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    RF35 BOARD 30MIL Search Results

    RF35 BOARD 30MIL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    SCR410T-K03-PCB Murata Manufacturing Co Ltd 1-Axis Gyro Sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    SCC433T-K03-PCB Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828EVB Murata Manufacturing Co Ltd QORVO UWB MODULE EVALUATION KIT Visit Murata Manufacturing Co Ltd
    SSCCOMMBOARDV4P1C Renesas Electronics Corporation SSC Communication Board Visit Renesas Electronics Corporation

    RF35 BOARD 30MIL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3 PDF

    RF35 board 30mil

    Abstract: LT1964-BYP nichicon pw NPT35050A 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115
    Text: NPT35050A Datasheet Gallium Nitride 28V, 50W High Electron Mobility Transistor NPT35050A Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Si technology. FEATURES • Designed for 3.3-3.8 GHz WiMAX applications. • Typical OFDM performance at VDD = 28 Volts, IDQ =


    Original     		NPT35050A NPT35050A 64-QAM RF35 board 30mil LT1964-BYP nichicon pw 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115 PDF