
    Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP840FESD BFP840FESD:

    transistor 9716

    Abstract: photodiode 10Ghz PIN
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN

    germanium photodiode PIN

    Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
    Text: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, 150mW -18dBm 90V/A MAX3970U/D OC-192 345mm) 864mm) germanium photodiode PIN photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz

    transistor 9716

    Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11

    optical receiver -25dbm 10ghz

    Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
    Text: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, 150mW -18dBm 00V/A MAX3970U/D OC-192 345mm) 864mm) optical receiver -25dbm 10ghz photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716

    RF TRANSISTOR 10GHZ

    Abstract: BFP720F C166 MHz MIPI
    Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F: RF TRANSISTOR 10GHZ BFP720F C166 MHz MIPI

    Untitled

    Abstract: No abstract text available
    Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP720F BFP720F:

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP 726-BFP640ESDE6327 640ESD E6327 XPOSYS gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb