RGP15J DIODE Search Results

RGP15J DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

RGP15J DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RGP15G Abstract: No abstract text available Text: RGP15A, RGP15B, RGP15D, RGP15G, RGP15J, RGP15K, RGP15M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction	Original	RGP15A, RGP15B, RGP15D, RGP15G, RGP15J, RGP15K, RGP15M 22-B106 DO-204AC DO-15) RGP15G	PDF
Untitled Abstract: No abstract text available Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.5 A 50 V to 1000 V 50 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C ted* n e t Pa	Original	RGP15A RGP15M DO-204AC DO-15) MIL-S-19500 DO-204AC, 08-Apr-05	PDF
RGP15J Abstract: RGP15G diode DO-204AC JESD22-B102D J-STD-002B RGP15A RGP15M RGP15D Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 µA	Original	RGP15A RGP15M MIL-S-19500 2002/95/EC 2002/96/EC DO-204AC DO-15) 08-Apr-05 RGP15J RGP15G diode DO-204AC JESD22-B102D J-STD-002B RGP15M RGP15D	PDF
RGP15G diode Abstract: rectifier diode rgp15g DO-204AC JESD22-B102D J-STD-002B RGP15A RGP15M RGP15G Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 µA	Original	RGP15A RGP15M MIL-S-19500 2002/95/EC 2002/96/EC DO-204AC DO-15) 08-Apr-05 RGP15G diode rectifier diode rgp15g DO-204AC JESD22-B102D J-STD-002B RGP15M RGP15G	PDF
DO204AC Abstract: DO-204AC RGP15M rgp15g RGP15J Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV VRRM IFSM trr IR VF Tj max. 1.5 A 50 V to 1000 V 50 A 150 ns, 250 ns, 500 ns 5.0 µA 1.3 V 175 °C ted* n e t Pa	Original	RGP15A RGP15M DO-204AC DO-15) MIL-S-19500 DO-204AC, 19-Sep-05 DO204AC DO-204AC RGP15M rgp15g RGP15J	PDF
Untitled Abstract: No abstract text available Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than	Original	RGP15A RGP15M DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05	PDF
DO-204AC Abstract: JESD22-B102 J-STD-002 RGP15A RGP15M Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than	Original	RGP15A RGP15M MIL-S-19500 2002/95/EC 2002/96/EC DO-204AC DO-15) 18-Jul-08 DO-204AC JESD22-B102 J-STD-002 RGP15M	PDF
Untitled Abstract: No abstract text available Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A	Original	RGP15A RGP15M MIL-S-19500 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08	PDF
DO-204AC Abstract: J-STD-002 RGP15A RGP15M Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Fast switching for high efficiency	Original	RGP15A RGP15M MIL-S-19500 DO-204AC DO-15) 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 DO-204AC J-STD-002 RGP15M	PDF
Untitled Abstract: No abstract text available Text: RGP15A thru RGP15M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Fast switching for high efficiency	Original	RGP15A RGP15M MIL-S-19500 DO-204AC DO-15) 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU	PDF
RGP15G diode Abstract: Diode FR104 FR105 diode FR104 diode 1n3890 datasheet FR101 FR102 FR103 FR104 FR105 Text: Elite Semiconductor Products \| Fast Recovory Diodes Data Sheets and Samples Available Upon Request CLICK HERE Home \| Contact Us \| Bridge Rectifiers \| Diodes \| Fast recovery Diodes \| Rectifiers Schottky Rectifiers \| Standard Recovery Diodes \| Thyristors \| Transient Voltage \| Suppressors \| Triacs	Original	FR101 FR102 FR103 FR104 D0-203AA 16FL10S10 16FL20S10 16FL40S10 16FL60S10 16FL80S10 RGP15G diode Diode FR104 FR105 diode FR104 diode 1n3890 datasheet FR101 FR102 FR103 FR105	PDF
rgp10j diode Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode Text: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C	Original	1N4933 DO-41 1N4934 1N4935 1N4936 DO-15 RGP15M rgp10j diode FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode	PDF
diode a15a Abstract: diode A14A 6A4 rectifier diode p600m DIODE A14F diode 6AO5 RGP15G diode 6A8 RECTIFIER DIODE diode P600A DIODE 1N5402 3a Text: Elite Semiconductor Products \| Diodes Data Sheets and Samples Available Upon Request CLICK HERE Home \| Contact Us \| Bridge Rectifiers \| Diodes \| Fast recovery Diodes \| Rectifiers Schottky Rectifiers \| Standard Recovery Diodes \| Thyristors \| Transient Voltage \| Suppressors \| Triacs	Original	1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BR-25W BR-25/ MB-25 diode a15a diode A14A 6A4 rectifier diode p600m DIODE A14F diode 6AO5 RGP15G diode 6A8 RECTIFIER DIODE diode P600A DIODE 1N5402 3a	PDF
IN4007GP Abstract: d1 in4007gp KA7542 ABCO samsung electrolytic capacitor KA7525 24v 5a smps IN4148 5T IN4004 IRF830 Text: Ver. 3.0 KA7525/B/26 POWER FACTOR CORRECTION The KA7525/B/26 provides simple, yet high performance active power factor correction. KA7525/B/26 is optimized for electronic ballast and low power, high density power supplies requiring a minimum board area, reduced component count and low power dissipation.	Original	KA7525/B/26 KA7525/B/26 IN4007GP d1 in4007gp KA7542 ABCO samsung electrolytic capacitor KA7525 24v 5a smps IN4148 5T IN4004 IRF830	PDF

