Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011L15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L15 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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IB1011L15
IB1011L15
IB1011L15-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S at VCC = 50V, this
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IB1011M190
IB1011M190
IB1011M190-REV-NC-DS-REV-NC
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x-band mmic
Abstract: x-band power amplifier X-band marine radar x-band HPA 3 W S-Band high Power Amplifier 300 watts amplifier s-band x band power amplifiers
Text: RO-P-DS-3007 - - MAAPGM0015-DIE 15W S-Band High Power Amplifier 2.6 – 3.4 GHz Preliminary Information Features ♦ ♦ ♦ ♦ 2.6-3.4 GHz GaAs MMIC HPA 2.6 to 3.4 GHz Operation 15 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation
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RO-P-DS-3007
MAAPGM0015-DIE
MAAPGM0015-Die
x-band mmic
x-band power amplifier
X-band marine radar
x-band HPA 3 W
S-Band high Power Amplifier
300 watts amplifier s-band
x band power amplifiers
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M15HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M15HV is designed for Avionics TACAN systems operating at 960-1215 MHz. Operating at
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ILD0912M15HV
ILD0912M15HV
ILD0912M15HV-REV-NC-DS-REV-NC
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Integra Technologies
Abstract: No abstract text available
Text: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,
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ILD1011M15HV
ILD1011M15HV
ILD1011M15HV-REV-NC-DS-REV-E
Integra Technologies
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bd 142 transistor
Abstract: No abstract text available
Text: Part Number: Integra ILD0506EL350 TECHNOLOGIES, INC. P-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating at 480-610 MHz. Operating at a pulse width of 15ms with
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ILD0506EL350
ILD0506EL350
ILD0506EL350-REV-PR1-DS-REV-NC
bd 142 transistor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2226MH15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226MH15 is designed for S-Band radar systems operating over the
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IB2226MH15
IB2226MH15
IB2226MH15-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over
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IB2731MH110
IB2731MH110
IB2731MH110-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3134M15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The medium power pulsed radar transistor device part number IB3134M15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz.
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IB3134M15
IB3134M15
IB3134M15-REV-NC-DS-REV-D
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MAAP-000079-SMB001
Abstract: MAAP-000079-PKG001 MAAP-000079-PED000 MAAP-000079-SMB004 MAAPGM0079-DIE MAAPGM0079
Text: RoHS Compliant Amplifier, Power, 15W 7.5-10.5 GHz MAAP-000079-PKG001 Rev A Preliminary Datasheet Features ♦ 15 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Primary Applications MAAP-000079 ♦ SatCom
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MAAP-000079-PKG001
MAAP-000079
MAAP-000079-PKG001
MAAP-000079-SMB001
MAAP-000079-PED000
MAAP-000079-SMB004
MAAPGM0079-DIE
MAAPGM0079
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UAA180A
Abstract: TFF3866 UAA180 equivalent TDA3009 tfe11 TCA440 dcf77 low cost TFA2127 AK2124 Siemens TCA440
Text: Product Selection Guide 4Q’00 2000 Copyright Megaxess GmbH Deutschland Megaxess GmbH Deutschland •POB 1370 •15203 Frankfurt Oder •Germany Phone +335 546 2005 •FAX +335 546 3251 •http://www.megaxess.de Table of Contents The Company .… . 3
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TFF3866
UAA180A
TFF3866
UAA180 equivalent
TDA3009
tfe11
TCA440
dcf77 low cost
TFA2127
AK2124
Siemens TCA440
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VARIABLE POWER SUPPLY. 0 - 30V, LM723
Abstract: LM741 audio amplifiers IC LM741 timer circuit diagram lm35 sensor interfacing with adc0808 diagram LM338 TO-3 spice model LM741 AND LM386 Audio Amplifier lm1485 LM1084 spice LF351 op-amp audio equalizer smd code marking 162 sot23-5
Text: Welcome to National Semiconductor’s Summer 2000 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides Package descriptions CD-ROM with complete datasheets, a pdf version of this guide, and other valuable information
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Playstation 3 SERVICE MANUAL
Abstract: sony playstation 3 power supply apqp MANUAL Sony Semiconductor Replacement Handbook sony playstation 1 power supply playstation 3 power supply wafer fab control plan SERVICE MANUAL Playstation 3 apqp statistical process control manual ATMEL 1047
Text: 00 90 ny O pa IS om an C is ed el er m st At egi R Atmel Corporation Quality & Reliability Handbook 1999 is the registered trademark of Atmel Corporation, 2325 Orchard Parkway, San Jose, CA 95131 Rev. 1281A–03/99 Important Notice Atmel Corporation makes no warranty for the use of its products, other than those
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x-band power transistor
Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding
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tlo82
Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil
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I-20089
tlo82
TLO82 datasheet
lm147
lm117 3.3V
JM38510/10901BGA
TLO82 application
lm723
LM338 model SPICE
LM723 pin details
lm842
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LTTS e3
Abstract: gbs transistors
Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,
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3A001
3A002,
LTTS e3
gbs transistors
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"ADE-508-010A"
Abstract: MIL-P-28809A Hitachi DSA0076 HITACHI DIODE HVB14S HVC132 HVD131 HVD132 HVM14 HVM14SR
Text: Hitachi PIN Diodes HITACHI ADE-508-010A 4/20/00 Causions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s
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ADE-508-010A
100MHz
"ADE-508-010A"
MIL-P-28809A
Hitachi DSA0076
HITACHI DIODE
HVB14S
HVC132
HVD131
HVD132
HVM14
HVM14SR
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koa BwR1
Abstract: No abstract text available
Text: Surface Mount Devices www.koaspeer.com www.koaproducts.com Type Size inch mm 1H 0201 (0.6x0.3) 1E 0402 (1.0×0.5) 1J 0603 (1.6×0.8) 2A 0805 (2.0×1.25) 2B 1206 (3.2×1.6) 2E 1210 (3.2×2.6) 2H(W2H) 2010 (5.0×2.5) 3A(W3A) 2512 (6.3×3.1) Tolerance (％)
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RK73H/RK73B
RK73Z
RK73A
RK73G
1/16W
SDT310
SDT101A/SDT101B
RCR50ï
UL1676
RCR50EN
koa BwR1
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SD57045
Abstract: pb97 PD57045S AN1294 GSM1800 GSM900 IS-54 MO-184 PCS1900 PowerSO-10RF
Text: AN1294 APPLICATION NOTE PowerSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE S. Juhel - N. Hamelin 1. ABSTRACT During the last 10 years, as the size of electronic assemblies decreased and their reliability increased, there has been a need across the board for various components which have to be surface mounted.
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AN1294
PowerSO-10RF:
PowerSO-10RF
SD57045
pb97
PD57045S
AN1294
GSM1800
GSM900
IS-54
MO-184
PCS1900
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pb97
Abstract: SD57045 MO-184 PD57045S similar at PD57006 AN1294 GSM1800 GSM900 IS-54 PCS1900
Text: AN1294 APPLICATION NOTE PowerSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE S. Juhel - N. Hamelin 1. ABSTRACT During the last 10 years, as the size of electronic assemblies decreased and their reliability increased, there has been a need across the board for various components which have to be surface mounted.
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AN1294
PowerSO-10RF:
PowerSO-10RF
pb97
SD57045
MO-184
PD57045S
similar at PD57006
AN1294
GSM1800
GSM900
IS-54
PCS1900
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pb97
Abstract: SD57045 MO-184 similar at PD57006 PD57045S AN1294 GSM1800 GSM900 IS-54 PCS1900
Text: AN1294 APPLICATION NOTE PowerSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE S. Juhel - N. Hamelin 1. ABSTRACT During the last 10 years, as the size of electronic assemblies decreased and their reliability increased, there has been a need across the board for various components which have to be surface mounted.
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AN1294
PowerSO-10RF:
PowerSO-10RF
pb97
SD57045
MO-184
similar at PD57006
PD57045S
AN1294
GSM1800
GSM900
IS-54
PCS1900
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RF wafer 15w
Abstract: No abstract text available
Text: WAFER SCALE INTEGRATION DeT | clS3cÌ b ciO QOGDISM 7 % Æ Æ ~ÎË WS57C191B/291B PRELIMINARY WAFERSCALE INTEGRATION, INC. HIGH SPEED 2K x 8 CMQS RPROM KEY FEATURES Ultra-Fast Access Time . Low Power Consumption Pin Compatible with AM27S191/291 and N82S191 Bipolar PROMs
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WS57C191B/291B
AM27S191/291
N82S191
WS57C191B/291B
WS57Ck
7B/21;
WS57C191B-35D
WS57C291B-35T
WS57C191B-45CMB
WS57C191B-45D
RF wafer 15w
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PEC 5099
Abstract: LT1007 LT1037 OP-27 OP-37 N70C
Text: L ir m OP-27/OP-37 TECHNOLOGY |_ow Noise, High Speed Precision Operational Amplifiers F€flTUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ The 0P-27/0P-37 series of operational amplifiers combine outstanding noise performance with excellent precision and
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OP-27/OP-37
OP-37)
0P-27/0P-37
PEC 5099
LT1007
LT1037
OP-27
OP-37
N70C
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lm 741 op amp
Abstract: "Microphone Preamplifiers" VOS TRIM op amp 747 op amp op amp 725 15w audio amplifier circuit diagram CAB6-140-EI IC 741 AMP DATA ic tlo 741 LM 741 op amp single supply
Text: L ir m OP-27/OP-37 TECHNOLOGY |_ow Noise, High Speed Precision Operational Amplifiers F€flTUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ The 0P-27/0P-37 series of operational amplifiers combine outstanding noise performance with excellent precision and
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OP-27/OP-37
OP-37)
0P-27/0P-37
lm 741 op amp
"Microphone Preamplifiers"
VOS TRIM op amp
747 op amp
op amp 725
15w audio amplifier circuit diagram
CAB6-140-EI
IC 741 AMP DATA
ic tlo 741
LM 741 op amp single supply
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