laser diode RW
Abstract: laser diode specification sheet fabry perot laser spectrum fabry perot TEM00 laser diode pinout EYP-RWL-0730-00020-1500-SOT02-0000 diode device data on semiconductor
Text: 1.00 05.06.2007 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry/Perot Laser with Ridgle Waveguide RWL DATA SHEET RW Laser EYP-RWL-0730-00020-1500-SOT02-0000 Absolute Maximum Ratings Symbol Unit Operational Temperature at case
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EYP-RWL-0730-00020-1500-SOT02-0000
laser diode RW
laser diode specification sheet
fabry perot laser spectrum
fabry perot
TEM00
laser diode pinout
EYP-RWL-0730-00020-1500-SOT02-0000
diode device data on semiconductor
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tunable laser diode
Abstract: TPL 250 EYP-RWE-0870-06010-0750-SOT01-0000
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0870-06010-0750-SOT01-0000
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EYP-RWE-0870-06010-0750-SOT01-0000
tunable laser diode
TPL 250
EYP-RWE-0870-06010-0750-SOT01-0000
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MW110
Abstract: tunable laser diode laser diode lifetime EYP-RWE-0850-05010-1500-SOT02-0000
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0850-05010-1500-SOT02-0000
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EYP-RWE-0850-05010-1500-SOT02-0000
MW110
tunable laser diode
laser diode lifetime
EYP-RWE-0850-05010-1500-SOT02-0000
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tunable laser diode
Abstract: Laser Diode 10 pin laser diode pinout laser
Text: Version 0.91 04.11.2009 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0980-08020-1500-SOT02-0000
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EYP-RWE-0980-08020-1500-SOT02-0000
tunable laser diode
Laser Diode 10 pin
laser diode pinout
laser
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EYP-RWE-0790-04000-0750-SOT01-0000
Abstract: laser diode pinout laser 790 nm
Text: Version 0.90 28.12.2007 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0790-04000-0750-SOT01-0000
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EYP-RWE-0790-04000-0750-SOT01-0000
EYP-RWE-0790-04000-0750-SOT01-0000
laser diode pinout
laser 790 nm
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EYP-RWE-0840-06010-1500-SOT02-0000
Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000
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EYP-RWE-0840-06010-1500-SOT02-0000
EYP-RWE-0840-06010-1500-SOT02-0000
780 laser diode
tunable laser diode
840 nm GaAs
0/840 nm GaAs
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Untitled
Abstract: No abstract text available
Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
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EYP-RWL-0790-00100-1500-SOT02-0000
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EYP-RWE-0940-08000-0750-SOT01-0000
Abstract: No abstract text available
Text: Version 0.90 09.10.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0940-08000-0750-SOT01-0000
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1060 nm GaAs Laser Diode
Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000
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EYP-RWE-1060-10020-0750-SOT01-0000
1060 nm GaAs Laser Diode
ridge waveguide semiconductor laser
tunable laser diode
GaAs diode nm
laser diode lifetime
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ridge waveguide semiconductor laser
Abstract: No abstract text available
Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 150 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
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EYP-RWL-1080-00080-0750-SOT01-0000
ridge waveguide semiconductor laser
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1060 nm GaAs Laser Diode
Abstract: No abstract text available
Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
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EYP-RWL-1060-00100-0750-SOT01-0000
1060 nm GaAs Laser Diode
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laser diode 780 nm
Abstract: No abstract text available
Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
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EYP-RWL-0780-00100-1000-SOT01-0000
laser diode 780 nm
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Laser diode Fabry-Perot
Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
Text: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser
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EYP-RWL-1120-00050-1300-SOT02-0000
Laser diode Fabry-Perot
laser diode lifetime
TEM00
ridge waveguide semiconductor laser
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Untitled
Abstract: No abstract text available
Text: SPECTROSCOPIC DFB-LASERS: SPECDILAS -D INTRODUCTION HHI has been involved in the development of semiconductor DFB lasers from its early start in the 80’s. Based on this experience, custom design of multi quantum well ridge waveguide laser structures is available for applications in production control,
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Abstract: No abstract text available
Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
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optical source
Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
Text: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength
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14-pin
optical source
Fabry-Perot 1550 nm
Fabry-Perot 1550 nm butterfly
Laser InP
laser transmitter
datasheet laser 1550 spectral
laser 1550 nm
laser transmitter 1550 nm
TO56 laser
TO-CAN
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U-CP-9850044
Abstract: No abstract text available
Text: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)
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U-CP-9850044
980nm
U-CP-9850044
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U-CP-80B0065
Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
Text: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm
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U-CP-80B0065
808nm
U-CP-80B0065
diode laser 808nm 200mW
TO-CAN
808nm laser diode
laser diode bare chip
laser diode 808nm
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U-CP-6505011
Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
Text: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505011
650nm
300um
100um
U-CP-6505011
650nm 5mw laser
300um
650nm 5mw laser diode
laser diode bare chip
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TO18 Laser 808nm 300 mw
Abstract: IR Laser diode laser diode bare chip
Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80E0075-preliminary
808nm
886-3-g
TO18 Laser 808nm 300 mw
IR Laser diode
laser diode bare chip
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U-CP-6505001
Abstract: laser diode bare chip
Text: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505001
650nm
300um
100um
U-CP-6505001
laser diode bare chip
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U-CP-80C0055-preliminary
Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80C0055-preliminary
808nm
886-3-g
U-CP-80C0055-preliminary
808nm 300mw laser diode
laser diode 300mw
TO-CAN
808nm 300mW
TO18 Laser 808nm 300 mw
808nm laser diode
laser diode bare chip
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Untitled
Abstract: No abstract text available
Text: U-CP-6505010 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505010 •Specifications 1 Size : (2) Device: (3) Structure 250*250*100 m Laser diode uncoating chip double channel , single ridge waveguide 100μm ■External dimensions(Unit : μm)
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U-CP-6505010
650nm
300um
100um
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Laser Diode 808 300 mw
Abstract: No abstract text available
Text: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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SLD-808-P200-C-04
808nm
886-3-485-268in
Laser Diode 808 300 mw
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