diac N413 Abstract: fan7527 application note FAN7527 10K variable resistor N413 transistor DNR10D471 DIODE IN4007 DNR10D DBT-002 EI2820 Text: www.fairchildsemi.com Application Note 4107 Power Factor Correction Controller 1. Introduction FAN7527 is high performance, boundary conduction, current-mode power factor controller specifically designed for use in active preconverters with minimal external components. This device provides the necessary features which are required to significantly enhance poor power factor loads by keeping the ac line	Original	FAN7527 diac N413 fan7527 application note 10K variable resistor N413 transistor DNR10D471 DIODE IN4007 DNR10D DBT-002 EI2820	PDF
PG06J Abstract: diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a FEP30JT Text: C£X>G e n e r a l v S e m ic o n d u c t o r END-USEAPPLICATIONS '¿•it V BH I END-USE INPUT BRIDGE (A) O U TPUT/ SNUBBER Output DF08M W08G KBP08M GBU4K GBU6K GBU8K RGP10J RGP15J RGP30J FEP6JT FEP16JT FEP30JT 40V RGP10K RGP15K RGP30K 1.0A 1.5A 3.0A 5.0A	OCR Scan	DF04M KBP04M DF06M KBP06M RGP10J RGP15J RGP30J FEP16JT FEP30JT SB040 PG06J diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a	PDF
GP25D Abstract: RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M Text: GLASS PASSIVATED FAST RECOVERY SILICON SUPER DIODE typ e PIV Peak inverse V o lta g e M AX AVG R e c tifie d C urre n t H a lfW a ve Res. Load 60Hz IO "> TA VPK AA V MAX FWD Peak M A X Reverse S urge C urre n t C urre n t 1 60H Z i " PIV V o lta ge S up erim p ose d	OCR Scan	DO-41 RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M RECOVERY/DO-201AD RGP25A GP25D RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M	PDF
RGP15G diode Abstract: diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A D0204AP G1854 Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECO VERY SILIC O N RECT IFIERS continued 2.0 1.5 IM A ] D0204AP DO 15 PKG TYPE ( (Ì GP20 % r \i D0204AP 00201AP (k <^ VRRM (volts) D0204AP l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P	OCR Scan	D0204AP D0201AP RGP15A RGP20A RGP15B RGP20B BY296P RGP15D RGP15G diode diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A G1854	PDF
motorola diode cross reference Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3	OCR Scan	1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"	PDF
Transistor NEC 12d Abstract: IN4007GP IN4007g saMSUNG ELECTROLYTIC capacitor SD series IN4007 d1 in4007gp Text: Ver. 3.0 KA7525/B/26 POWER FACTOR CORRECTION The KA7525/B/26 provides simple, yet high perfor mance active power factor correction. KA7525/B/26 is optimized for electronic ballast and low power, high den sity power supplies requiring a minimum board area,	OCR Scan	KA7525/B/26 KA7525/B/26 150mA IN4007GP RGP15J IN4148 BSF2125 EI2820 Transistor NEC 12d IN4007g saMSUNG ELECTROLYTIC capacitor SD series IN4007 d1 in4007gp	PDF
