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    RGS SOT23 Search Results

    RGS SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    RGS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N-Channel jfet 100V depletion

    Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		PDF LS320 200mW N-Channel jfet 100V depletion transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch

    LS320

    Abstract: RGs sot23
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		PDF LS320 200mW LS320 RGs sot23

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


    Original     		PDF 2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF 2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237

    BC237

    Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002LT1G 236AB)

    Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

    Abstract: 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW VDGR 60


    Original     		PDF 2N7002L OT-23 2N7002L/D Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23

    2N7002LT1G

    Abstract: 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW


    Original     		PDF 2N7002L OT-23 2N7002L/D 2N7002LT1G 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G

    date code IEC 62

    Abstract: bc107a pin out BC237 bf256c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage


    Original     		PDF VN0610LL 226AA) secon218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 date code IEC 62 bc107a pin out BC237 bf256c

    LRK7002LT1

    Abstract: LRK7002L marking 702 sot-23 marking 702 sot-23 MARKING CODE 70.2 sot 23 70.2 Sot-23 MARKING 702
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts LRK7002LT1 N–Channel SOT–23 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.)


    Original     		PDF LRK7002LT1 236AB) OT-23 LRK7002LT1-4/4 LRK7002LT1 LRK7002L marking 702 sot-23 marking 702 sot-23 MARKING CODE 70.2 sot 23 70.2 Sot-23 MARKING 702

    SOT-353 MARKING 8v

    Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002WT1G SC-70) C330mm 360mm SOT-353 MARKING 8v diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23

    2N7002 MARKING

    Abstract: 2N7002 MARKING 702 2N7002
    Text: WEITRON 2N7002 Small Signal MOSFET N-Channel 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR 60 V Drain Current


    Original     		PDF 2N7002 OT-23 08-Jul-09 OT-23 2N7002 MARKING 2N7002 MARKING 702 2N7002

    ss129

    Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
    Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3


    Original     		PDF Q62702-S568 E6327: Q67000-S243 E6433: OT-23 ss129 SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101

    RGs 14

    Abstract: RGS 13/1
    Text: Preliminary Data BSS 159 SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Marking Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 SEs Q67000-S321 Maximum Ratings


    Original     		PDF OT-23 Q67000-S321 RGs 14 RGS 13/1

    Q67050-T6

    Abstract: RGs sot23
    Text: BSS 159 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 Q67050-T6 Maximum Ratings Parameter Symbol


    Original     		PDF OT-23 Q67050-T6 May-30-1996 Q67050-T6 RGs sot23

    Q67050-T7

    Abstract: No abstract text available
    Text: BSS 169 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS on Package Ordering Code BSS 169 100 V 0.12 A 12 Ω SOT-23 Q67050-T7 Maximum Ratings Parameter


    Original     		PDF OT-23 Q67050-T7 May-30-1996 Q67050-T7

    BSS84

    Abstract: BSS84 SOT23
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAIL — SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current


    Original     		PDF BSS84 -100mA BSS84 BSS84 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAIL — SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current


    Original     		PDF BSS84 -100mA

    BSS138

    Abstract: Q67000-S566 E6327 Q67000-S216 marking BSs
    Text: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566


    Original     		PDF OT-23 Q67000-S566 Q67000-S216 E6327 E6433 BSS138 Q67000-S566 E6327 Q67000-S216 marking BSs

    marking sSH sot-23

    Abstract: E6327 Q67000-S007 marking 119 marking BSs
    Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information


    Original     		PDF OT-23 Q67000-S007 E6327 Sep-13-1996 marking sSH sot-23 E6327 Q67000-S007 marking 119 marking BSs

    marking BSs sot-23

    Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
    Text: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information


    Original     		PDF OT-23 Q67000-S132 E6327 Sep-13-1996 marking BSs sot-23 Q67000-S132 E6327 marking BSs SOT23 MARKING SBs

    SAs SOT-23 marking

    Abstract: marking BSs SAS SOT23 transistor 45 f 123 marking "BSs" E6327 Q62702-S512 Q67000-S245 bss 108 marking SAs SOT23
    Text: BSS 123 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512


    Original     		PDF OT-23 Q62702-S512 Q67000-S245 E6327 E6433 Sep-13-1996 SAs SOT-23 marking marking BSs SAS SOT23 transistor 45 f 123 marking "BSs" E6327 Q62702-S512 Q67000-S245 bss 108 marking SAs SOT23

    Q67000-S007

    Abstract: E6327 marking BSs marking sSH sot-23
    Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information


    Original     		PDF OT-23 Q67000-S007 E6327 Q67000-S007 E6327 marking BSs marking sSH sot-23

    Untitled

    Abstract: No abstract text available
    Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 -SEPTEMBER 1995 O PARTMARKING DETAIL— SP ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT -50 V mA mA Continuous Drain Current •d -130 Pulsed Drain Current


    OCR Scan     		PDF BSS84 Tamtp25Â -100mA 100mA 300lis.