RF TRANSISTOR SOT23 5 Search Results

RF TRANSISTOR SOT23 5 Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF TRANSISTOR SOT23 5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor c 3181 Abstract: ML SOT23 TRANSISTOR 3182 Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage	OCR Scan	650MHz 500MHz FMMTH10 100MHz 500MHz, 300ns. transistor c 3181 ML SOT23 TRANSISTOR 3182	PDF
RF TRANSISTOR SOT23 5 Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10 Text: BFS17A NPN Bipolar Silicon RF Transistor in plastic package SOT23 Attribute Value Configuration UOM NPN Function RF Package SOT23 VCEO max 15 V VCBO max 25 V VEBO max 2.5 V IC max 25 mA 200 mW Ptot max DC current gain Transition frequency min 20 @IE 2 mA @VCE	Original	BFS17A BFR92 BFR93A RF TRANSISTOR SOT23 5 transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10	PDF
SOT23 W1P NXP Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	Original	BFT92 MSB003act R77/02/pp10 SOT23 W1P NXP	PDF
BFR93 application note Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	BFT93 R77/02/pp10 BFR93 application note	PDF
BFT25 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	BFT25 MSB003 R77/02/pp10 BFT25	PDF
BFR91 philips Abstract: No abstract text available Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The	OCR Scan	bbS3T31 BFR93 ON4186) BFT93. BFR91 philips	PDF
BFR520 Abstract: 900MHZ Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.	Original	BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ	PDF
TAG 8907 Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93 Text: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in	OCR Scan	711005b BFT93 BFR93 BFR93A. TAG 8907 lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671	PDF
ice 0565 Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157 Text: THN6501S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6501S is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES	Original	THN6501S OT-23 THN6501S 00GHz 800GHz 000GHz 200GHz 400GHz 600GHz ice 0565 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157	PDF
74299 Abstract: 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V THN6201S Text: THN6201S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6201S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES	Original	THN6201S OT-23 THN6201S 12GHz 800GHz 000GHz 200GHz 400GHz 600GHz 74299 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V	PDF
44606 Abstract: B 13003 121-351 7654 ic pt 2358 THN6301S 76231 pt 2358 56374 57290 Text: THN6301S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6301S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES	Original	THN6301S OT-23 THN6301S 10GHz VCEO00GHz 000GHz 200GHz 400GHz 600GHz 44606 B 13003 121-351 7654 ic pt 2358 76231 pt 2358 56374 57290	PDF
Untitled Abstract: No abstract text available Text: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and	OCR Scan	BFS17 MEA393 MEA397	PDF
Untitled Abstract: No abstract text available Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	OCR Scan	BFT93 BFR93 BFR93A.	PDF
FMMTH10 Abstract: DSA003704 Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz TYPICAL CHARACTERISTICS 200 1.0 V+-=-10V -55°C 50 -55°C - Volts 100°C 0.6 PARTMARKING DETAIL 0.4	Original	FMMTH10 650MHz 500MHz 100MHz 500MHz, FMMTH10 DSA003704	PDF

cq 636 g transistor Abstract: No abstract text available Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.	OCR Scan	BFS17A cq 636 g transistor	PDF
W1p TRANSISTOR Abstract: transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06 Text: P hilips S em iconductors l i 7 1 1 0 f l2 b 0 0 ^^354 3 SÖ H IP H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. DESCRIPTION PIN It is primarily intended or use In RF wideband amplifiers, such as in	OCR Scan	7110fl2b BFT92 BFR92 BFR92A. W1p TRANSISTOR transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06	PDF
transistor w1P Abstract: W1p TRANSISTOR w1p 60 W1p 25 TRANSISTOR w1p npn w1p code w1p 42 Text: b b S 3 T 31 0 Q 2 S 3 6 B 7 7 H « A P X Philips Semiconductors N AMER PHILIPS/D ISCR ETE Product specification L 7 E 1 £ PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	OCR Scan	BFT92 BFR92 BFR92A. transistor w1P W1p TRANSISTOR w1p 60 W1p 25 TRANSISTOR w1p npn w1p code w1p 42	PDF
transistor marking pb 6 sot-23 Abstract: BFS17A Text: Not for new design, this product will be obsoleted soon BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component	Original	BFS17A BFS17AR BFS17AW 2002/95/EC 2002/96/EC OT323 OT-23 transistor marking pb 6 sot-23	PDF
MARKING CODE 618 SOT23 Abstract: MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23 Text: Not for new design, this product will be obsoleted soon BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component	Original	BFR93A/BFR93AR/BFR93AW 2002/95/EC 2002/96/EC OT323 BFR93A BFR93AR 18-Jul-08 MARKING CODE 618 SOT23 MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23	PDF
BFR93AW-GS08 Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035 Text: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC	Original	BFR93A/BFR93AR/BFR93AW 2002/95/EC 2002/96/EC OT323 BFR93A BFR93AR BFR93ed 08-Apr-05 BFR93AW-GS08 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035	PDF
BF1107 Abstract: BF1107W Text: BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions.	Original	BF1107 BF1107 BF1107W	PDF
TS142 Abstract: BFT25 Text: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in	OCR Scan	7110aab BFT25 TS142 BFT25	PDF
BCW66 Abstract: BFS17P E6327 marking code MCs Text: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage	Original	BFS17P VPS05161 BCW66 BFS17P E6327 marking code MCs	PDF
Zener Diode 3v 400mW Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998 Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –	Original	DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998	PDF

RF TRANSISTOR SOT23 5 Search Results

RF TRANSISTOR SOT23 5 Result Highlights (5)

RF TRANSISTOR SOT23 5 Datasheets Context Search

transistor c 3181

RF TRANSISTOR SOT23 5

SOT23 W1P NXP

BFR93 application note

BFT25

BFR91 philips

BFR520

TAG 8907

ice 0565

74299

44606

Untitled

Untitled

FMMTH10

cq 636 g transistor

W1p TRANSISTOR

transistor w1P

transistor marking pb 6 sot-23

MARKING CODE 618 SOT23

BFR93AW-GS08

BF1107

TS142

BCW66

Zener Diode 3v 400mW