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Renesas Electronics Corporation RJL5014DPK-00-T0 MOSFET N-CH 500V 19A TO3P
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DigiKey	RJL5014DPK-00-T0	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation RJL5014DPK-00#T0 MOSFET - Trays (Alt: RJL5014DPK-00#T0)
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Avnet Americas	RJL5014DPK-00#T0	Tray			325	1 $4.41 10 $4.41 100 $4.41 1000 $4.41 10000 $4.41	Buy Now

RJL5014DPK Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJL5014DPK		Renesas Technology	MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1700; toff ( us) typ: -; Package: TO-3P		Original	PDF
RJL5014DPK-00#T0		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 19A TO3P		Original	PDF

RJL5014DPK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)	Original	RJL5014DPK R07DS0436EJ0200 REJ03G1798-0100) PRSS0004ZE-A	PDF
PRSS0004ZE-A Abstract: RJL5014DPK RJL5014DPK-00-T0 SC-65 Text: RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1798-0100 Rev.1.00 Jun 30, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A	Original	RJL5014DPK REJ03G1798-0100 PRSS0004ZE-A PRSS0004ZE-A RJL5014DPK RJL5014DPK-00-T0 SC-65	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)	Original	RJL5014DPK R07DS0436EJ0200 REJ03G1798-0100) PRSS0004ZE-A	PDF
PRSS0004ZE-A Abstract: RJL5014DPK RJL5014DPK-00-T0 SC-65 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
R2J24020F Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 Text: 2009.07 ルネサス電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体の炭素使用量を減らし地球の温暖化を防ぐことができます。電気は主に発電所で作られ、高電圧のACで送電されること	Original	RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114	PDF
Hdd spindle motor Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts	Original	O-220CFM H5N5004PL H5N5005PL RJL5012DPP O-220FN RJL5013DPP RJL5014DPP RJL5014DPK Hdd spindle motor HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA	PDF