Untitled
Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V
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SUM47N10-24L
O-263
SUM47N10-24L--E3
08-Apr-05
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Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V
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SUM47N10-24L
O-263
SUM47N10-24L--E3
S-40434--Rev.
15-Mar-04
136B
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SUM47N10-24L
Abstract: SUM47N10-24L-E3
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
18-Jul-08
SUM47N10-24L
SUM47N10-24L-E3
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Untitled
Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SUM47N10-24L
Abstract: SUM47N10-24L-E3
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
08-Apr-05
SUM47N10-24L
SUM47N10-24L-E3
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SUM47N10-24L
Abstract: SUM47N10-24L-E3
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
11-Mar-11
SUM47N10-24L
SUM47N10-24L-E3
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Untitled
Abstract: No abstract text available
Text: SUM47N10-24L Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 15 nC
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Si7848BDP
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) COMPLIANT 15 nC APPLICATIONS
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Si7848BDP
Si7848BDP-T1-E3
08-Apr-05
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SUM47N10-24L
Abstract: SUM47N10-24L-E3
Text: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUM47N10-24L
O-263
SUM47N10-24L-E3
08-Apr-05
SUM47N10-24L
SUM47N10-24L-E3
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Si7848BDP
Abstract: Si7848BDP-T1-E3 Si7848BDP-T1-GE3
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 15 nC
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Si7848BDP
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
08-Apr-05
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mosfet equivalent
Abstract: No abstract text available
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si7848BDP
2002/95/EC
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet equivalent
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Untitled
Abstract: No abstract text available
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si7848BDP
2002/95/EC
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si7848BDP
2002/95/EC
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
11-Mar-11
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Si7848BDP-T1-E3
Abstract: Si7848BDP-T1-GE3 74632 Si7848BDP
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si7848BDP
2002/95/EC
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
18-Jul-08
74632
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Untitled
Abstract: No abstract text available
Text: FII 30-06D IC25 = 30 A VCES = 600 V VCE sat typ. = 1.9 V IGBT phaseleg in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
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30-06D
E72873
5-06A
20110119a
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3006d
Abstract: H bridge 300v 30a
Text: FII 30-06D IGBT phaseleg IC25 = 30 A VCES = 600 V VCE sat typ. = 1.9 V in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
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30-06D
E72873
5-06A
20110119a
3006d
H bridge 300v 30a
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isoplus ixys mounting
Abstract: buck-boost chopper D-68623 3006d
Text: FII 30-06D IC25 = 30 A = 600 V VCES VCE sat typ. = 1.9 V IGBT phaseleg in ISOPLUS i4-PACTM 3 Preliminary data 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
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30-06D
isoplus ixys mounting
buck-boost chopper
D-68623
3006d
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Untitled
Abstract: No abstract text available
Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A C E G E TO-220AB Full-Pak n-channel Applications • • • • Air Conditioner Compressor
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IRG7IC20FDPbF
O-220AB
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irg7ic
Abstract: transistor IC 12A 400v IRG7
Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC20FDPbF
O-220AB
irg7ic
transistor IC 12A 400v
IRG7
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BSM10GP120
Abstract: FP15R12KS4C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KS4C Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FP15R12KS4C
BSM10GP120
FP15R12KS4C
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1SV147
Abstract: toshiba lable information
Text: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
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1SV147
1SV147
toshiba lable information
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BZTS2-CSV1
Abstract: DIODE CSV1 BZT52 BZT52-C2V7 BZT52-C3 BZT52-C3V3 BZT52-C3V6 BZT52-C3V9 BZT52-C4V3 BZT52-C4V7
Text: BZT52. Silicon Planar Zener Diodes The Zener voltages are graded according to the interna tional E 24 standard. -1 S 3 ro f rg - - bottom view I !" 1 tss 0.15 These diodes are delivered taped. Plastic Package « 60 A2 according to DIN IEC 47 CO 718
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BZT52.
BZT52-C20
BZT52-C22
BZT52-C24
BZT52-C27
BZT52-C30
BZT52-C33
BZT52-C36
BZT52-C39
BZT52-C43
BZTS2-CSV1
DIODE CSV1
BZT52
BZT52-C2V7
BZT52-C3
BZT52-C3V3
BZT52-C3V6
BZT52-C3V9
BZT52-C4V3
BZT52-C4V7
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