photo sensor s4810
Abstract: No abstract text available
Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
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S4810,
S6289
S4810
S6289
S4810:
S6289:
SE-171
KPIC1005E06
photo sensor s4810
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Untitled
Abstract: No abstract text available
Text: PHOTO IC Low-voltage operation photo IC S6289 Operation at low voltage from 2.2 V The S6289 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
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S6289
S6289
SE-171
KPIC1005E05
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S4810
Abstract: S6289 photo sensor s4810
Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
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S4810,
S6289
S4810
S6289
S4810:
S6289:
SE-171
KPIC1005E04
photo sensor s4810
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PDF
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photo sensor s4810
Abstract: S4810 1BW TRANSISTOR S6289
Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
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Original
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S4810,
S6289
S4810
S6289
S4810:
S6289:
SE-171
KPIC1005E03
photo sensor s4810
1BW TRANSISTOR
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photo sensor s4810
Abstract: No abstract text available
Text: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
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S4810-100
S4810-100
SE-171
KPIC1072E03
photo sensor s4810
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S4810
Abstract: hl 05
Text: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.
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S4810-100
S4810-100
SE-171
KPIC1072E02
S4810
hl 05
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transistor 701 2k
Abstract: No abstract text available
Text: Transmissive Photosensors Photo Interrupters CNA1301H Photo Interrupter 4-0.5 0.5 3.0 (1.0) 1.5±0.1 2-ø0.7±0.1 2 4 3 4 1 3 Pin connection V IF 50 mA 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO
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CNA1301H
CNA1301H
transistor 701 2k
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MAX280
Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
Text: *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Soldering profile 5. Outline dimension 6. Packing 7. Reel packing structure 8. Precaution for use
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SSC-PTR202-IX0
SSC-QP-0401-06
SSC-PTR202
MAX280
SSC-PTR202
SSC-PTR202-IX0
SMD 5c Transistor
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OST-9N15
Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
Text: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors
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OST-9N15
OST-9N15
100uA
72hrs.
24hrs)
45min
30min)
color sensitive PHOTO TRANSISTOR
OST9N15
transistor d 1303
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NJL7502L
Abstract: No abstract text available
Text: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 µA typ. Condition : White LED, 100Lux 3. Lead pin package
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NJL7502L
NJL7502L
100Lux
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00004B
Abstract: PS302
Text: A C INTERFACE INC IDE D | 0D233Ô3 OOOOMbt 5 | PS302 SüMI T-Hhûl STANLEY PHOTO TRANSISTOR • Package Dimensions ■ FEATURES 1 High photo current (Typ. 5 mA at Ee = 1 mW/cm2 ) (2) High directivity (3) Low cost, long life time ■ A PPLICA TIO N S (1) Position detection of rotary encoders
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PS302
I-100
00004B
PS302
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color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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transistor circuit
Abstract: 357 photo
Text: O K I electronic components OC33 PHOTO COUPLER GENERAL DESCRIPTION The OC33 is a combination of a light emission diode GaAs LED and a light receiving silicon photo transistor. FEATURES • Current transfer ratio: 20% min. • Isolation voltage: 1,000 V min.
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2x10a
5x10a
5x102
transistor circuit
357 photo
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PHOTO TRANSISTOR
Abstract: Rise time of photo transistor photo transistor high current
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and
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HI-T70MB
HI-T70MB
200Lux
2000Lux
PHOTO TRANSISTOR
Rise time of photo transistor
photo transistor high current
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FC101
Abstract: No abstract text available
Text: C INTERFACE INC IDE D | QGE3BÔ3 00[]04a4 4 | N '• ia m e y • STANLEY PHOTO TRANSISTOR ■ Package Dimensions ~ • •- FS-511 : I ■ '4 ^ 1 ■ FEATURES (1 High accuracy by use of special resin package with central chip (2) High photo current {Typ. 2.5m A at Ee = 10mW/cm2 )
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FS-511
10mW/cm2)
FC-101
FS-51!
FC101
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photo transistor
Abstract: FS-511 FC-101 photo transistor high current
Text: C INTERFACE INC IDE D | 0023303 0000404 ^ ÏÂ ^ mey ^ | ~ FS-511 STANLEY PHOTO TRANSISTOR • Package Dimensions ■ FEATURES 1 High accuracy by use of special resin package with central chip (2) High photo current (Typ. 2.5m A at Ee = 10mW/cm2 ) (3) Fast response permits fast transmission
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FS-511
10mW/cm2)
FC-101
FC-101
photo transistor
FS-511
photo transistor high current
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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OC401
Abstract: No abstract text available
Text: O K I electronic components OC401 PHOTO COUPLER GENERAL DESCRIPTION The C C40 is a combination of a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package and ensures dielectric voltage of 2,500 V. FEATURES • High-speed response : 140 ns
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OC401
OC401
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Untitled
Abstract: No abstract text available
Text: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec
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phototransistor 302
Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
Text: OST-302 PHOTO TRANSISTOR • General Description The OST-302 is high sensitivity NPN silicon photo-transistor mounted in a black side-looking package , is compact , low profile and easy to mount. ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package
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OST-302
OST-302
1000Lux
2000Lux
2856K
phototransistor 302
photo transistor high current
PHOTO TRANSISTOR
A 720 transistor
TRansistor A 940
Rise time of photo transistor
720 transistor
302 phototransistor
npn photo transistor
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Untitled
Abstract: No abstract text available
Text: Visible Light Photo Reflector Product No: MTRS1070 Peak Emission Wavelength: 700nm The 700nm reflective sensor consists of a 700nm visible emitter and high sensitivity photo transistor in the same package. The black molded housing reduces the effect of external ambient light. Custom emitter/
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MTRS1070
700nm
700nm
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TRANSISTOR SMD MARKING CODE p1
Abstract: EL series SMD transistor 815Y EL852 smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
Text: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )
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EL852
DPC-0000056
TRANSISTOR SMD MARKING CODE p1
EL series SMD transistor
815Y
smd transistor S1
TRANSISTOR SMD MARKING CODE
4 pin dip photo transistor
smd code s1 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: INFRARED LED + PHOTO TRANSISTOR TLP833 TLP833 COPIER, PAGE PRINTER, FACSIMILE VCR, M IC R O W A V E OVEN, AIR CONDITIONER AUTOM ATIC VENDING M ACHINE, TERM IN A L EQ U IPM EN T IN BANKING FACILITIES VA RIO US POSITION DETECTION SENSOR TLP833 is a photo interrupter which uses a high
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TLP833
TLP833)
TLP833
UL94-V0)
Ta-25Â
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PDF
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toshiba 4b1
Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Text: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TLN107A,
TLN107A
driven40mm
TPS617
toshiba 4b1
4b1 toshiba
photo interrupter darlington sensor
TLN107
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