Transistor NEC 12d Abstract: IN4007GP Text: Ver. 3.0 POWER FACTOR CORRECTION KA7525/B/26 The KA7525/B/26 provides simple, yet high perfor m ance active pow er factor correction. KA7525/B/26 is optim ized for electronic ballast and low power, high d en sity pow er supplies requiring a m inim um board area,	OCR Scan	KA7525/B/26 KA7525/B/26 EI2820 EE1619 INR140, IRF830 Transistor NEC 12d IN4007GP	PDF
IN4007GP Abstract: N413N samsung electrolytic capacitor IN4937 description Type NS ceramic cap power supply IRF830 APPLICATION d1 in4007gp CAPACITOR 47UF 25V ELECTROLYTIC EI2519 h a 431 transistor Text: Ver. 3.0 POWER FACTOR CORRECTION KA7525/B/26 The KA7525/B/26 provides simple, yet high perfor m ance active pow er factor correction. KA7525/B/26 is optim ized for electronic ballast and low power, high d en sity pow er supplies requiring a m inim um board area,	OCR Scan	KA7525/B/26 KA7525/B/26 IN4007GP N413N samsung electrolytic capacitor IN4937 description Type NS ceramic cap power supply IRF830 APPLICATION d1 in4007gp CAPACITOR 47UF 25V ELECTROLYTIC EI2519 h a 431 transistor	PDF
d137 smd diode Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135 Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D	OCR Scan	D0204AP 00201AP D0204AP RGP15J RGP15K RGP15M BYV95C BYV96D BYV96E d137 smd diode rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135	PDF
capacitor 12 n j 630v Abstract: samsung electrolytic capacitor variable resistor 2.2k IN4007 IN4007GP KA7540 ABCO INR14 Lamp thermal link ELECTRONIC BALLAST 18 W circuit diagram Text: PRELIMINARY KA7540/41 Simple Ballast Control 1C INTRODUCTION The KA7540/41 provides simple, yet high performance electronic ballast control functions. KA7540/41 is optimized for electronic ballast requiring a minimum board area, reduced component count and low power	OCR Scan	KA7540/41 KA7540/41 voltP15J IN4148 BSF2125 EI2820 capacitor 12 n j 630v samsung electrolytic capacitor variable resistor 2.2k IN4007 IN4007GP KA7540 ABCO INR14 Lamp thermal link ELECTRONIC BALLAST 18 W circuit diagram	PDF

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RGP15J DIODE Search Results

RGP15J DIODE Result Highlights (5)

RGP15J DIODE Datasheets Context Search

RGP15G

Untitled

RGP15J

RGP15G diode

DO204AC

Untitled

DO-204AC

Untitled

DO-204AC

Untitled

RGP15G diode

rgp10j diode

diode a15a

IN4007GP

diac N413

PG06J

GP25D

RGP15G diode

motorola diode cross reference

Transistor NEC 12d

Transistor NEC 12d

IN4007GP

d137 smd diode

capacitor 12 n j 630v