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    RJK6011DJA-00#Z0 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 Features • Low on-resistance RDS on = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting


    Original
    RJK6011DJA R07DS0873EJ0200 PRSS0003DA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching R07DS0873EJ0100 Rev.1.00 Aug 27, 2012 Features • Low on-resistance RDS on = 35  typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting


    Original
    RJK6011DJA R07DS0873EJ0100 PRSS0003DA-A PDF