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    RFP30P Price and Stock

    onsemi RFP30P06

    MOSFET P-CH 60V 30A TO220-3
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    DigiKey RFP30P06 Tube 800
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    onsemi RFP30P05

    MOSFET P-CH 50V 30A TO220-3
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    DigiKey RFP30P05 Tube 800
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    Harris Semiconductor RFP30P05

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    Bristol Electronics RFP30P05 151
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    RFP30P05 55
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    Quest Components RFP30P05 120
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    Fairchild Semiconductor Corporation RFP30P06

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    Bristol Electronics RFP30P06 23
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    Quest Components RFP30P06 57
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    RFP30P06 18
    • 1 $10.11
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    Intersil Corporation RFP30P06

    TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,30A I(D),TO-220AB
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    Quest Components RFP30P06 89
    • 1 $14.7
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    Find more RFP30P price and stock on Findchips.com

    RFP30P Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP30P05 Fairchild Semiconductor 30A, 50V, 0.065 Ohm, P-Channel Power MOSFET Original PDF
    RFP30P05 Harris Semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP30P05 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP30P05 Intersil 30A, 50V, 0.065 ?, P-Channel Power MOSFETs Original PDF
    RFP30P05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP30P05 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, 50V, 30A, Pkg Style TO-220AB Scan PDF
    RFP30P05 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP30P05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP30P06 Fairchild Semiconductor 30A, 60V, 0.065 Ohm, P-Channel Power MOSFET Original PDF
    RFP30P06 Harris Semiconductor 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP30P06 Intersil 30A, 60V, 0.065 ?, P-Channel Power MOSFETs Original PDF
    RFP30P06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP30P06 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P Channel, 60V, 30A, TO220AB Scan PDF
    RFP30P06 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP30P06 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f1s30p05

    Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. f1s30p05 RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334

    F1S30P05

    Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. F1S30P05 RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334

    F1S30P06

    Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
    Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM


    Original     		PDF RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334

    F1S30P06

    Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC TB334 RFP30P06 F1S30P06 F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P

    F1S30P06

    Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
    Text: RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM O-247 175oC F1S30P06 RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3

    RFP30P06

    Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC RFP30P06 R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFP30P06 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)75# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)135# Minimum Operating Temp (øC)-55õ


    Original     		PDF RFP30P06

    RFP30P06

    Abstract: No abstract text available
    Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet Title FG3 06, P30 6, 1S3 06S bt A, V, 65 m, anwer OSTs utho eyrds ter- July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. RFP30P06

    f1s30p05

    Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM O-247 175oC f1s30p05 RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris

    RFP30P

    Abstract: No abstract text available
    Text: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power


    Original     		PDF RFG30P05, RFP30P05, RF1S30P05SM RFP30 0P05S O220AB RFP30P

    Untitled

    Abstract: No abstract text available
    Text: RFP30P05 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)75# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120# Minimum Operating Temp (øC)-55õ


    Original     		PDF RFP30P05

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 0-065i2 81e-8) 23e-1 97e-3 37e-5) 78e-9

    F1S30P05

    Abstract: No abstract text available
    Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0-065i2 Operati85e-9 81e-8) 23e-1 97e-3 37e-5)

    30P06

    Abstract: No abstract text available
    Text: RFG 30P06 RFP30P06 ¡2 H a r r i s P-Channe! Enhancement Mode Power Field Effect Transistors MegaFETs August 1991 Features Packages • -3 0 A , -6 0 V • rD S(on) = 0 .0 7 5 C l • UIS S O A Rating Curve (Single Pulse) • SO A is P o w er-D issip atio n Lim ited


    OCR Scan     		PDF 30P06 RFP30P06 FP30P06 RFG30P06,

    F1S30P06

    Abstract: 30p06
    Text: RFG30P06, RFP30P06, r f 1 S30P06, RF1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel


    OCR Scan     		PDF RFG30P06, RFP30P06, S30P06, RF1S30P06SM O-247 P06SM 81e-8) 23e-1 97e-3 37e-5) F1S30P06 30p06

    RFP30P06

    Abstract: No abstract text available
    Text: interrii RFG30P06, RFP30P06, RF1S30P06SM D a ta S h e e t J u ly 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs F ile N u m b e r 2 4 3 7 .3 Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG30P06, RFP30P06, RF1S30P06SM TA09834. RF1S30P06SM AN7254 AN7260. RFP30P06

    Untitled

    Abstract: No abstract text available
    Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    OCR Scan     		PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.

    Untitled

    Abstract: No abstract text available
    Text: T T \ IP IFA D L T C 1 1 4 9 - 3 , / L tS ^ TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators KflTU IK S DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load


    OCR Scan     		PDF 16-Pin LTC1149 16-Lead

    80-DF

    Abstract: 100MF 35v lt1149
    Text: uTECHNOLOGY i m ^ L T C IM LTC1149- TCI 149-5 High Efficiency Synchronous Step-Down Switching Regulators FCOTUfteS A DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load


    OCR Scan     		PDF LTC1149- LTC1149 250kHz 80-DF 100MF 35v lt1149